The　residual　stress　on　ground　wafer　surface　layer　are　detected　by　stepwise　corrosion　and　Raman　Spectroscopy.　The　corrosion　depth　is　measured　by　scanning　white　light　interferometric.　The　results　show　that　the　ground　wafer　surface　layer　mainly　present　compressive　stress.　For　rough　ground　wafer,　the　compressive　stress　layer　thickness　is　about　45　nm,　the　compressive　stress　transform　to　tensile　stress　when　the　corrosion　depth　is　more　than　45　nm.　For　fine　ground　wafer,　the　compressive　stress　layer　thickness　is　about　65　nm,　the　compressive　stress　transform　to　tensile　stress　when　the　corrosion　depth　is　more　than　65　nm.　The　compressive　stress　layer　depth　of　rough　ground　wafer　is　smaller　than　that　of　fine　ground　wafer.　The　main　reasons　for　generation　of　residual　stress　are　phase　and　elastic-plastic　deformation.　©　2015　IEEE.