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学者姓名：孟军华
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摘要 ：
The growth of trace amount of niobium (Nb) doped beta-Ga2O3 thin films have been demonstrated on (0001) sapphire substrates by radio frequency magnetron co-sputtering method. The crystallization, morphology and optical properties of Nb doped beta-Ga2O3 films have been investigated. The deep ultraviolet (DUV) photodetector with a metal-semiconductor-metal structure based on trace amount of Nb doped beta-Ga2O3 thin film was fabricated. The DUV photodetector exhibits high photo-to-dark-current ratio and fast photo-response speed, suggesting the performance of beta-Ga2O3 photodetector can be improved by doping trace amount of Nb in beta-Ga2O3 thin film.
关键词 ：
beta-Ga2O3 beta-Ga2O3 Deep ultraviolet photodetector Deep ultraviolet photodetector Nb-doped Nb-doped Photo-response Photo-response
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| GB/T 7714 | Zhang, H. , Deng, J. X. , Zhang, Q. et al. Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response [J]. | OPTIK , 2021 , 243 . |
| MLA | Zhang, H. et al. "Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response" . | OPTIK 243 (2021) . |
| APA | Zhang, H. , Deng, J. X. , Zhang, Q. , Wang, X. L. , Meng, J. H. , Xu, Z. Y. et al. Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response . | OPTIK , 2021 , 243 . |
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摘要 ：
Monoclinic β phase Ga2O3 has been considered as a promising candidate for next generation radio frequency and high-power devices because of its ultrawide bandgap and high breakdown field. The development of epitaxial growth techniques and the synthesis of high quality β-Ga2O3 thin films are crucial for the device applications. In this work, the heteroepitaxial β-Ga2O3 thin films were grown on sapphire (0001) substrates by low pressure chemical vapor deposition. The influence of growth parameters such as the source/substrate temperatures, the oxygen/Ar gas flow rates, and the surface morphology of substrate on the resultant crystallinity and surface roughness of the β-Ga2O3 films were investigated. The β-Ga2O3 heteroepitaxial layer on sapphire exhibits an RMS roughness of 1.82 nm, an XRD rocking curve of 1.18°, and a growth rate of 0.72 μm/h. The β-Ga2O3 film grown on the buffer layer exhibit a smoother surface, whereas the chemical etching and annealing lead to an improved crystallinity and a rough surface. However, there is a trade-off between the crystallization and the surface roughness. © 2021 Elsevier Ltd
关键词 ：
Buffer layers Buffer layers Crystallinity Crystallinity Epitaxial growth Epitaxial growth Flow of gases Flow of gases Gallium compounds Gallium compounds Growth rate Growth rate Low pressure chemical vapor deposition Low pressure chemical vapor deposition Morphology Morphology Sapphire Sapphire Substrates Substrates Surface morphology Surface morphology Surface roughness Surface roughness Thin films Thin films
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| GB/T 7714 | Jiao, Yujia , Jiang, Qian , Meng, Junhua et al. Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition [J]. | Vacuum , 2021 , 189 . |
| MLA | Jiao, Yujia et al. "Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition" . | Vacuum 189 (2021) . |
| APA | Jiao, Yujia , Jiang, Qian , Meng, Junhua , Zhao, Jinliang , Yin, Zhigang , Gao, Hongli et al. Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition . | Vacuum , 2021 , 189 . |
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摘要 ：
Surface plasmonic effect of metal nanoparticles is an effective method to improve the power conversion efficiency (PCE) of solar cells. In this work, the PCE of bulk heterojunction (BHJ) polymer solar cells was improved by Au nanoparticles (NPs). The Au NPs were embedded into PEDOT:PSS hole transport layer by spin coating on the ITO substrates. The Au NPs with a diameter of similar to 16 nm were prepared by the micellar method using polystyrene-block-poly (2-vinylpyridine) diblock polymer. The Au NPs prepared by this method are distributed uniformly in size and without agglomeration on the substrates. From both experimental and theoretical results, it can be seen that the light absorption of the active layer was increased because of the surface plasmonic effect of Au NPs. Meanwhile, the carrier transport performance of PEDOT:PSS was enhanced with introduced Au NPs. As a result, the PCE of BHJ solar cells was improved from 2.81 to 3.25% by incorporating Au NPs.
