Creep behavior of electroplated Cu for through-silicon via filling - 文章详情页

作者：

Wu, W. (Wu, W..) | Qin, F. (Qin, F..) (学者：秦飞) | An, T. (An, T..) | Chen, P. (Chen, P..) | Yu, H. (Yu, H..)

收录：

Scopus PKU CSCD

摘要：

As　through-silicon　via　(TSV)　is　the　core　structural　element　of　3D　integration　or　packaging,　and　the　performance　of　TSV-Cu　is　critical　for　TSV　reliability.　This　paper　studied　the　creep　behavior　of　TSV-Cu　comprehensively.　TSV-Cu　sample　was　prepared　by　regular　TSV　process,　and　then　nanoindention　was　used　to　determine　the　creep　behavior　of　TSV-Cu　at　room　temperature.　A　method　of　combining　the　constant　loading　rate/load　test　and　the　constant　load　test　was　introduced　for　the　creep　behavior　testing.　Therefore,　the　creep　behaviors　of　TSV-Cu　under　various　loading　conditions　were　analyzed.　The　creep　strain　rate　sensitivity　m　can　also　be　obtained　by　processing　the　data　from　constant　loading　stage.　Results　show　that　m　is　independent　with　indentation　strain　rates　and　maximum　indentation　depths.　©　2016,　Beijing　University　of　Technology.　All　right　reserved.

关键词：

Creep rate sensitivity; Nanoindentation; Through-silicon-via (TSV); TSV-Cu

作者机构：

[ 1 ] [Wu, W.]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Qin, F.]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [An, T.]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Chen, P.]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Yu, H.]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, 100124, China

通讯作者信息：

电子邮件地址：

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至