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作者:

Wang, B. (Wang, B..) (学者:王波) | Wang, R.Z. (Wang, R.Z..) (学者:王如志) | Zhou, H. (Zhou, H..) | Yan, X.H. (Yan, X.H..) | Cao, J.X. (Cao, J.X..) | Wang, H. (Wang, H..) | Yan, H. (Yan, H..)

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Scopus

摘要:

An electron-emission theoretical model integrating the change in the grain size of nanocrystalline cubic boron nitride (c-BN) thin films was established. To understand better the essence of field emission, an accurate numerical scheme, the transfer matrix method, that can be used to compute the tunneling coefficients of the actual surface barrier, was also adopted. The present results show that the emission current from nanocrystalline grain films is far larger than that from regular grain films or bulk c-BN. © 2003 Elsevier Ltd. All rights reserved.

关键词:

Cubic boron nitride; Field emission

作者机构:

  • [ 1 ] [Wang, B.]Key Lab. of Adv. Funct. Materials, China Education Ministry, Beijing Polytechnic University, Beijing 100022, China
  • [ 2 ] [Wang, R.Z.]Key Lab. of Adv. Funct. Materials, China Education Ministry, Beijing Polytechnic University, Beijing 100022, China
  • [ 3 ] [Zhou, H.]Key Lab. of Adv. Funct. Materials, China Education Ministry, Beijing Polytechnic University, Beijing 100022, China
  • [ 4 ] [Yan, X.H.]Key Lab. of Adv. Funct. Materials, China Education Ministry, Beijing Polytechnic University, Beijing 100022, China
  • [ 5 ] [Yan, X.H.]Department of Physics, Xiangtan University, Xiangtan 411105, Hunan, China
  • [ 6 ] [Cao, J.X.]Department of Physics, Xiangtan University, Xiangtan 411105, Hunan, China
  • [ 7 ] [Wang, H.]Key Lab. of Adv. Funct. Materials, China Education Ministry, Beijing Polytechnic University, Beijing 100022, China
  • [ 8 ] [Yan, H.]Key Lab. of Adv. Funct. Materials, China Education Ministry, Beijing Polytechnic University, Beijing 100022, China

通讯作者信息:

  • [Yan, H.]Key Lab. of Adv. Funct. Materials, China Education Ministry, Beijing Polytechnic University, Beijing 100022, China

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来源 :

Microelectronics Journal

ISSN: 0026-2692

年份: 2004

期: 4

卷: 35

页码: 371-374

语种: 英文

2 . 2 0 0

JCR@2022

ESI学科: ENGINEERING;

JCR分区:3

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WoS核心集被引频次: 0

SCOPUS被引频次: 3

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