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作者:

Li, Z.-G. (Li, Z.-G..) | Lu, Z.-J. (Lu, Z.-J..)

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Scopus PKU CSCD

摘要:

Three-dimension finite element modeling is used to simulate and compare the current density, temperature and the gradients of distribution in Copper-filled interconnects via hole structure. To the same barrier material, the via hole with different slope is simulated. The result of the simulation shows that optimizing the slope of the via hole and selecting the barrier material will improved the interconnect reliability. All these provide valuable reference to the design of the via hole.

关键词:

Barrier material; Cu interconnect; Finite element; Via

作者机构:

  • [ 1 ] [Li, Z.-G.]Sch. of Electron. and Control Eng., Beijing Polytech. Univ., Beijing 100022, China
  • [ 2 ] [Lu, Z.-J.]Sch. of Electron. and Control Eng., Beijing Polytech. Univ., Beijing 100022, China

通讯作者信息:

  • [Li, Z.-G.]Sch. of Electron. and Control Eng., Beijing Polytech. Univ., Beijing 100022, China

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来源 :

Acta Electronica Sinica

ISSN: 0372-2112

年份: 2003

期: 7

卷: 31

页码: 1104-1106

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