Displaying　a　full　or　tuneable　emission　spectrum　with　highly　efficient　is　significant　for　luminescent　materials　used　in　solid-state　lighting.　Silicon　carbide　(SiC)　has　potential　for　use　in　photoelectric　devices　that　operate　under　extreme　conditions.　In　this　paper,　we　present　a　method　to　selectively　modify　the　photoluminescence　(PL)　properties　of　SiC　by　ultrafast　laser　direct　writing.　Based　on　this　method,　visible　white　PL　could　be　observed　by　the　naked　eye　at　room　temperature　under　ultraviolet　excitation.　By　increasing　the　laser　power　intensity　from　40　to　80　MW/cm2,　the　PL　of　the　irradiated　samples　increased　and　pure　white　sunlight-like　emission　with　controlled　colour　temperature　was　realised.　The　optimised　laser　power　intensity　of　65　MW/cm2　achieved　a　desirable　colour　temperature　similar　to　that　of　sunlight　(x　=　0.33,　y　=　0.33　and　colour　temperature　of　5500　K)　and　suppressed　blue　emission.　By　direct　laser　irradiation　along　designed　scanning　path,　a　large-scale　and　arbitrary　pattern　white　emission　was　fabricated.　The　origin　of　the　white　luminescence　was　a　mixture　of　multiple　luminescent　transitions　of　oxygen-related　centres　that　turned　the　Si-C　system　into　silicon　oxycarbide.　This　work　sheds　light　on　new　luminescent　materials　and　a　preparation　technique　for　next-generation　lighting　devices.