Preparation and electrical properties of Ga doped ZnO ceramics by spark plasma sintering - 文章详情页

作者：

Chen, L. (Chen, L..) | Wang, Y. (Wang, Y..) | Mei, X.-P. (Mei, X.-P..) | Hu, S.-P. (Hu, S.-P..) | Jiang, Y.-J. (Jiang, Y.-J..) (学者：蒋毅坚)

收录：

Scopus PKU CSCD

摘要：

Bulk　gallium-doped　zinc　oxide　ceramics　(0.075　wt%GZO)　which　has　a　near　full　density　were　fabricated　by　spark　plasma　sintering　process.　The　sintering　temperature　of　the　specimens　from　950℃　to　1200℃　and　sintering　time　from　3　min　to　21　min.　The　phase,　fractured　morphology,　electrical　properties　and　density　of　samples　were　investigated.　The　results　indicate　that　the　crystal　structure　of　zinc　oxide　doesn＇t　change　with　the　change　of　sintering　conditions,　but　it　impacts　on　the　density,　grain　growth　and　resistivity　of　GZO　ceramics.　All　experiments　results　reveal　that　sintering　temperature　of　1100℃　and　sintering　time　of　9　min　are　the　optimal　sintering　conditions　of　GZO　ceramics.　©　2016,　Chinese　Ceramic　Society.　All　right　reserved.

关键词：

Gallium doped ZnO ceramic; Sintering temperature; Sintering time; Spark plasma sintering

作者机构：

[ 1 ] [Chen, L.]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Wang, Y.]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Mei, X.-P.]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Hu, S.-P.]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Jiang, Y.-J.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China

通讯作者信息：

[Wang, Y.]College of Applied Sciences, Beijing University of TechnologyChina

电子邮件地址：

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至