Optical　and　electrical　properties　of　Ga-doped　Zinc　Oxide　(GZO)　has　been　studied　in　the　present　article.　Density　functional　theory　and　Hubbard　U　(DFT　+　U-d　+　U-p)　based　first　principle　calculations　were　employed　for　theoretical　estimation　whereas　Laser　ablation　method　has　been　used　to　fabricate　GZO　thin　films　on　p-GaN,　Al2O3　and　p-Si　substrate　for　experimental　analysis.　Single　crystal　growth　of　GZO　thin　films　with　(002)　preferred　crystallographic　orientation　has　been　shown　in　X-ray　diffraction　graphs.　The　elemental　composition　of　all　samples　has　been　studied　via　EDS　(energy　dispersive　X-ray)　spectroscopy,　no　other　unwanted　impurity　related　peaks　were　found　which　indicates　the　impurity-free　growth　of　GZO.　Noodle,　seed　and　granular-like　structures　of　GZO/GaN,　GZO/Al2O3,　and　GZO/Si　have　been　revealed　via　Field-emission　scanning　electron　microscopy　micrographs　respectively.　The　morphological　analysis　suggested　GaN　substrate　as　the　best　candidate　for　uniform　and　better　quality　GZO　thin　films.　Highest　carrier　mobility　(53　cm(2)/V　s)　with　higher　carrier　concentration　(＞10(20)　cm(-3))　has　been　found　with　low　(1800)　laser　shots.　Fivefold　photoluminescence　enhancement　in　the　noodle-like　structure　of　GZO/GaN　with　compared　to　GZO/Al2O3　and　GZO/Si　has　been　recorded.　As　the　noodle-like　structure　supposed　to　be　a　more　favorable　structure　for　enhanced　optical　properties　of　GZO　which　points　toward　shape-driven　optical　properties.　Theoretical　(3.539　eV)　and　experimental　(3.43,　3.6　eV)　values　of　band-gap　were　found　quite　comparable.　Moreover,　lowest　resistivity　(3.5　x　10(-4)　Omega　cm)　with　80%　transmittance　is　evident　for　GZO　as　a　successful　alternate　of　ITO.