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作者:

Xiaowei, C. (Xiaowei, C..) | Pourbakhsh, S.A. (Pourbakhsh, S.A..) | Ligang, H. (Ligang, H..) | Na, G. (Na, G..) | Jinhui, W. (Jinhui, W..)

收录:

Scopus

摘要:

In Three-dimensional (3D) Integrated Circuit (IC), dummy TSVs are often required for thermal and thinning concerns. In this paper, we propose to use those 'timing wasteful' dummy TSVs for timing optimization in on-chip memory, that is to replace bit line delay cells with dummy TSVs. The delay time is measured with different TSV sizes, TSV arrays, and technology nodes. Three memories are employed to verify the feasibility and reliability of the proposed technology. © 2016 IEEE.

关键词:

3D IC; bit line; delay cell; TSV

作者机构:

  • [ 1 ] [Xiaowei, C.]Department of Electrical and Computer Engineering, North Dakota State University, Fargo, ND 58102, United States
  • [ 2 ] [Pourbakhsh, S.A.]Department of Electrical and Computer Engineering, North Dakota State University, Fargo, ND 58102, United States
  • [ 3 ] [Ligang, H.]Department of Electrical and Computer Engineering, North Dakota State University, Fargo, ND 58102, United States
  • [ 4 ] [Na, G.]VLSI and System Lab, Beijing University of Technology, Beijing, 100124, China
  • [ 5 ] [Jinhui, W.]Department of Electrical and Computer Engineering, North Dakota State University, Fargo, ND 58102, United States

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来源 :

IEEE International Conference on Electro Information Technology

ISSN: 2154-0357

年份: 2016

卷: 2016-August

页码: 580-585

语种: 英文

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 2

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 2

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