Effects of lateral structure parameters on small signal model parameters of SiGe HBTs - 文章详情页

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The　effects　of　lateral　structure　parameters　including　emitter　width,　length　and　stripe　number　on　small　signal　model　parameters　of　SiGe　HBTs　were　analyzed.　Parameters　Y　for　different　sizes　of　Jazz　0.35　μm　BiCMOS　SiGe　HBT　were　obtained,　and　the　parameters　of　small　signal　model　were　correspondingly　calculated.　Results　show　that　as　the　emitter　width,　length　and　stripe　number　increase,　the　resistance　in　the　model　decreases　while　the　capacitance　and　transconductance　increase.　Moreover,　the　effect　of　SiGe　HBTs　lateral　structure　parameters　on　performance　of　the　synthesized　active　inductor　was　analyzed.　The　results　have　a　reference　meaning　for　the　selection　of　lateral　structure　parameters　of　active　device　used　in　synthesis　of　a　active　inductor.　©　2016,　Beijing　University　of　Technology.　All　right　reserved.

关键词：

Geometrical parameters; Parameters Y; SiGe hetero-junction bipolar transistor (SiGe HBT); Small signal model parameters

作者机构：

[ 1 ] [Zhao, Y.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Zhang, W.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Xie, H.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Huang, X.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Zhang, L.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 6 ] [Jin, Z.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 7 ] [Fu, Q.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China

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