Scalabilities of LEDs and VCSELs with tunnel-regenerated multi-active region structure - Details

Author：

Guo, X. (Guo, X..) (Scholars：郭霞) | Luan, X. (Luan, X..) | Wang, W. (Wang, W..) (Scholars：王伟) | Guo, C. (Guo, C..) | Shen, G. (Shen, G..)

Indexed by：

Scopus CSCD

Abstract：

Scalabilities　of　light-emitting　diodes　(LEDs)　and　vertical-cavity　surface-emitting　lasers　(VCSELs)　with　tunnel-regenerated　multi-active-region　(TRMAR)　structure　were　investigated.　It　was　found　that　the　output　optical　power　and　quantum　efficiency　of　these　new　LEDs　with　TRMAR　increased　with　the　number　of　its　active　regions,　but　the　threshold　gain　and　threshold　current　density　decreased.　However,　for　VCSELs　with　TRMAR,　the　differential　quantum　efficiency　and　optical　power　increased　with　the　number　of　the　active　region.　The　results　suggest　that　LEDs　and　VCSELs　with　the　TRMAR　structure　have　some　potential　advantages　over　the　conventional　LEDs　or　VCSELs　in　high　internal　quantum　efficiency,　low　heat　generation,　high　round-trip　gain,　and　so　on.　These　advantages　will　make　TRMAR　LEDs　or　VCSELs　more　attractive　for　the　industrial　application.　©　2012　Higher　Education　Press　and　Springer-Verlag　Berlin　Heidelberg.

Keyword：

cascade; lightemitting diodes (LEDs); scalability; tunnel junction; vertical-cavity surface-emitting lasers (VCSELs)

Author Community：

[ 1 ] [Guo, X.]Photonic Device Research Laboratory (PDRL), Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Luan, X.]Photonic Device Research Laboratory (PDRL), Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Wang, W.]Photonic Device Research Laboratory (PDRL), Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Guo, C.]Photonic Device Research Laboratory (PDRL), Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Shen, G.]Photonic Device Research Laboratory (PDRL), Beijing University of Technology, Beijing, 100124, China

Reprint Author's Address：

郭霞
[Guo, X.]Photonic Device Research Laboratory (PDRL), Beijing University of Technology, Beijing, 100124, China

Email：

guo@bjut.edu.cn

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Source ：

Frontiers of Optoelectronics

ISSN： 2095-2759

Year： 2013

Issue： 1

Volume： 6

Page： 97-101

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 2

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 0

Affiliated Colleges：

材料与制造学部

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