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| GB/T 7714 | Gao, Hongli , Meng, Junhua , Sun, Junjie et al. Enhanced performance of polymer solar cells based on P3HT:PCBM via incorporating Au nanoparticles prepared by the micellar method [J]. | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2020 , 31 (13) : 10760-10767 . |
| MLA | Gao, Hongli et al. "Enhanced performance of polymer solar cells based on P3HT:PCBM via incorporating Au nanoparticles prepared by the micellar method" . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 31 . 13 (2020) : 10760-10767 . |
| APA | Gao, Hongli , Meng, Junhua , Sun, Junjie , Deng, Jinxiang . Enhanced performance of polymer solar cells based on P3HT:PCBM via incorporating Au nanoparticles prepared by the micellar method . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2020 , 31 (13) , 10760-10767 . |
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摘要 ：
Quasi-two-dimensional (quasi-2D) perovskites are efficient luminescent materials due to their self-assembled quantum-well structure. We found that the organic cations have a significant effect on the structure and performance of quasi-2D perovskite-based light-emitting diodes (LEDs). Two classic organic cations, formamidinium (FA) and methylammonium (MA), were chosen for investigation. The MA-based quasi-2D perovskite has the largest band-gap n = 1 phase and a photoluminescence quantum yield (PLQY) as high as 85.3%, whereas this n = 1 phase is almost absent in the FA-based quasi-2D perovskite, which shows a moderate PLQY of 73.5%. However, the FA-based perovskite shows a much higher external quantum efficiency (15.4%) than the MA-based perovskite (0.93%) in LEDs. The lower electroluminescence efficiency of the MA-based perovskite could be ascribed to the poor hole injection. These results showed the importance of rational design of the quasi-2D perovskite for efficient LEDs.
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| GB/T 7714 | Yang, Xiaolei , Chu, Zema , Meng, Junhua et al. Effects of Organic Cations on the Structure and Performance of Quasi-Two-Dimensional Perovskite-Based Light-Emitting Diodes [J]. | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2019 , 10 (11) : 2892-2897 . |
| MLA | Yang, Xiaolei et al. "Effects of Organic Cations on the Structure and Performance of Quasi-Two-Dimensional Perovskite-Based Light-Emitting Diodes" . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS 10 . 11 (2019) : 2892-2897 . |
| APA | Yang, Xiaolei , Chu, Zema , Meng, Junhua , Yin, Zhigang , Zhang, Xingwang , Deng, Jinxiang et al. Effects of Organic Cations on the Structure and Performance of Quasi-Two-Dimensional Perovskite-Based Light-Emitting Diodes . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2019 , 10 (11) , 2892-2897 . |
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摘要 ：
Two-dimensional (2D) hexagonal boron nitride (h-BN) is considered as an ideal dielectric layer or substrate for other 2D heterostructure electronic devices. However, reported 2D h-BN films consist mostly of small sized and randomly oriented h-BN domains, resulting in a high density of grain boundaries during coalescence. Here, we report the growth of unidirectionally aligned h-BN domains in a large area on the Ni(111) epitaxial thin film on MgO(111) substrate by ion beam sputtering deposition. It is found that the in-plane orientation of the underlying Ni thin film, which can be controlled by its deposition temperature, plays a key role in the h-BN domain alignment. Furthermore, density functional theory calculations are performed to determine the favorable configuration of the triangular shaped h-BN domains on Ni(111). This work provides a promising approach to prepare unidirectionally aligned h-BN domains in a large area, and thus it is possible to achieve wafer-scale single crystal h-BN by stitching these h-BN domains.
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| GB/T 7714 | Meng, Junhua , Ming, Bangming , Zhang, Xingwang et al. Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)MgO Thin Films [J]. | CRYSTAL GROWTH & DESIGN , 2019 , 19 (1) : 453-459 . |
| MLA | Meng, Junhua et al. "Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)MgO Thin Films" . | CRYSTAL GROWTH & DESIGN 19 . 1 (2019) : 453-459 . |
| APA | Meng, Junhua , Ming, Bangming , Zhang, Xingwang , Gao, Menglei , Cheng, Likun , Yin, Zhigang et al. Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)MgO Thin Films . | CRYSTAL GROWTH & DESIGN , 2019 , 19 (1) , 453-459 . |
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摘要 ：
Two-dimensional (2D) hexagonal boron nitride (h-BN) is a promising candidate as a supporting substrate, a gate dielectric and a protecting layer for 2D electronic and photonic devices. Transition metals were usually adopted as substrates for the synthesis of 2D h-BN, however, catalyst-free growth of high-quality h-BN on dielectric substrates is still very challenging. Herein, we report the catalyst-free growth of 2D h-BN few-layers on sapphire substrates by ion beam sputtering deposition (IBSD). We find that the h-BN grown under conventional conditions is nonstoichiometric with an excess of B element, resulting in a large number of N vacancy defects and poor crystalline quality. The wafer-scale high quality 2D h-BN layers were synthesized on sapphire by the combination of surface nitridation and N+ sputtering. Furthermore, the 2D h-BN few-layers on sapphire were used to fabricate deep ultraviolet photodetectors, which exhibit better performance in comparison with the devices fabricated by the transferred h-BN.
