您的检索：
学者姓名：孟军华
精炼检索结果：
年份
成果类型
收录类型
来源
综合
合作者
语言
清除所有精炼条件
摘要 ：
Multifunctional buried interface modification is key to boost the performance of perovskite solar cells (PSCs). Herein, a multifunctional passivator, N-(2-hydroxyethyl) ethylene diamine triacetic acid trisodium salt (HEDTA-3Na), is employed to modify an SnO2 electron transport layer (ETL) for fabricating efficient and stable PSCs. It is found that the addition of HEDTA-3Na not only reduces defect state density by passivating uncoordinated Sn4+ and Pb2+ defects in an ETL/perovskite interface, but also forms appropriate energy band alignment, facilitating electron extraction, and improves the quality of the perovskite film with enlarged grain sizes. In addition, the Na+ ions can diffuse into the perovskite layer to passivate iodine vacancy defects and inhibit ion migration. As a result, the PSC with HEDTA-3Na modification achieves a champion PCE of 23.11% with enhanced VOC and FF compared to the control device (20.82%). Moreover, the unencapsulated HEDTA-3Na-modified PSC retains 90% of its initial efficiency after 1600 hours at 25 degrees C and 20-25% relative humidity under ambient conditions. This work offers a simple and effective approach to synergistically improve the performance of PSCs with a single multifunctional molecule.
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | Wu, Rui , Meng, Junhua , Shi, Yiming et al. Multifunctional buried interface modification for efficient and stable SnO2-based perovskite solar cells [J]. | JOURNAL OF MATERIALS CHEMISTRY A , 2024 , 12 (21) : 12672-12680 . |
| MLA | Wu, Rui et al. "Multifunctional buried interface modification for efficient and stable SnO2-based perovskite solar cells" . | JOURNAL OF MATERIALS CHEMISTRY A 12 . 21 (2024) : 12672-12680 . |
| APA | Wu, Rui , Meng, Junhua , Shi, Yiming , Xia, Zhengchang , Yan, Chunxia , Zhang, Lisheng et al. Multifunctional buried interface modification for efficient and stable SnO2-based perovskite solar cells . | JOURNAL OF MATERIALS CHEMISTRY A , 2024 , 12 (21) , 12672-12680 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Van der Waals (vdW) heterostructures comprising of transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN) are promising building blocks for novel 2D devices. The vdW epitaxy provides a straightforward integration method for fabricating high-quality TMDs/h-BN vertical heterostructures. In this work, the vdW epitaxy of high-quality single-crystal HfSe2 on epitaxial h-BN/sapphire substrates by chemical vapor deposition is demonstrated. The epitaxial HfSe2 layers exhibit a uniform and atomically sharp interface with the underlying h-BN template, and the epitaxial relationship between HfSe2 and h-BN/sapphire is determined to HfSe2 (0001)[12${\mathrm{\bar{2}}}$10]//h-BN (0001)[11${\mathrm{\bar{1}}}$00]//sapphire (0001)[11${\mathrm{\bar{1}}}$00]. Impressively, the full width at half maximum of the rocking curve for the epitaxial HfSe2 layer on single-crystal h-BN is as narrow as 9.6 arcmin, indicating an extremely high degree of out-plane orientation and high crystallinity. Benefitting from the high crystalline quality of HfSe2 epilayers and the weak interfacial scattering of HfSe2/h-BN, the photodetector fabricated from the vdW epitaxial HfSe2 on single-crystal h-BN shows the best performance with an on/off ratio of 1 x 104 and a responsivity up to 43 mA W-1. Furthermore, the vdW epitaxy