We　realize　for　the　first　time　the　local　lifetime　control　by　means　of　gettering　platinum　through　the　induced　defects　created　by　proton　implantation　in　high-voltage　power　diodes.　The　region　of　the　damage　resulting　from　the　proton　irradiation　was　decorated　by　the　substitutional　platinum　diffused　from　PtSi　anode　at　700°C/60　minutes　annealing.　Finally,　the　ratio　of　the　platinum　concentration　of　maximum　damage　region　to　the　damage　tail　region　is　1.5-2.　With　the　comparison　of　the　traditional　platinum-diffusion　lifetime　control,　this　new　technique　demonstrates　the　good　potential　to　fabricate　power　P-i-N　diodes　with　the　faster　reverse　recovery　speed,　the　larger　softness　recovery　factor　and　the　lower　leakage　current.