In　silicon,　the　effect　of　Combined　Lifetime　Treatment　(CLT)　involving　platinum　diffusion　and　subsequent　electron　irradiation　is　different　from　the　separate　treatments　of　platinum　diffusion　and　electron　irradiation,　even　the　treatment　of　electron　irradiation　followed　by　platinum　diffusion.　In　this　paper,　we　investigated　the　experimental　behavior　of　different　kinds　of　lifetime　treated　samples.　We　found　that　the　reverse　leakage　current　(I-rr)　increases　with　the　increasing　platinum　diffusion　temperature　or　electron　irradiation　dose　in　the　separate　treatments.　Conversely,　I-rr　of　the　CLT　samples　decreased　with　rising　platinum　diffusion　temperature　at　the　same　dose　of　subsequent　electron　irradiation.　By　deep-level　transient　spectroscopy　(DLTS),　a　new　energy　level　E7　(Ec　-0.376　eV)　was　found　in　our　CLT　samples.　The　new　level　E7　suppresses　the　dominance　of　the　deeper　level　E8　(Ec　-0.476　eV),　which　is　caused　by　electron　irradiation　directly　and　results　in　I-rr＇s　increase.　The　formation　of　the　level　E7　comes　from　the　complex　defect　combined　effect　between　platinum　atoms　and　silicon　vacancies,　and　it　affects　device＇s　characteristics　finally.　These　research　will　be　helpful　to　the　development　of　platinum-diffused　devices　used　in　intense　electron　irradiation　environments.　(C)　2016　Elsevier　B.V.　All　rights　reserved.