• 综合
  • 标题
  • 关键词
  • 摘要
  • 学者
  • 期刊-刊名
  • 期刊-ISSN
  • 会议名称
搜索

作者:

Zhang, X.-L. (Zhang, X.-L..) | Zhang, J. (Zhang, J..) | Xie, X.-S. (Xie, X.-S..) | Lv, C.-Z. (Lv, C.-Z..)

收录:

Scopus PKU CSCD

摘要:

A novel IGBT 3-D thermal model is implemented. The thermal distribution is simulated and analyzed by using the Finite Element Method - based analytical software ANSYS. Simulation results show that thermal coupling aggravate the self - heating of the device, it is becoming to select 10 μm distance between cells, Temperature dependent thermal conductivity of Si was considered during simulation, the results indicate the peak temperature rise 4.8K in the same power(P = 1W). When the die attach exists the void, the temperature distribution of IGBT is brought more changes, the surface temperature increase 24.9K in contrast with no void of the die attach.

关键词:

Die attach; IGBT thermal model; Simulation; Thermal distribution

作者机构:

  • [ 1 ] [Zhang, X.-L.]School of Elec. Inf. and Auto., Beijing University of Technology, Beijing 100124, China
  • [ 2 ] [Zhang, J.]School of Elec. Inf. and Auto., Beijing University of Technology, Beijing 100124, China
  • [ 3 ] [Xie, X.-S.]School of Elec. Inf. and Auto., Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Lv, C.-Z.]School of Elec. Inf. and Auto., Beijing University of Technology, Beijing 100124, China

通讯作者信息:

  • [Zhang, X.-L.]School of Elec. Inf. and Auto., Beijing University of Technology, Beijing 100124, China

电子邮件地址:

查看成果更多字段

相关关键词:

相关文章:

来源 :

Journal of Functional Materials and Devices

ISSN: 1007-4252

年份: 2011

期: 6

卷: 17

页码: 555-558

被引次数:

WoS核心集被引频次:

SCOPUS被引频次:

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 0

归属院系:

在线人数/总访问数:595/4948703
地址:北京工业大学图书馆(北京市朝阳区平乐园100号 邮编:100124) 联系我们:010-67392185
版权所有:北京工业大学图书馆 站点建设与维护:北京爱琴海乐之技术有限公司