of other TMDs such as HfS2, ZrS2, and ZrSe2 is also experimentally demonstrated on single-crystal h-BN, suggesting the broad applicability of the h-BN template for the vdW epitaxy. Several high-quality single-crystalline transition metal dichalcogenides are directly grown on an epitaxial h-BN/sapphire substrate via vdW epitaxy, indicating the h-BN is an ideal template for vdW epitaxy. The full width at half maximum of the X-ray diffraction rocking curve for the HfSe2 layers on single-crystal h-BN is only 9.6 arcmin, indicating an extremely high degree of out-plane orientation and high crystallinity. image
关键词 ：
XRD rocking curve XRD rocking curve hexagonal boron nitride hexagonal boron nitride van der Waals epitaxy van der Waals epitaxy transition metal dichalcogenides transition metal dichalcogenides heterostructures heterostructures
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | Huang, Jidong , Meng, Junhua , Yang, Huabo et al. Van der Waals Epitaxy of High-Quality Transition Metal Dichalcogenides on Single-Crystal Hexagonal Boron Nitride [J]. | SMALL METHODS , 2024 . |
| MLA | Huang, Jidong et al. "Van der Waals Epitaxy of High-Quality Transition Metal Dichalcogenides on Single-Crystal Hexagonal Boron Nitride" . | SMALL METHODS (2024) . |
| APA | Huang, Jidong , Meng, Junhua , Yang, Huabo , Jiang, Ji , Xia, Zhengchang , Zhang, Siyu et al. Van der Waals Epitaxy of High-Quality Transition Metal Dichalcogenides on Single-Crystal Hexagonal Boron Nitride . | SMALL METHODS , 2024 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
本申请公开了一种甜菜碱盐酸盐改性的SnO2基钙钛矿太阳能电池及制备方法，所述太阳能电池的制备过程如下：(1)形成甜菜碱盐酸盐改性的SnO2溶液；(2)在洁净的透明导电基底上制备甜菜碱盐酸盐改性的SnO2电子传输层；(3)在电子传输层上制备PbI2薄膜；(4)在PbI2薄膜上制备FAxMA1‑xPbI3钙钛矿吸光层；(5)在吸光层上制备Spiro‑OMeTAD空穴传输层；(6)在空穴传输层上依次蒸镀MoO3和金属Ag电极，即得该钙钛矿太阳能电池。本发明通过甜菜碱盐酸盐改性的SnO2可以优化电子传输层与钙钛矿层的能级匹配，减少界面的非辐射复合，显著提高太阳能电池的开路电压和光电转换效率。
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | 孟军华 , 李艳敏 , 吴瑞 . 一种甜菜碱盐酸盐改性的SnO2基钙钛矿太阳能电池及制备方法 : CN202310181265.5[P]. | 2023-02-24 . |
| MLA | 孟军华 et al. "一种甜菜碱盐酸盐改性的SnO2基钙钛矿太阳能电池及制备方法" : CN202310181265.5. | 2023-02-24 . |
| APA | 孟军华 , 李艳敏 , 吴瑞 . 一种甜菜碱盐酸盐改性的SnO2基钙钛矿太阳能电池及制备方法 : CN202310181265.5. | 2023-02-24 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
As a common impurity, H plays a role in tuning the electrical properties of beta-Ga2O3 and has attracted immense interest. Despite years of investigations, the influence of H-doping on electrical properties is not always clear due to the lack of comprehensive characterization on both micro- and macro scale. In this work, we investigate the effects of the H-plasma treatment on the electrical properties of beta-Ga2O3 films by combining several techniques, from macroscale Hall and photoluminescence measurements to microscale conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). The incorporation of H in beta-Ga2O3 not only introduces shallow donor states such as H-i, but also passivates V-Ga defects by forming the V-Ga-4H complex. As a result, both the carrier concentration and mobility of H-doped beta-Ga2O3 film are significantly increased, corresponding to an enhancement of conductivity by four orders of magnitude in comparison with the intrinsic one. These results correlate well with the local conductivity and surface potential mappings obtained from CAFM and KPFM. Moreover, we found that the work function of beta-Ga2O3 thin films can also be tuned by the H-plasma treatment.
