The　anisotropy　of　beta-Sn　grain　can　significantly　affect　the　electromigration　(EM)　behavior　in　Sn3.0Ag0.5Cu　(SAC305)　solder　interconnects.　A　real　ball　grid　array　(BGA)　specimen　with　a　cross　sectioned　edge　row　suffered　electromigration　for　600　h　to　investigate　the　effects　of　beta-Sn　c-axis　on　the　behavior　of　electromigration　in　SAC305　solder　interconnects.　Scanning　electron　microscopy　(SEM)　and　electron　backscattered　diffraction　(EBSD)　were　used　to　obtain　the　microstructure　and　orientation　of　beta-Sn　grains　in　as-reflowed　and　low　current　density　conditions.　Besides,　the　orientation　of　c-axis　had　a　great　effect　on　the　growth　direction　of　IMCs　in　solder　matrix.　The　solder　interconnect　with　the　Sn　grain　c-axis　pointing　the　positive　direction　of　ND　would　emerge　serious　electromigration　phenomena.　The　density　of　Cu6Sn5　IMCs　distributing　at　the　surface　of　solder　matrix　increased　obviously.　However,　when　Sn　grain　c-axis　was　in　the　same　direction　with　the　opposite　direction　of　ND,　the　original　Cu6Sn5　IMCs　in　as-reflowed　solder　interconnect　disappeared.　Therefore,　the　results　show　that　the　solder　interconnects　will　performance　a　different　electromigration　behavior　due　to　the　direction　of　c-axis　in　Sn　grain:　the　growth　direction　of　Cu6Sn5　IMCs　in　solder　matrix　will　along　the　c-axis　accompanied　growing　into　solder　matrix　or　gathering　at　the　surface　of　the　cross　section.