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作者:

Wang, Shaoliang (Wang, Shaoliang.) | Gou, Xianfang (Gou, Xianfang.) | Zhou, Su (Zhou, Su.) | Huang, Junlin (Huang, Junlin.) | Huang, Qingsong (Huang, Qingsong.) | Qiu, Jialiang (Qiu, Jialiang.) | Xu, Zheng (Xu, Zheng.) | Shen, Honglie (Shen, Honglie.)

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摘要:

We report industrial fabrication of different kinds of nanostructured multicrystalline silicon solar cells via normal acid texturing, reactive ion etching (RIE), and metal-assisted chemical etching (MACE) processes on diamond wire sawing wafer. The effect of different surface structure on reflectivity, lifetime, and electrical performance was systematically studied in this paper. The difference between industrial acid, RIE, and MACE textured multicrystalline silicon solar cells to our knowledge has not been investigated previously. The resulting efficiency indicates that low reflectivity surface structure with the size of 0.2-0.8 mu m via RIE and MACE process do not always lead to low lifetime compared with acid texturing process. Both RIE and MACE process is promising candidate for high efficiency processes for future industrial diamond wire sawing multicrystalline silicon solar cells.

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作者机构:

  • [ 1 ] [Wang, Shaoliang]Beijing Jiaotong Univ, Inst Optoelect Technol, Beijing 100044, Peoples R China
  • [ 2 ] [Xu, Zheng]Beijing Jiaotong Univ, Inst Optoelect Technol, Beijing 100044, Peoples R China
  • [ 3 ] [Gou, Xianfang]CECEP Solar Energy Technol Zhenjiang Co Ltd, Zhenjiang 212132, Peoples R China
  • [ 4 ] [Zhou, Su]CECEP Solar Energy Technol Zhenjiang Co Ltd, Zhenjiang 212132, Peoples R China
  • [ 5 ] [Huang, Junlin]CECEP Solar Energy Technol Zhenjiang Co Ltd, Zhenjiang 212132, Peoples R China
  • [ 6 ] [Huang, Qingsong]CECEP Solar Energy Technol Zhenjiang Co Ltd, Zhenjiang 212132, Peoples R China
  • [ 7 ] [Qiu, Jialiang]CECEP Solar Energy Technol Zhenjiang Co Ltd, Zhenjiang 212132, Peoples R China
  • [ 8 ] [Gou, Xianfang]Beijing Univ Technol, Beijing 100124, Peoples R China
  • [ 9 ] [Zhou, Su]Nanjing Univ Aeronaut & Astronaut, Nanjing 211106, Jiangsu, Peoples R China
  • [ 10 ] [Huang, Junlin]Nanjing Univ Aeronaut & Astronaut, Nanjing 211106, Jiangsu, Peoples R China
  • [ 11 ] [Shen, Honglie]Nanjing Univ Aeronaut & Astronaut, Nanjing 211106, Jiangsu, Peoples R China

通讯作者信息:

  • [Xu, Zheng]Beijing Jiaotong Univ, Inst Optoelect Technol, Beijing 100044, Peoples R China;;[Zhou, Su]CECEP Solar Energy Technol Zhenjiang Co Ltd, Zhenjiang 212132, Peoples R China;;[Zhou, Su]Nanjing Univ Aeronaut & Astronaut, Nanjing 211106, Jiangsu, Peoples R China

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来源 :

INTERNATIONAL JOURNAL OF PHOTOENERGY

ISSN: 1110-662X

年份: 2018

卷: 2018

3 . 2 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:145

JCR分区:3

被引次数:

WoS核心集被引频次: 5

SCOPUS被引频次: 7

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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