(Ga2O3)(0.1)(Co)(0.5)(ZnSe)(0.4)　thin　films　were　fabricated　via　PLD　at　different　pressures　and　substrate　temperatures.　The　influence　of　different　preparation　conditions　on　the　thin　films　was　deeply　explored　through　investigating　the　structural,　optical　and　electromagnetic　properties,　and　surface　morphologies.　The　thicknesses　of　the　thin　films　were　greatly　affected　by　the　preparation　conditions.　The　poor　light　transmittance　of　the　thin　films　under　conditions　of　4　Pa　and　600　degrees　C　was　revealed　through　refractive　index　measurements.　The　stable　amorphous　structure　was　confirmed　via　XRD.　The　optimum　preparation　conditions,　room　temperature,　800　degrees　C　and　10　Pa,　were　reflected　in　the　transmission　spectra.　Greater　energy　transfer　between　each　of　the　energy　levels　and　more　activity　under　the　temperature　conditions　used　were　indicated　through　PL　spectra.　The　lower　resistivity　and　higher　carrier　concentration　in　the　quartz　substrate　were　shown　in　the　results　of　Hall　effect　measurements.　The　significant　impact　of　high　temperature　preparation　conditions　on　the　thin　films　was　visualised　using　AFM.　All　of　the　results　indicated　that　the　properties　of　the　thin　films　are　significantly　influenced　by　the　preparation　conditions.　Furthermore,　a　semiconductor　chalcogenide　material　with　excellent　optical　and　electromagnetic　properties　was　proposed　in　this　investigation.