关键词 ：
Work function Work function beta-Ga2O3 film beta-Ga2O3 film Hydrogen doping Hydrogen doping Defects Defects Electrical properties Electrical properties
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | Shi, Yiming , Meng, Junhua , Chen, Jingren et al. Enhanced electrical conductivity and reduced work function of β-Ga2O3 thin films by hydrogen plasma treatment [J]. | JOURNAL OF ALLOYS AND COMPOUNDS , 2023 , 974 . |
| MLA | Shi, Yiming et al. "Enhanced electrical conductivity and reduced work function of β-Ga2O3 thin films by hydrogen plasma treatment" . | JOURNAL OF ALLOYS AND COMPOUNDS 974 (2023) . |
| APA | Shi, Yiming , Meng, Junhua , Chen, Jingren , Wu, Rui , Zhang, Lisheng , Jiang, Ji et al. Enhanced electrical conductivity and reduced work function of β-Ga2O3 thin films by hydrogen plasma treatment . | JOURNAL OF ALLOYS AND COMPOUNDS , 2023 , 974 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
一种EDTA‑2Na改性电子传输层的钙钛矿太阳能电池及其制备方法属于钙钛矿太阳能电池领域。该钙钛矿太阳能电池自下而上依次包括：衬底、透明导电电极、电子传输层、钙钛矿吸收层、空穴传输层、氧化钼层、顶金属电极，其中电子传输层材料为EDTA‑2Na改性的SnO2。本发明采用EDTA‑2Na对SnO2电子传输层进行改性，一方面EDTA‑2Na中的羧基能够通过酯化反应有效钝化SnO2表面由于氧空位而形成的羟基；另一方面EDTA‑2Na中的Na+能够通过热扩散进入到钙钛矿层中，从而钝化其中的负电荷缺陷，减少由于缺陷所引起的非辐射复合，显著提升EDTA‑2Na改性钙钛矿太阳能电池的光电转换效率和开路电压。
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | 孟军华 , 吴瑞 , 李艳敏 . 一种EDTA-2Na改性电子传输层的钙钛矿太阳能电池及其制备方法 : CN202211139919.X[P]. | 2022-09-20 . |
| MLA | 孟军华 et al. "一种EDTA-2Na改性电子传输层的钙钛矿太阳能电池及其制备方法" : CN202211139919.X. | 2022-09-20 . |
| APA | 孟军华 , 吴瑞 , 李艳敏 . 一种EDTA-2Na改性电子传输层的钙钛矿太阳能电池及其制备方法 : CN202211139919.X. | 2022-09-20 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Integrating two-dimensional ultra-wide band gap hexagonal boron nitride (h-BN) on beta-Ga2O3 surface into van der Waals heterostructures is of great interest for developing novel high-power devices and optoelectronic devices because of their unique properties. The energy band alignment at the heterointerface is critical for device design, however, the band alignment of h-BN/beta-Ga2O3 heterojunction has not been investigated to date. In this work, the h-BN/B-Ga2O3 heterostructure is constructed by directly growing h-BN few-layer on the beta-Ga2O3 single crystal substrate using ion beam sputtering deposition method. The high-quality few-layer h-BN with the abrupt interface and smooth surface allow for the accurate determination of band alignment at the h-BN/beta-Ga2O3 heterointerface by X-ray photoelectron spectroscopies. The valence and conduction band offsets are determined to be 0.47 and 1.42 eV for the h-BN/beta-Ga2O3 heterostructure, respectively, with a type-II staggered band alignment. Furthermore, the electronic structures of h-BN/B-Ga2O3 heterostructure are also investigated experimentally and theoretically. These results indicate that the h-BN/B-Ga2O3 heterostructure has great potential in (opto)electronic devices.
