The　change　of　the　resistive　switching　effect　in　an　Au/BiFeO3/SrRuO3　structure　under　repetitive　switching　was　studied.　The　current-voltage　characteristics　indicated　space-charge-limited　(SCL)　conduction.　The　transition　voltage　from　ohmic　to　SCL,　voltage　of　the　trap-filled　limit,　and　resistance　increased　with　switching　cycle　number　in　the　wake-up　stage.　Such　changes　were　attributed　to　the　increase　of　trap　density　caused　by　the　release　of　polarization　domains.　Ohmic　and　SCL　currents　increased　with　switching　cycle　number　after　fatigue,　indicating　that　charge　carrier　density　increased　because　of　oxygen　vacancy　generation.　The　change　of　transition　voltage　from　ohmic　to　SCL　showed　a　consistent　trend.　(C)　2018　The　Japan　Society　of　Applied　Physics