SiCp/AlN　composite　materials　can　be　prepared　by　melt　infiltration　of　Al-Mg-Si　alloy　into　SiC　preform　in　high　pure　N2　atmosphere.　The　phase　compositions,　morphology　and　micro-zone　analysis　of　nitridation　products　were　determined　and　observed　by　using　XRD,　SEM/EDS　and　EMPA.　The　results　indicate　that　SiCp/AlN　composite　materials　can　be　produced　in　such　a　melt　infiltration　process　at　1200°C.　For　Al-Mg-Si　alloy,　Mg　element　easily　evaporates　and　reacts　with　a　micro　amount　of　O2　in　the　N2　atmosphere　to　guarantee　the　low　partial　pressure　of　O2.　Meanwhile,　Si　element　can　improve　the　wet　ability　of　Al-Si　melt　on　SiC　particles.　In　such　a　case,　alloy　melt　can　easily　penetrate　into　SiC　preform　and　be　directly　nitrided　to　produce　SiCp/AlN　composite　materials　where　AlN　is　continuous　bonding　phase.　The　AlN　grown　in　the　forward　position　is　in　the　nodules　form.　In　the　nodules,　AlN　grains　like　a　star　like　morphology　of　pillar-grains　are　arranged　from　the　center　to　the　edge.　Between　the　pillar-grains,　many　micro-channels　are　located.　EMPA　shows　that　the　distribution　of　Si　element　is　much　more　at　the　edge　of　the　nodular　AlN　than　at　its　center,　which　is　related　to　the　growth　mechanism　of　AlN.