关键词 ：
beta-Ga2O3 beta-Ga2O3 Catalyst-free growth Catalyst-free growth Band offsets Band offsets Heterostructure Heterostructure Hexagonal boron nitride Hexagonal boron nitride
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | Chen, Jingren , Meng, Junhua , Cheng, Yong et al. Band alignment of h-BN/beta-Ga2O3 heterostructure grown via ion beam sputtering deposition [J]. | APPLIED SURFACE SCIENCE , 2022 , 604 . |
| MLA | Chen, Jingren et al. "Band alignment of h-BN/beta-Ga2O3 heterostructure grown via ion beam sputtering deposition" . | APPLIED SURFACE SCIENCE 604 (2022) . |
| APA | Chen, Jingren , Meng, Junhua , Cheng, Yong , Shi, Yiming , Wang, Gaokai , Huang, Jidong et al. Band alignment of h-BN/beta-Ga2O3 heterostructure grown via ion beam sputtering deposition . | APPLIED SURFACE SCIENCE , 2022 , 604 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
The growth of trace amount of niobium (Nb) doped beta-Ga2O3 thin films have been demonstrated on (0001) sapphire substrates by radio frequency magnetron co-sputtering method. The crystallization, morphology and optical properties of Nb doped beta-Ga2O3 films have been investigated. The deep ultraviolet (DUV) photodetector with a metal-semiconductor-metal structure based on trace amount of Nb doped beta-Ga2O3 thin film was fabricated. The DUV photodetector exhibits high photo-to-dark-current ratio and fast photo-response speed, suggesting the performance of beta-Ga2O3 photodetector can be improved by doping trace amount of Nb in beta-Ga2O3 thin film.
关键词 ：
Deep ultraviolet photodetector Deep ultraviolet photodetector beta-Ga2O3 beta-Ga2O3 Photo-response Photo-response Nb-doped Nb-doped
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | Zhang, H. , Deng, J. X. , Zhang, Q. et al. Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response [J]. | OPTIK , 2021 , 243 . |
| MLA | Zhang, H. et al. "Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response" . | OPTIK 243 (2021) . |
| APA | Zhang, H. , Deng, J. X. , Zhang, Q. , Wang, X. L. , Meng, J. H. , Xu, Z. Y. et al. Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response . | OPTIK , 2021 , 243 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Monoclinic beta phase Ga2O3 has been considered as a promising candidate for next generation radio frequency and high-power devices because of its ultrawide bandgap and high breakdown field. The development of epitaxial growth techniques and the synthesis of high quality beta-Ga2O3 thin films are crucial for the device applications. In this work, the heteroepitaxial beta-Ga2O3 thin films were grown on sapphire (0001) substrates by low pressure chemical vapor deposition. The influence of growth parameters such as the source/substrate temperatures, the oxygen/Ar gas flow rates, and the surface morphology of substrate on the resultant crystallinity and surface roughness of the beta-Ga2O3 films were investigated. The beta-Ga2O3 heteroepitaxial layer on sapphire exhibits an RMS roughness of 1.82 nm, an XRD rocking curve of 1.18 degrees, and a growth rate of 0.72 mu m/h. The beta-Ga2O3 film grown on the buffer layer exhibit a smoother surface, whereas the chemical etching and annealing lead to an improved crystallinity and a rough surface. However, there is a trade-off between the crystallization and the surface roughness.
