The　white　light　emitting　diode　was　made　by　GaN/GaAs　wafer　bonded　in　our　experiment.　With　this　method,　we　obtained　equal　energy　white　light　by　choosing　the　primary　colors　with　matched　wavelength　and　light　power　through　color　matching　calculation.　The　forward　voltage　of　the　diodes　at　the　typical　driving　current　of　20　mA　was　5.3　V.　This　data　is　lower　than　the　voltage　of　the　ones　using　the　tunneling　junction.　This　method　has　great　potential　in　the　solid-state　lighting.