Crystallization　of　glass/Aluminum　(50,　100,　200　nm)　/hydrogenated　amorphous　silicon　(a-Si:H)　(50,　100,　200　nm)　samples　by　Aluminum-induced　crystallization　(AIC)　is　investigated　in　this　article.　After　annealing　and　wet　etching,　we　found　that　the　continuity　of　the　polycrystalline　silicon　(poly-Si)　thin　films　was　strongly　dependent　on　the　double　layer　thicknesses.　Increasing　the　a-Si:H/Al　layer　thickness　ratio　would　improve　the　film　microcosmic　continuity.　However,　too　thick　Si　layer　might　cause　convex　or　peeling　off　during　annealing.　Scanning　electron　microscopy　(SEM)　and　Energy　Dispersive　X-ray　spectroscopy　(EDX)　are　introduced　to　analyze　the　process　of　the　peeling　off.　When　the　thickness　ratio　of　a-Si:H/Al　layer　is　around　1　to　1.5　and　a-Si:H　layer　is　less　than　200　nm,　the　poly-Si　film　has　a　good　continuity.　Hall　measurements　are　introduced　to　determine　the　electrical　properties.　Raman　spectroscopy　and　X-ray　diffraction　(XRD)　results　show　that　the　poly-Si　film　is　completely　crystallized　and　has　a　preferential　(111)　orientation.