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Author:

Zhang, F.-P. (Zhang, F.-P..) | Zeng, H. (Zeng, H..) | Lu, Q.-M. (Lu, Q.-M..) | Zhang, X. (Zhang, X..) | Zhang, J.-X. (Zhang, J.-X..)

Indexed by:

Scopus PKU CSCD

Abstract:

The rare earths doped Ca0.95RE0.05MnO3 (RE=Pr, Eu, Tb) oxide bulk samples are prepared by combining Sol-gel method and ceramics fabrication method, the samples have been analyzed by X-ray diffraction, scanning electron microscopy and electrical constants measuring apparatus. The results show that all the doped samples are of single phase with dense microstructure within the 5% doping content; the lattice is diminished for all doped samples; the un-doped CaMnO3 exhibits semiconductor behavior with moderately high electrical resistivity reaching 340 mΩ·cm at 373 K; the electrical resistivity for the doped samples is reduced with identical transportation mechanism, showing slightly enhanced resistivity value along with Pr, Eu and Tb; the energy needed for polaron carrier to hop is narrowed by doping; the praseodymium doped Ca0.95Pr0.05MnO3 sample is found possessing lowest electrical resistivity reaching 8 mΩ·cm at 373 K, which is far lower than that of the parent sample.

Keyword:

CaMnO3; Electrical transport property; Rare earth doping

Author Community:

  • [ 1 ] [Zhang, F.-P.]Institute of Physics, Henan University of Urban Construction, Pingdingshan 467036, China
  • [ 2 ] [Zeng, H.]Beijing Key Laboratory of Energy Nanomaterials, Advance Technology and Materials Co., Ltd, China Iron and steel Research Institute Group, Beijing 100081, China
  • [ 3 ] [Lu, Q.-M.]College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Zhang, X.]College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 5 ] [Zhang, J.-X.]College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China

Reprint Author's Address:

  • [Zhang, F.-P.]Institute of Physics, Henan University of Urban Construction, Pingdingshan 467036, China

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Source :

Journal of Functional Materials and Devices

ISSN: 1007-4252

Year: 2013

Issue: 1

Volume: 19

Page: 37-42

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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