关键词 ：
Surface roughness Surface roughness Growth parameter Growth parameter Heteroepitaxal beta-Ga2O3 thin film Heteroepitaxal beta-Ga2O3 thin film Low pressure chemical vapor deposition Low pressure chemical vapor deposition Crystallinity Crystallinity
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | Jiao, Yujia , Jiang, Qian , Meng, Junhua et al. Growth and characteristics of beta-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition [J]. | VACUUM , 2021 , 189 . |
| MLA | Jiao, Yujia et al. "Growth and characteristics of beta-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition" . | VACUUM 189 (2021) . |
| APA | Jiao, Yujia , Jiang, Qian , Meng, Junhua , Zhao, Jinliang , Yin, Zhigang , Gao, Hongli et al. Growth and characteristics of beta-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition . | VACUUM , 2021 , 189 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Recently, the deep ultraviolet (DUV) photodetectors fabricated from two-dimensional (2D) hexagonal boron nitride (h-BN) layers have emerged as a hot research topic. However, the existing studies show that the h-BN-based photodetectors have relatively poor performance. In this work, C doping is utilized to modulate the properties of h-BN and improve the performance of the h-BN-based photodetectors. We synthesized the h-BN atomic layers with various C concentrations varying from 0 to 10.2 atom % by ion beam sputtering deposition through controlling the sputtering atmosphere. The h-BN phase remains stable when a small amount of C is incorporated into h-BN, whereas the introduction of a large amount of C impurities leads to the rapidly deteriorated crystallinity of h-BN. Furthermore, the DUV photodetectors based on C-doped h-BN layers were fabricated, and the h-BN-based photodetector with 7.5 atom % C exhibits the best performance with a responsivity of 9.2 mA.W-1, which is significantly higher than that of the intrinsic h-BN device. This work demonstrates that the C doping is a feasible and effective method for improving the performance of h-BN photodetectors.
关键词 ：
two-dimensional materials two-dimensional materials doping doping hexagonal boron-carbon-nitrogen hexagonal boron-carbon-nitrogen hexagonal boron nitride hexagonal boron nitride ion beam sputtering deposition ion beam sputtering deposition deep ultraviolet photodetectors deep ultraviolet photodetectors
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | Wang, Ye , Meng, Junhua , Tian, Yan et al. Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride [J]. | ACS APPLIED MATERIALS & INTERFACES , 2020 , 12 (24) : 27361-27367 . |
| MLA | Wang, Ye et al. "Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride" . | ACS APPLIED MATERIALS & INTERFACES 12 . 24 (2020) : 27361-27367 . |
| APA | Wang, Ye , Meng, Junhua , Tian, Yan , Chen, Yanan , Wang, Gaokai , Yin, Zhigang et al. Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride . | ACS APPLIED MATERIALS & INTERFACES , 2020 , 12 (24) , 27361-27367 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Surface plasmonic effect of metal nanoparticles is an effective method to improve the power conversion efficiency (PCE) of solar cells. In this work, the PCE of bulk heterojunction (BHJ) polymer solar cells was improved by Au nanoparticles (NPs). The Au NPs were embedded into PEDOT:PSS hole transport layer by spin coating on the ITO substrates. The Au NPs with a diameter of similar to 16 nm were prepared by the micellar method using polystyrene-block-poly (2-vinylpyridine) diblock polymer. The Au NPs prepared by this method are distributed uniformly in size and without agglomeration on the substrates. From both experimental and theoretical results, it can be seen that the light absorption of the active layer was increased because of the surface plasmonic effect of Au NPs. Meanwhile, the carrier transport performance of PEDOT:PSS was enhanced with introduced Au NPs. As a result, the PCE of BHJ solar cells was improved from 2.81 to 3.25% by incorporating Au NPs.
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | Gao, Hongli , Meng, Junhua , Sun, Junjie et al. Enhanced performance of polymer solar cells based on P3HT:PCBM via incorporating Au nanoparticles prepared by the micellar method [J]. | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2020 , 31 (13) : 10760-10767 . |
| MLA | Gao, Hongli et al. "Enhanced performance of polymer solar cells based on P3HT:PCBM via incorporating Au nanoparticles prepared by the micellar method" . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 31 . 13 (2020) : 10760-10767 . |
| APA | Gao, Hongli , Meng, Junhua , Sun, Junjie , Deng, Jinxiang . Enhanced performance of polymer solar cells based on P3HT:PCBM via incorporating Au nanoparticles prepared by the micellar method . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2020 , 31 (13) , 10760-10767 . |
| 导入链接 | NoteExpress RIS BibTex |
导出
| 数据： |
选中 到 |
| 格式： |
