Transparent　and　blue　ZnO:Ga　(GZO)　single　crystals　have　been　grown　by　the　traveling-solvent　floating-zone　technique　using　the　solvent　B2O3　+　MoO3　+　Nb2O5.　The　crystals　were　typically　9-14　mm　in　diameter　and　46-120　mm　in　length.　The　largest　one　was　phi　12　mm　x　120　mm　in　size.　All　GZO　crystals　were　grown　along　the　＜　001　＞　direction.　The　growth　rate　was　0.3-0.5　mm/h,　which　was　far　faster　than　0.1　mm/day　of　that　grown　by　the　hydrothermal　method.　The　crystalline　quality　has　been　characterized　by　single　crystal　X-ray　diffraction　and　X-ray　rocking　curve　measurements.　Ga　substituted　on　Zn-site　and　was　saturated　at　about　0.5　wt　%　of　Ga2O3　addition.　The　GZO　crystal　doped　with　0.5　wt　%　Ga2O3　has　the　lowest　electrical　resistivity　of　1.083　x　10(-3)　Omega　cm　and　the　highest　carrier　concentration　of　1.78　x　10(20)　cm(-3).　[GRAPHICS]