收录：
摘要：
Graphene on copper foil produced through chemical vapor deposition has been transferred to different substrates and the Raman signatures from graphene on semi-insulating GaAs, n-GaAs, SiO2 (300 nm)/ Si, boron-doped Si, phosphorus-doped Si have been studied. It spectra from graphene. The obtained results are important for nanometrology of graphene and graphene based devices.
关键词：
通讯作者信息：
电子邮件地址：
来源 ：
SOLID STATE COMMUNICATIONS
ISSN： 0038-1098
年份： 2017
卷： 264
页码： 31-34
2 . 1 0 0
JCR@2022
ESI学科： PHYSICS;
ESI高被引阀值：158
中科院分区：4
