Heterojunction　and　direct　Z-scheme　nanostructures　are　two　typical　representatives　of　an　efficient　photo　catalyst,　which　is　composed　of　two　semiconductors.　However,　it　is　a　great　challenge　to　construct　each　of　them　on　purpose.　The　photodeposition　technique　can　be　a　potentially　powerful　tool　to　regulate　the　electron　flow　direction　for　constructing　these　nanostructures.　In　this　report,　CdS　nanoparticles　were　deposited　on　the　g-C3N4　nanosheets　by　photodeposition　and　chemical　deposition　methods　for　comparison.　In　the　photodeposition　case,　PL　and　charge　flow　tracking　demonstrate　that　a　type　II　heterojunction　is　constructed　because　CdS　is　selectively　deposited　at　the　electron　transfer　site　of　g-C3N4,　which　leads　to　the　photoexcited　electron　from　g_C3N4　tending　to　transfer　to　CdS　in　the　composites.　In　the　latter,　the　CdS　is　randomly　deposited　onto　the　g-C3N4　nanosheets　through　chemical　deposition.　There　is　no　preferred　site　for　deposition　or　charge　transfer　in　the　composite.　The　results　illustrate　that　the　electron　of　CdS　tends　to　recombine　with　the　hole　from　g-C3N4.　The　direct　Z-scheme　is　predominant　for　the　CdS/g-C3N4　prepared　by　the　chemical　deposition　route.　Furthermore,　the　photocatalytic　performance　and　stability　also　confirm　the　above　results.　On　the　of　these,　we　can　deduce　that　the　photodeposition　method　can　be　used　to　regulating　the　electron　transfer　route.　We　expect　this　report　to　shed　light　on　the　rational　design　of　heterojunction　or　direct　Z-scheme　type　composites.