Rapid thermal annealing effects on structural and optical properties of self-assembled InAs/GaAs quantum dots capped by InAlAs/InGaAs layers - Details

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Abstract：

Effects　of　rapid　thermal　annealing　on　the　optical　and　structural　properties　of　self-assembled　InAs/GaAs　quantum　dots　capped　by　the　InAlAs/InGaAs　combination　layers　are　studied　by　photoluminescence　and　transmission　electron　microscopy.　The　photoluminescence　measurement　shows　that　the　photoluminescence　peak　of　the　sample　after　850°C　rapid　thermal　annealing　is　blue　shifted　with　370　meV　and　the　excitation　peak　intensity　increases　by　a　factor　of　about　2.7　after　the　rapid　thermal　annealing,　which　indicates　that　the　InAs　quantum　dots　have　experienced　an　abnormal　transformation　during　the　annealing.　The　transmission　electron　microscopy　shows　that　the　quantum　dots　disappear　and　a　new　InAlGaAs　single　quantum　well　structure　forms　after　the　rapid　thermal　annealing　treatment.　The　transformation　mechanism　is　discussed.　These　abnormal　optical　properties　are　attributed　to　the　structural　transformation　of　these　quantum　dots　into　a　single　quantum　well.　©　2005　Chinese　Physical　Society　and　IOP　Publishing　Ltd.

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[ 1 ] [Lü, W.]Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080, China
[ 2 ] [Lü, W.]Department of Materials Science, College of Materials Science and Engineering, Jilin University, Changchun 130012, China
[ 3 ] [Li, D.-B.]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China
[ 4 ] [Zhang, Z.-Y.]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China
[ 5 ] [Li, C.-R.]Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080, China
[ 6 ] [Zhang, Z.]Beijing University of Technology, Beijing 100022, China
[ 7 ] [Xu, B.]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China
[ 8 ] [Wang, Z.-G.]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China

Reprint Author's Address：

[Lü, W.]Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080, China

Email：

lw@blem.ac.cn

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Source ：

Chinese Physics Letters

ISSN： 0256-307X

Year： 2005

Issue： 4

Volume： 22

Page： 967-970

3 . 5 0 0

JCR@2022

ESI Discipline： PHYSICS;

JCR Journal Grade：2

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 1

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