In　this　work,　silver　(Ag)　precursors　with　different　thicknesses　were　sputtered　on　the　surfaces　of　Culn　alloys,　and　(AgCu)InSe2　(ACIS)　films　were　formed　after　selenization　at　550　degrees　C　under　nitrogen　condition　using　a　rapid　thermal　process　furnace.　The　structure　and　electrical　properties　of　the　ACIS　films　were　investigated.　The　result　showed　that　the　distribution　of　Ag+　ion　was　more　uniform　with　increasing　the　thickness　of　Ag　precursor,　and　the　surface　of　the　thin-film　became　more　homogeneous　and　denser.　When　Ag/Cu　ratio　＞=　0.249,　the　small　grain　particles　disappeared.　The　band　gap　can　be　rationally　controlled　by　adjusting　Ag　content.　When　(Ag　+　Cu)/In　ratio　＞=　1.15,　the　surface　of　the　ACIS　thin-film　mainly　exhibited　n-type　semiconductor.　Through　the　photoelectrochemistry　measurement,　it　was　observed　that　the　incorporation　of　Ag+　ions　could　improve　photocurrent　by　adjusting　the　band　gap.　With　the　Ag　precursor　thickness　increased,　the　dark　current　decreased　at　the　more　negative　potential.　(C)　2017　Elsevier　Ltd.　All　rights　reserved.