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作者:

Wang, Lihua (Wang, Lihua.) (学者:王立华) | Guan, Pengfei (Guan, Pengfei.) | Teng, Jiao (Teng, Jiao.) | Liu, Pan (Liu, Pan.) | Chen, Dengke (Chen, Dengke.) | Xie, Weiyu (Xie, Weiyu.) | Kong, Deli (Kong, Deli.) | Zhang, Shengbai (Zhang, Shengbai.) | Zhu, Ting (Zhu, Ting.) | Zhang, Ze (Zhang, Ze.) | Ma, Evan (Ma, Evan.) | Chen, Mingwei (Chen, Mingwei.) | Han, Xiaodong (Han, Xiaodong.) (学者:韩晓东)

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摘要:

Twin nucleation in a face-centered cubic crystal is believed to be accomplished through the formation of twinning partial dislocations on consecutive atomic planes. Twinning should thus be highly unfavorable in face-centered cubic metals with high twin-fault energy barriers, such as Al, Ni, and Pt, but instead is often observed. Here, we report an in situ atomic-scale observation of twin nucleation in nanocrystalline Pt. Unlike the classical twinning route, deformation twinning initiated through the formation of two stacking faults separated by a single atomic layer, and proceeded with the emission of a partial dislocation in between these two stacking faults. Through this route, a three-layer twin was nucleated without a mandatory layer-by-layer twinning process. This route is facilitated by grain boundaries, abundant in nanocrystalline metals, that promote the nucleation of separated but closely spaced partial dislocations, thus enabling an effective bypassing of the high twin-fault energy barrier.

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作者机构:

  • [ 1 ] [Wang, Lihua]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 2 ] [Kong, Deli]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 3 ] [Zhang, Ze]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 4 ] [Han, Xiaodong]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 5 ] [Wang, Lihua]Univ Queensland, Mat Engn, Brisbane, Qld 4072, Australia
  • [ 6 ] [Guan, Pengfei]Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R China
  • [ 7 ] [Guan, Pengfei]Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
  • [ 8 ] [Liu, Pan]Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
  • [ 9 ] [Chen, Mingwei]Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
  • [ 10 ] [Teng, Jiao]Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China
  • [ 11 ] [Chen, Dengke]Georgia Inst Technol, Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
  • [ 12 ] [Zhu, Ting]Georgia Inst Technol, Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
  • [ 13 ] [Xie, Weiyu]Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
  • [ 14 ] [Zhang, Shengbai]Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
  • [ 15 ] [Zhang, Ze]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310008, Zhejiang, Peoples R China
  • [ 16 ] [Ma, Evan]Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
  • [ 17 ] [Chen, Mingwei]Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA

通讯作者信息:

  • 韩晓东

    [Han, Xiaodong]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China;;[Chen, Mingwei]Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan;;[Zhu, Ting]Georgia Inst Technol, Woodruff Sch Mech Engn, Atlanta, GA 30332 USA;;[Chen, Mingwei]Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA

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来源 :

NATURE COMMUNICATIONS

ISSN: 2041-1723

年份: 2017

卷: 8

1 6 . 6 0 0

JCR@2022

ESI学科: Multidisciplinary;

ESI高被引阀值:283

中科院分区:2

被引次数:

WoS核心集被引频次: 111

SCOPUS被引频次: 129

ESI高被引论文在榜: 0 展开所有

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