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作者:

Yang, Dingfeng (Yang, Dingfeng.) | Yao, Wei (Yao, Wei.) | Yan, Yanci (Yan, Yanci.) | Qiu, Wujie (Qiu, Wujie.) | Guo, Lijie (Guo, Lijie.) | Lu, Xu (Lu, Xu.) | Uher, Ctirad (Uher, Ctirad.) | Han, Xiaodong (Han, Xiaodong.) (学者:韩晓东) | Wang, Guoyu (Wang, Guoyu.) | Yang, Tao (Yang, Tao.) | Zhou, Xiaoyuan (Zhou, Xiaoyuan.)

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SCIE

摘要:

The development of new routes for the production of thermoelectric materials with low-cost and high-performance characteristics has been one of the long-term strategies for saving and harvesting thermal energy. Herein, we report a new approach for improving thermoelectric properties by employing the intrinsically low thermal conductivity of a quasi-one-dimensional (quasi-1D) crystal structure and optimizing the power factor with aliovalent ion doping. As an example, we demonstrated that SbCrSe3, in which two parallel chains of CrSe6 octahedra are linked by antimony atoms, possesses a quasi-1D property that resulted in an ultra-low thermal conductivity of 0.56 W m(-1) K-1 at 900 K. After maximizing the power factor by Pb doping, the peak ZT value of the optimized Pb-doped sample reached 0.46 at 900 K, which is an enhancement of 24 times that of the parent SbCrSe3 structure. The mechanisms that lead to low thermal conductivity derive from anharmonic phonons with the presence of the lone-pair electrons of Sb atoms and weak bonds between the CrSe6 double chains. These results shed new light on the design of new and high-performance thermoelectric materials.

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作者机构:

  • [ 1 ] [Yang, Dingfeng]Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, 266 Fangzheng Ave,Shuitu Hitech Ind Pk, Chongqing 400714, Peoples R China
  • [ 2 ] [Wang, Guoyu]Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, 266 Fangzheng Ave,Shuitu Hitech Ind Pk, Chongqing 400714, Peoples R China
  • [ 3 ] [Yang, Dingfeng]Chongqing Univ, Dept Chem, Coll Chem & Chem Engn, 55 Univ South Rd, Chongqing 401331, Peoples R China
  • [ 4 ] [Yang, Tao]Chongqing Univ, Dept Chem, Coll Chem & Chem Engn, 55 Univ South Rd, Chongqing 401331, Peoples R China
  • [ 5 ] [Yang, Dingfeng]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Dept Appl Math & Phys, Beijing, Peoples R China
  • [ 6 ] [Han, Xiaodong]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Dept Appl Math & Phys, Beijing, Peoples R China
  • [ 7 ] [Yao, Wei]Chongqing Univ, Dept Appl Phys, Coll Phys, 55 Univ South Rd, Chongqing 401331, Peoples R China
  • [ 8 ] [Yan, Yanci]Chongqing Univ, Dept Appl Phys, Coll Phys, 55 Univ South Rd, Chongqing 401331, Peoples R China
  • [ 9 ] [Guo, Lijie]Chongqing Univ, Dept Appl Phys, Coll Phys, 55 Univ South Rd, Chongqing 401331, Peoples R China
  • [ 10 ] [Lu, Xu]Chongqing Univ, Dept Appl Phys, Coll Phys, 55 Univ South Rd, Chongqing 401331, Peoples R China
  • [ 11 ] [Zhou, Xiaoyuan]Chongqing Univ, Dept Appl Phys, Coll Phys, 55 Univ South Rd, Chongqing 401331, Peoples R China
  • [ 12 ] [Qiu, Wujie]Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai, Peoples R China
  • [ 13 ] [Uher, Ctirad]Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
  • [ 14 ] [Wang, Guoyu]Univ Chinese Acad Sci, Beijing, Peoples R China

通讯作者信息:

  • [Wang, Guoyu]Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, 266 Fangzheng Ave,Shuitu Hitech Ind Pk, Chongqing 400714, Peoples R China;;[Yang, Tao]Chongqing Univ, Dept Chem, Coll Chem & Chem Engn, 55 Univ South Rd, Chongqing 401331, Peoples R China;;[Zhou, Xiaoyuan]Chongqing Univ, Dept Appl Phys, Coll Phys, 55 Univ South Rd, Chongqing 401331, Peoples R China

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来源 :

NPG ASIA MATERIALS

ISSN: 1884-4049

年份: 2017

卷: 9

9 . 7 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:287

中科院分区:2

被引次数:

WoS核心集被引频次: 48

SCOPUS被引频次: 47

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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