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作者:

Pan, Guanzhong (Pan, Guanzhong.) | Xie, Yiyang (Xie, Yiyang.) | Xu, Chen (Xu, Chen.) (学者:徐晨) | Xun, Meng (Xun, Meng.) | Dong, Yibo (Dong, Yibo.) | Deng, Jun (Deng, Jun.) | Sun, Jie (Sun, Jie.)

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EI Scopus SCIE

摘要:

In-phase coherently coupled proton-implantdefined vertical cavity surfaceemitting laser (VCSEL) arrays face difficulties in current spreading, resulting in small array scale, low output power, and broad beamwidth. Although patterned metal grids can improve the current spreading, the undesirable out-of-phasemode tends to be dominant in the array. In this letter, by means of engineering the implantation and array parameters, in-phase mode is obtained in large-scale proton-implant-defined arrays with metal grids. Experimental results showthat these arrays are operating in in-phasemode with a nominal interelement spacing of 8 mu m and an implantation depth of 2.22 mu m. By using these parameters, a 5x5 in-phase array with a narrow beamwidth (far-field full width at half maximum) of 1.61 degrees is realized. Besides, a 10x10 in-phase array with a beamwidth of 1.89 degrees and an output power of 10.25 mW for the in-phase mode is achieved. The calculation of far fields is performed to confirm the in-phase operation measured results. Such a simple and low-cost technology provides a promising method for preparing large-scale in-phase coherently coupled VCSEL arrays.

关键词:

in-phase narrow beamwidth proton implantation VCSEL array

作者机构:

  • [ 1 ] [Pan, Guanzhong]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Xie, Yiyang]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Xu, Chen]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Xun, Meng]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Dong, Yibo]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Deng, Jun]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Sun, Jie]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 8 ] [Sun, Jie]Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

通讯作者信息:

  • 徐晨 孙捷

    [Xu, Chen]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China;;[Sun, Jie]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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来源 :

IEEE ELECTRON DEVICE LETTERS

ISSN: 0741-3106

年份: 2018

期: 3

卷: 39

页码: 390-393

4 . 9 0 0

JCR@2022

ESI学科: ENGINEERING;

ESI高被引阀值:76

JCR分区:1

被引次数:

WoS核心集被引频次: 11

SCOPUS被引频次: 13

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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