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作者:

Tan, Shihai (Tan, Shihai.) | Han, Jing (Han, Jing.) | Guo, Fu (Guo, Fu.) (学者:郭福)

收录:

EI Scopus SCIE

摘要:

The ball grid array (BGA) component was selected as the specimen with the outmost edge row cross-sectioned to investigate subgrain rotation behavior influenced by grain boundaries under thermal shock cycles condition. To study the subgrain rotation, the crystal orientation was obtained by electron backscattered diffraction(EBSD). The results showed that a lot of subgrains were generated in the solder joints due to cyclic stress caused by the high mismatched coefficient of thermal expansion (CTE) under the thermal shock cycles condition. And the subgrains near the chip-side and the twin grain boundaries were analyzed in detail to estimate the impact of the grain boundaries on the subgrain rotation behavior. The results showed that a large number of subgrain boundaries and several newly generated subgrains appeared at the tilted twin grain boundaries and the chip-side in the solder joint after 200 thermal shock cycles. Meantime, the subgrain rotation axes and misorientation angles were both calculated, and the dislocation slip was recognized to closely relate to subgrain rotation by comprehensively analyzing the rotation axes and misorientation angles. The subgrain rotation axes of the chip-side was about Sn [101] and [001], while the subgrains rotation near the tilted grain boundaries in the same dominant grain was different from that of the subgrains near the chip-side, and subgrain rotation axes were [101], [100] and [110]. There were also a large difference in the direction of subgrain rotation between the chip-side and the tilted twin grain boundaries. The subgrain rotation axes at both sides of twin grain boundaries were similar, but the rotation directions were opposite. (C) 2017 Elsevier Ltd. All rights reserved.

关键词:

Grain boundaries Grain orientation Lead-free solder Recrystallization Subgrain rotation

作者机构:

  • [ 1 ] [Tan, Shihai]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Han, Jing]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

通讯作者信息:

  • [Han, Jing]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

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来源 :

MICROELECTRONICS RELIABILITY

ISSN: 0026-2714

年份: 2017

卷: 71

页码: 126-133

1 . 6 0 0

JCR@2022

ESI学科: ENGINEERING;

ESI高被引阀值:92

中科院分区:4

被引次数:

WoS核心集被引频次: 11

SCOPUS被引频次: 9

ESI高被引论文在榜: 0 展开所有

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