Background:　Potential　induced　degradation　(PID)　has　recently　been　identified　as　one　of　the　most　important　degradation　mechanisms　for　silicon　solar　cells.　It　is　widely　considered　that　PID　is　closely　related　with　the　manufacture　and　application　period　of　solar　modules.　Methods:　In　this　study,　the　effects　of　diffusion　sheet　resistance　on　PID　were　verified　and　explained　by　testing　the　emitter　doping　profile,　the　minority　carrier　lifetime,　the　emitter　saturation　current,　the　electrical　performance　of　different　cells,　and　the　PID　process.　Results:　With　increasing　sheet　resistance　of　cells,　the　depth　and　saturation　current　density　of　the　emitter　both　decreased,　and　the　cell　efficiency　increased,　whereas　the　PID　phenomenon　became　serious.　Conclusions:　It　was　found　that　higher　sheet　resistance　or　thinner　P-N　junction　could　lead　to　higher　PID　sensitivity.　Therefore,　more　attention　should　be　paid　to　PID　phenomenon　as　the　photovoltaic　industry　develops　in　the　direction　of　high　sheet　resistance.