This　paper　propose　a　novel　reliability　analysis　approach　for　electrostatic　discharge　(ESD)　stress　on　4H-SiC　junction　barrier　Schottky　(JBS)　diodes　using　the　technology　of　Micro-Raman　spectroscopy.　Several　conventional　analysis　are　firstly　used　to　determine　the　failure　site　after　the　JBS　diodes　are　destructed　by　ESD　stress,　including　optical　microscope　(OM),　Photoemission　microscopy　(PEM)　and　scanning　electron　microscopy　(SEM).　Then,　the　Micro-Raman　spectroscopy　is　applied　to　analyze　element　identification　and　crystal　structure　of　micro　failure　site.　The　analysis　reveals　that　high　electric　field　and　high　temperature　concentrate　in　the　high-voltage　termination,　resulting　in　diode　burnout　and　changing　the　physical　microstructure　of　base　SiC.　Furthermore,　in　the　micro　failure　site,　4H-SiC　with　different　Raman　spectrum　from　base　4H-SiC　are　clearly　found,　and　carbon　escapes　out　from　base　SiC　by　combustion,　leaving　a　mixture　of　amorphous　silicon　and　polysilicon,　which　is　decomposed　from　the　base　SiC　on　the　failure　surface.