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作者:

Hassan, Ali (Hassan, Ali.) | Irfan, Muhammad (Irfan, Muhammad.) | Jiang, Yijian (Jiang, Yijian.) (学者:蒋毅坚)

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EI Scopus SCIE

摘要:

The structural, morphological, and optical characteristics of GZO ultra-thin films were investigated using XRD (X-ray diffraction), FE-SEM (field emission electron microscopy), in situ EDS (Energy Dispersive X-ray) spectroscopy, UV-VIS-IR spectroscopy and photoluminescence spectroscopy (PL) respectively. Morphological analysis reveals the noodle, seed and particle like structure of GZO for GaN, sapphire and Si substrates respectively with average grain size ranging from 5 to 20 nm. An effective mass model (EM-Model) for particle in a cylindrical wave function of e-h pair was correlated with experimental results. The reduction in FWHM value (from 31 nm to 13 nm) of NBE (near-band-edge) emission peak and enhanced NBE intensity have been achieved with small grain size. Blue shift in optical band gap is explained in term of grain radius by EM-model. Improved optical and structural properties were found in relation with quantum confinement effect. The current study states that grain size plays vital role in order to tailor optical properties of GZO thin films. (C) 2017 Elsevier B.V. All rights reserved.

关键词:

Epitaxial growth Laser Processing Luminescence Semiconductor Thin films

作者机构:

  • [ 1 ] [Hassan, Ali]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Jiang, Yijian]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Irfan, Muhammad]Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

通讯作者信息:

  • [Hassan, Ali]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China

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来源 :

MATERIALS LETTERS

ISSN: 0167-577X

年份: 2018

卷: 210

页码: 358-362

3 . 0 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:131

被引次数:

WoS核心集被引频次: 11

SCOPUS被引频次: 11

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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