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Abstract:
InGaN/GaN MQWs structures were grown by MOCVD. The effects of the growth interruption time on the optical and structural properties of InGaN/GaN MQWs were investigated. The experimental results show that the growth interruption can improve the interface quality, increase the intensity of photoluminescence (PL) and electroluminescence (EL); but if the interruption time was too long, the well thickness and the average In composition of MQWs decreased, and the EL intensity also decreased due to poor interface quality and impurities derived from growth interruption. © 2007 Tianjin University of Technology.
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Optoelectronics Letters
ISSN: 1673-1905
Year: 2007
Issue: 1
Volume: 3
Page: 1-3
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count: 4
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 1