Effects of growth interruption on the properties of InGaN/GaN MQWs grown by MOCVD - 文章详情页

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InGaN/GaN　MQWs　structures　were　grown　by　MOCVD.　The　effects　of　the　growth　interruption　time　on　the　optical　and　structural　properties　of　InGaN/GaN　MQWs　were　investigated.　The　experimental　results　show　that　the　growth　interruption　can　improve　the　interface　quality,　increase　the　intensity　of　photoluminescence　(PL)　and　electroluminescence　(EL);　but　if　the　interruption　time　was　too　long,　the　well　thickness　and　the　average　In　composition　of　MQWs　decreased,　and　the　EL　intensity　also　decreased　due　to　poor　interface　quality　and　impurities　derived　from　growth　interruption.　©　2007　Tianjin　University　of　Technology.

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作者机构：

[ 1 ] [Niu, N.-H.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Wang, H.-B.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Liu, J.-P.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Liu, N.-X.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Xing, Y.-H.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Han, J.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Deng, J.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 8 ] [Shen, G.-D.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

通讯作者信息：

[Niu, N.-H.]Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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pitt@emails.bjut.edu.cn

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