Effect of multilayer Ti/Al electrode structure on AlGaN/GaN HEMT ohmic contact characteristics - 文章详情页

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摘要：

The　effect　of　multilayer　Ti/Al　structure　electrode　on　AlGaN/GaN　HEMT　Ohmic　contact　characteristics　and　the　surface　morphology　were　investigated.　The　specific　contact　resistance　of　all　kinds　of　electrode　structure　was　measured　by　transmission　line　model　(TLM).　The　scanning　electron　microscope　(SEM)　was　used　to　measure　the　electrode　surface　morphology.　The　experiment　results　show　that　the　special　contact　resistance　tend　to　decrease　and　the　surface　morphology　tend　to　be　smooth　with　the　increasing　of　the　number　of　Ti/Al　layers　in　the　same　annealing　conditions.　The　reducing　of　the　thickness　of　Ti/Al　layer　can　increase　the　specific　contact　resistance　because　of　Au　in-diffusion,　but　can　slightly　improve　the　surface　morphology.　High　Ti　ratio　can　reduce　the　formation　of　TiN,　and　lead　to　the　increasing　of　specific　contact　resistance,　but　can　greatly　improve　the　surface　morphology.　©　2016,　Science　Press.　All　right　reserved.

关键词：

Annealing; High electron mobility transistor; Ohmic contact; Specific contact resistance

作者机构：

[ 1 ] [Yu, N.]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Wang, H.-H.]State Key Laboratory of Electronic Thin Films and Integrated Devices, Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan, 528402, China
[ 3 ] [Liu, F.-F.]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Du, Z.-J.]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Wang, Y.-H.]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing, 100124, China
[ 6 ] [Song, H.-H.]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing, 100124, China
[ 7 ] [Zhu, Y.-X.]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing, 100124, China
[ 8 ] [Sun, J.]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing, 100124, China

通讯作者信息：

[Zhu, Y.-X.]Beijing Optoelectronic Technology Laboratory, Beijing University of TechnologyChina

电子邮件地址：

zhuyx@bjut.edu.cn

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