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作者:

Guo, Jinjian (Guo, Jinjian.) | Zhu, Mankang (Zhu, Mankang.) | Li, Ling (Li, Ling.) | Qing, Tianhe (Qing, Tianhe.) | Wang, Cong (Wang, Cong.) | Liu, Liying (Liu, Liying.) | Zheng, Mupeng (Zheng, Mupeng.) | Hou, Yudong (Hou, Yudong.) (学者:侯育冬)

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EI Scopus SCIE

摘要:

In this work, the A-site complex perovskite K1/2Bi1/2TiO3 (KBT) was first found to demonstrate a normal-relaxor ferroelectric modulation by the annealing temperature. KBT ceramics were synthesized by the solid-state reaction method and subjected to a post-annealing at 800 degrees C or 1000 degrees C, respectively. It is found that the post-annealing at 800 degrees C switches KBT to a relaxor ferroelectric while the post-annealing at 1000 degrees C makes KBT develop into a normal ferroelectric. Besides, the sample annealed at 800 degrees C presented an inflection at 155 degrees C to decrease the Pr due to the enhanced relaxor behavior. Moreover, annealing at 1000 degrees C could promote the growth of the domains and the local ordering of A-site cations. It is believed that the modulation of KBT between the normal ferroelectric and relaxor was attributed to the domain size and the local ordering of A-site cations. Published by AIP Publishing.

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作者机构:

  • [ 1 ] [Guo, Jinjian]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Zhu, Mankang]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Li, Ling]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Qing, Tianhe]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Wang, Cong]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Zheng, Mupeng]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 7 ] [Hou, Yudong]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 8 ] [Liu, Liying]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China

通讯作者信息:

  • [Zhu, Mankang]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

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来源 :

JOURNAL OF APPLIED PHYSICS

ISSN: 0021-8979

年份: 2017

期: 1

卷: 121

3 . 2 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:158

中科院分区:3

被引次数:

WoS核心集被引频次: 21

SCOPUS被引频次: 23

ESI高被引论文在榜: 0 展开所有

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