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作者:

Zuo, Yong (Zuo, Yong.) | Bieler, Thomas R. (Bieler, Thomas R..) | Zhou, Quan (Zhou, Quan.) | Ma, Limin (Ma, Limin.) | Guo, Fu (Guo, Fu.) (学者:郭福)

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EI Scopus SCIE

摘要:

The anisotropy of Sn crystal structures greatly affects the electromigration (EM) and thermomechanical fatigue (TMF) of solder joints. The size of solder joint shrinkage in electronic systems further makes EM and TMF an inseparably coupled issue. To obtain a better understanding of failure under combined moderately high (2000 A/cm(2)) current density and 10-150A degrees C/1 h thermal cycling, analysis of separate, sequential, and concurrent EM and thermal cycling (TC) was imposed on single shear lap joints, and the microstructure and crystal orientations were incrementally characterized using electron backscatter diffraction (EBSD) mapping. First, it was determined that EM did not significantly change the crystal orientation, but the formation of Cu6Sn5 depended on the crystal orientation, and this degraded subsequent TMF behavior. Secondly, TC causes changes in crystal orientation. Concurrent EM and TC led to significant changes in crystal orientation by discontinuous recrystallization, which is facilitated by Cu6Sn5 particle formation. The newly formed Cu6Sn5 often showed its c-axis close to the direction of electron flow.

关键词:

electromigration low-silver solder orientation Thermomechanical fatigue

作者机构:

  • [ 1 ] [Zuo, Yong]Beijing Univ Technol, Coll Mat Sci & Engn, 100 Ping Le Yuan, Beijing 100024, Peoples R China
  • [ 2 ] [Ma, Limin]Beijing Univ Technol, Coll Mat Sci & Engn, 100 Ping Le Yuan, Beijing 100024, Peoples R China
  • [ 3 ] [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, 100 Ping Le Yuan, Beijing 100024, Peoples R China
  • [ 4 ] [Zuo, Yong]Michigan State Univ, Dept Chem Engn & Mat Sci, Engn Bldg, Lansing, MI 48824 USA
  • [ 5 ] [Bieler, Thomas R.]Michigan State Univ, Dept Chem Engn & Mat Sci, Engn Bldg, Lansing, MI 48824 USA
  • [ 6 ] [Zhou, Quan]Michigan State Univ, Dept Chem Engn & Mat Sci, Engn Bldg, Lansing, MI 48824 USA

通讯作者信息:

  • [Zhou, Quan]Michigan State Univ, Dept Chem Engn & Mat Sci, Engn Bldg, Lansing, MI 48824 USA

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来源 :

JOURNAL OF ELECTRONIC MATERIALS

ISSN: 0361-5235

年份: 2018

期: 3

卷: 47

页码: 1881-1895

2 . 1 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:131

JCR分区:3

被引次数:

WoS核心集被引频次: 12

SCOPUS被引频次: 16

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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