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Author:

Jia, Y. (Jia, Y..) | Su, H. (Su, H..) | Jin, R. (Jin, R..) | Hu, D. (Hu, D..) | Wu, Y. (Wu, Y..)

Indexed by:

Scopus CSCD

Abstract:

The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. © 2016 Chinese Institute of Electronics.

Keyword:

Heavy ion Au beam; Linear doping buffer layer; Quasi-static avalanche; Single event burnout (SEB)

Author Community:

  • [ 1 ] [Jia, Y.]Power Semiconductor and Power Integrated Circuit Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 2 ] [Su, H.]Power Semiconductor and Power Integrated Circuit Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 3 ] [Jin, R.]New Electrical Materials and Microelectronics Institute, State Grid Smart Electrical Engineering, Beijing, 100192, China
  • [ 4 ] [Hu, D.]Power Semiconductor and Power Integrated Circuit Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 5 ] [Wu, Y.]Power Semiconductor and Power Integrated Circuit Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China

Reprint Author's Address:

  • [Su, H.]Power Semiconductor and Power Integrated Circuit Laboratory, College of Electronic Information and Control Engineering, Beijing University of TechnologyChina

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Source :

Journal of Semiconductors

ISSN: 1674-4926

Year: 2016

Issue: 2

Volume: 37

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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