Effect of interface spin-flip scattering on spin injection in a finite ferro magnetic/nonmagnetic-semi conductor/ferromagnetic junction - 文章详情页

作者：

Mi, Y.-L. (Mi, Y.-L..) | Zhang, M. (Zhang, M..) | Yan, H. (Yan, H..)

收录：

Scopus PKU CSCD

摘要：

Considering　the　effect　of　the　interface　spin-flip　scattering,　the　spin-injection　across　ferro-magnet/nonmagnetic-semiconductor/ferro　magnet　heterostuctures　with　finite　size　was　explored　theoretically.　Due　to　the　fact　that　interfacial　spin-flip　scattering　leads　to　spin-memory　losses　at　the　interfaces,　the　spin-up　component　of　spin-polarized　current　could　not　be　continuous　across　the　interface.　It　is　found　that　when　the　spin　injection　efficiency　varies　from　zero　to　unity,　the　tunneling　magnetoresistance　of　the　ferromagnet/nonmagnetic-semiconductor/ferromagnet　junction　presents　two　orders　of　changes　in　magnitude,　which　reflects　the　fact　that　the　spin-flip　scattering　at　the　interface　directly　affects　the　tunneling　magnetoresistance　of　ferrom　agnet/nonmagnetic-semiconductor/ferromagnet.

关键词：

Finite width; Spin injection efficiency; Spin-flip scattering

作者机构：

[ 1 ] [Mi, Y.-L.]College of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Mi, Y.-L.]College of Science, North China University of Technology, Beijing 100041, China
[ 3 ] [Zhang, M.]College of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Yan, H.]College of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China

通讯作者信息：

[Mi, Y.-L.]College of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China

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