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Author:

Niu, N.-H. (Niu, N.-H..) | Wang, H.-B. (Wang, H.-B..) | Liu, J.-P. (Liu, J.-P..) (Scholars:刘加平) | Liu, N.-X. (Liu, N.-X..) | Xing, Y.-H. (Xing, Y.-H..) | Han, J. (Han, J..) | Deng, J. (Deng, J..) | Shen, G.-D. (Shen, G.-D..)

Indexed by:

Scopus

Abstract:

InGaN/GaN MQWs structures were grown by MOCVD. The effects of the growth interruption time on the optical and structural properties of InGaN/GaN MQWs were investigated. The experimental results show that the growth interruption can improve the interface quality, increase the intensity of photoluminescence (PL) and electroluminescence (EL); but if the interruption time was too long, the well thickness and the average In composition of MQWs decreased, and the EL intensity also decreased due to poor interface quality and impurities derived from growth interruption. © 2007 Tianjin University of Technology.

Keyword:

Author Community:

  • [ 1 ] [Niu, N.-H.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Wang, H.-B.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Liu, J.-P.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Liu, N.-X.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Xing, Y.-H.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 6 ] [Han, J.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 7 ] [Deng, J.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 8 ] [Shen, G.-D.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

Reprint Author's Address:

  • [Niu, N.-H.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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Source :

Optoelectronics Letters

ISSN: 1673-1905

Year: 2007

Issue: 1

Volume: 3

Page: 1-3

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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