Influence of growth pressure on the optical and electrical properties of GaN films - 文章详情页

作者：

Feng, L. (Feng, L..) | Han, J. (Han, J..) | Xing, Y. (Xing, Y..) | Fan, Y. (Fan, Y..)

收录：

Scopus PKU CSCD

摘要：

The　optical　and　electrical　properties　of　unintentionally　doped　GaN　films　grown　at　100　Torr　and　500　Torr　pressure　respectively　by　MOCVD　system　were　investigated.　It　is　proved　that　low　growth　pressure　of　100　Torr　can　effectively　reduce　the　Carbon　impurities　in　the　GaN　films　to　suppress　the　formation　of　deep　acceptors　which　are　the　origin　of　yellow　and　blue　light　peaks　in　the　photoluminescence　measurement,　and　the　GaN　films　fabricated　under　such　conditions　present　better　optical　properties.　Meantime,　GaN　films　grown　at　different　pressure　show　different　electrical　properties.　The　GaN　films　grown　at　500　Torr　usually　have　higher　carrier　concentration　((4.6~6.4)×10　16　cm　-3)　and　higher　carrier　mobility　(446~561　cm　2/(V·s)),　while　the　GaN　films　grown　at　100　Torr　usually　have　lower　carrier　concentration　(1.56~3.99×10　16　cm　-3)　and　lower　carrier　mobility(22.9~202　cm　2/(V·s)).

关键词：

Carrier concentration; Carrier mobility; GaN; Growth pressure; MOCVD; Photoluminescence

作者机构：

[ 1 ] [Feng, L.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Han, J.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Xing, Y.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Fan, Y.]Suzhou Institute of Nano-Tech. and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

通讯作者信息：

[Feng, L.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

电子邮件地址：

lfeng2010@sinano.ac.cn

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至