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Author:

Zai, Huachao (Zai, Huachao.) | Zhu, Cheng (Zhu, Cheng.) | Xie, Haipeng (Xie, Haipeng.) | Zhao, Yizhou (Zhao, Yizhou.) | Shi, Congbo (Shi, Congbo.) | Chen, Zhenxin (Chen, Zhenxin.) | Ke, Xiaoxing (Ke, Xiaoxing.) | Sui, Manling (Sui, Manling.) (Scholars:隋曼龄) | Chen, Changfeng (Chen, Changfeng.) | Hu, Jinsong (Hu, Jinsong.) | Zhang, Qjngshan (Zhang, Qjngshan.) | Gao, Yongli (Gao, Yongli.) | Zhou, Huanping (Zhou, Huanping.) | Li, Yujing (Li, Yujing.) | Chen, Qi (Chen, Qi.)

Indexed by:

Scopus SCIE

Abstract:

Organic inorganic hybrid perovskite materials have had remarkable success in photovoltaics due to their superior optoelectronic properties and compositional abundance. Most advances focus on the improvement of the heterojunction, in which nonperovskite materials are employed at the pertaining interfaces. Herein we demonstrate the modification of perovskite absorber by incorporation of CsPbBr3 nanocrystals, which is congeneric to the absorber in terms of crystal structure and stoichiometry. It led to significant enhancement in photovoltaic performance in the corresponding devices, which was mainly attributed to the improved carrier dynamics over the resultant heterojunction. Therefore, a different strategy is suggested for further improvement of the perovskite heterojunction by using congeneric materials.

Keyword:

Author Community:

  • [ 1 ] [Zai, Huachao]Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 2 ] [Zhu, Cheng]Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 3 ] [Zhao, Yizhou]Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 4 ] [Shi, Congbo]Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 5 ] [Zhang, Qjngshan]Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 6 ] [Li, Yujing]Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 7 ] [Chen, Qi]Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
  • [ 8 ] [Zai, Huachao]China Univ Petr, Dept Mat Sci & Engn, Coll Sci, Beijing 102249, Peoples R China
  • [ 9 ] [Zhao, Yizhou]China Univ Petr, Dept Mat Sci & Engn, Coll Sci, Beijing 102249, Peoples R China
  • [ 10 ] [Chen, Changfeng]China Univ Petr, Dept Mat Sci & Engn, Coll Sci, Beijing 102249, Peoples R China
  • [ 11 ] [Xie, Haipeng]Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China
  • [ 12 ] [Chen, Zhenxin]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 13 ] [Ke, Xiaoxing]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 14 ] [Sui, Manling]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 15 ] [Hu, Jinsong]Chinese Acad Sci, Inst Chem, Key Lab Mol Nanostruct & Nanotechnol, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
  • [ 16 ] [Gao, Yongli]Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
  • [ 17 ] [Zhou, Huanping]Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China

Reprint Author's Address:

  • [Li, Yujing]Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China;;[Chen, Qi]Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China

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Source :

ACS ENERGY LETTERS

ISSN: 2380-8195

Year: 2018

Issue: 1

Volume: 3

Page: 30-38

2 2 . 0 0 0

JCR@2022

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 118

SCOPUS Cited Count: 118

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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