Ferroelectrics　are　widely　used　in　the　manufacture　of　transducers,　actuators,　and　memory　devices,　due　to　their　attractive　electromechanical　properties.　However,　the　reliability　and　failure　of　devices　is　greatly　dependent　on　their　brittleness.　In　view　of　the　fact　that　both　the　polarization　distribution　and　elastic　field　are　at　nanoscale　and　vary　greatly　in　the　vicinity　of　the　crack　tip,　flexoelectricity　is　expected　to　strongly　affect　the　domain　configuration.　In　this　work,　Ginzburg-Landau　(TDGL)　theory　and　the　phase　field　method　(PFM)　are　employed　to　analyze　the　influence　of　flexoelectric　effect　on　the　domain　switching　process　in　the　vicinity　of　the　crack　tip　of　ferroelectric　materials.　The　results　obtained　show　that,　the　domain　configuration　would　become　asymmetric　with　increasing　flexoelectric　coefficients,　and　the　flexoelectric　effect　has　a　larger　influence　on　the　polarization　field　than　on　the　elastic　field　in　the　vicinity　of　the　crack　tip　of　ferroelectric　materials.