Molybdenum　disulfide　(MoS2)　is　one　of　the　most　important　two-dimensional　materials　after　graphene.　Monolayer　MoS2　has　a　direct　bandgap　(1.9　eV)　and　is　potentially　suitable　for　post-silicon　electronics.　Among　all　atomically　thin　semiconductors,　MoS2＇s　synthesis　techniques　are　more　developed.　Here,　we　review　the　recent　developments　in　the　synthesis　of　hexagonal　MoS2,　where　they　are　categorized　into　top-down　and　bottom-up　approaches.　Micromechanical　exfoliation　is　convenient　for　beginners　and　basic　research.　Liquid　phase　exfoliation　and　solutions　for　chemical　processes　are　cheap　and　suitable　for　large-scale　production;　yielding　materials　mostly　in　powders　with　different　shapes,　sizes　and　layer　numbers.　MoS2　films　on　a　substrate　targeting　high-end　nanoelectronic　applications　can　be　produced　by　chemical　vapor　deposition,　compatible　with　the　semiconductor　industry.　Usually,　metal　catalysts　are　unnecessary.　Unlike　graphene,　the　transfer　of　atomic　layers　is　omitted.　We　especially　emphasize　the　recent　advances　in　metalorganic　chemical　vapor　deposition　and　atomic　layer　deposition,　where　gaseous　precursors　are　used.　These　processes　grow　MoS2　with　the　smallest　building-blocks,　naturally　promising　higher　quality　and　controllability.　Most　likely,　this　will　be　an　important　direction　in　the　field.　Nevertheless,　today　none　of　those　methods　reproducibly　produces　MoS2　with　competitive　quality.　There　is　a　long　way　to　go　for　MoS2　in　real-life　electronic　device　applications.