Large-scale　periodic　dot　matrix　anti-reflective　microstructures　were　fabricated　on　the　surface　by　using　UV　picosecond　laser　with　rapid　line　scanning　to　improve　the　infrared　transmittance　of　As2Se3　glass.　In　the　study,　the　laser　ablation　threshold　of　As2Se3　glass　was　concluded　and　the　optimal　line　scanning　method　was　designed.　The　transmittance　of　the　fabricated　chalcogenide　glass　increased　about　10.0　%　and　5.2%　in　wavelength　ranged　from　11.0　μm~12.4　μm　and　13.0　μm~14.2　μm,　respectively.　In　addition,　the　wettability　of　the　glass　was　not　damaged　by　laser　scanning.　The　processing　was　carried　out　in　air　condition　showing　low　cost,　high　controllability　and　high　efficiency.　It　only　took　3.65　s　to　finish　the　fabrication　of　8　mm×8　mm　surface　structures.　Both　the　size　and　space　of　the　surface　microstructure　unit　can　be　controlled　according　to　the　application　requirement.　The　removal　of　the　chalcogenide　glass　induced　by　laser　was　mainly　based　on　＂cold　fabrication＂　in　which　no　obvious　thermal　effects　inducing　the　element　change　on　the　surface　were　observed.　Higher　laser　energy　could　induce　obvious　thermal　effect　resulting　in　melting　of　the　ablation　points　and　bump　of　the　crater　edges.　©　2017,　Editorial　Office　of　Opto-Electronic　Engineering.　All　right　reserved.