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作者:

Guo, X. (Guo, X..) (学者:郭霞) | Luan, X. (Luan, X..) | Wang, W. (Wang, W..) (学者:王伟) | Guo, C. (Guo, C..) | Shen, G. (Shen, G..)

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摘要:

Scalabilities of light-emitting diodes (LEDs) and vertical-cavity surface-emitting lasers (VCSELs) with tunnel-regenerated multi-active-region (TRMAR) structure were investigated. It was found that the output optical power and quantum efficiency of these new LEDs with TRMAR increased with the number of its active regions, but the threshold gain and threshold current density decreased. However, for VCSELs with TRMAR, the differential quantum efficiency and optical power increased with the number of the active region. The results suggest that LEDs and VCSELs with the TRMAR structure have some potential advantages over the conventional LEDs or VCSELs in high internal quantum efficiency, low heat generation, high round-trip gain, and so on. These advantages will make TRMAR LEDs or VCSELs more attractive for the industrial application. © 2012 Higher Education Press and Springer-Verlag Berlin Heidelberg.

关键词:

cascade; lightemitting diodes (LEDs); scalability; tunnel junction; vertical-cavity surface-emitting lasers (VCSELs)

作者机构:

  • [ 1 ] [Guo, X.]Photonic Device Research Laboratory (PDRL), Beijing University of Technology, Beijing, 100124, China
  • [ 2 ] [Luan, X.]Photonic Device Research Laboratory (PDRL), Beijing University of Technology, Beijing, 100124, China
  • [ 3 ] [Wang, W.]Photonic Device Research Laboratory (PDRL), Beijing University of Technology, Beijing, 100124, China
  • [ 4 ] [Guo, C.]Photonic Device Research Laboratory (PDRL), Beijing University of Technology, Beijing, 100124, China
  • [ 5 ] [Shen, G.]Photonic Device Research Laboratory (PDRL), Beijing University of Technology, Beijing, 100124, China

通讯作者信息:

  • 郭霞

    [Guo, X.]Photonic Device Research Laboratory (PDRL), Beijing University of Technology, Beijing, 100124, China

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来源 :

Frontiers of Optoelectronics

ISSN: 2095-2759

年份: 2013

期: 1

卷: 6

页码: 97-101

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SCOPUS被引频次: 2

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