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| GB/T 7714 | Gao, Menglei , Meng, Junhua , Chen, Yanan et al. Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2019 , 7 (47) : 14999-15006 . |
| MLA | Gao, Menglei et al. "Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors" . | JOURNAL OF MATERIALS CHEMISTRY C 7 . 47 (2019) : 14999-15006 . |
| APA | Gao, Menglei , Meng, Junhua , Chen, Yanan , Ye, Siyuan , Wang, Ye , Ding, Congyu et al. Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors . | JOURNAL OF MATERIALS CHEMISTRY C , 2019 , 7 (47) , 14999-15006 . |
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摘要 ：
Hafnium disulfide (HfS2) has attracted significant interest because of the predicted excellent electronic properties superior to group VIB transition metal dichalcogenides. On the other hand, atomically thin hexagonal boron nitride (h-BN) is an ideal dielectric substrate for optoelectronic applications of other 2D materials. Here, for the first time, we report the direct growth of high-quality atomic layered HfS(2)on few-layer h-BN transferred on SiO2/Si substrates by chemical vapor deposition. It was found that the HfS(2)layers are selectively grown on h-BN rather than on SiO2/Si. Density functional theory calculations are performed to help understand the mechanism of selective growth of HfS2. Furthermore, the photodetectors based on the HfS2/h-BN heterostructures exhibit excellent visible-light sensing performance, such as a high on/off ratio of more than 10(5), an ultrafast response rate of about 200 mu s, a high responsivity of 26.5 mA W-1, and a competitive detectivity exceeding 3 x 10(11)Jones, superior to the vast majority of the reported 2D materials based photodetectors. The remarkable performance of the HfS2/h-BN photodetector is attributed to the unique features of 2D h-BN substrate.
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| GB/T 7714 | Wang, Denggui , Meng, Junhua , Zhang, Xingwan et al. Selective Direct Growth of Atomic Layered HfS2 on Hexagonal Boron Nitride for High Performance Photodetectors [J]. | CHEMISTRY OF MATERIALS , 2018 , 30 (11) : 3819-3826 . |
| MLA | Wang, Denggui et al. "Selective Direct Growth of Atomic Layered HfS2 on Hexagonal Boron Nitride for High Performance Photodetectors" . | CHEMISTRY OF MATERIALS 30 . 11 (2018) : 3819-3826 . |
| APA | Wang, Denggui , Meng, Junhua , Zhang, Xingwan , Guo, Gencai , Yin, Zhigang , Liu, Heng et al. Selective Direct Growth of Atomic Layered HfS2 on Hexagonal Boron Nitride for High Performance Photodetectors . | CHEMISTRY OF MATERIALS , 2018 , 30 (11) , 3819-3826 . |
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| GB/T 7714 | Yang, Xiaolei , Zhang, Xingwang , Deng, Jinxiang et al. Efficient green light-emitting diodes based on quasi-two-dimensional composition and phase engineered perovskite with surface passivation (vol 9, 2018) [J]. | NATURE COMMUNICATIONS , 2018 , 9 . |
| MLA | Yang, Xiaolei et al. "Efficient green light-emitting diodes based on quasi-two-dimensional composition and phase engineered perovskite with surface passivation (vol 9, 2018)" . | NATURE COMMUNICATIONS 9 (2018) . |
| APA | Yang, Xiaolei , Zhang, Xingwang , Deng, Jinxiang , Chu, Zema , Jiang, Qi , Meng, Junhua et al. Efficient green light-emitting diodes based on quasi-two-dimensional composition and phase engineered perovskite with surface passivation (vol 9, 2018) . | NATURE COMMUNICATIONS , 2018 , 9 . |
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摘要 ：
Graphene-on-silicon (Gr/Si) Schottky junction solar cells have recently attracted considerable interest as promising candidates for low-cost photovoltaic applications. However, the efficiency of Gr/Si cells is still much lower than that of crystalline Si solar cells, which is mainly attributed to the interface recombination of carriers due to the low Gr/Si Schottky barrier. Herein, a few-layer hexagonal boron nitride (h-BN) is introduced to engineer the Gr/Si interface for improving device performance. The h-BN can act as an effective electron-blocking/hole-transporting layer due to its unique properties and appropriate band alignment with Si, and thus the interface recombination was suppressed and the open circuit voltage was remarkably increased. On the other hand, the series resistance of solar cells decreases due to an improving conductivity of graphene on h-BN, leading to an increased short circuit current density. Furthermore, the interface defects and contamination arising from the layer-by-layer transfer process can be eliminated by using a directly grown Gr/h-BN heterostructure. As a result, a maximum efficiency of 10.93% was achieved by combining h-BN interlayer and co-doping of graphene with Au nanoparticles and HNO3, which shows the great potential of the novel Gr/h-BN/Si solar cells. (C) 2016 Elsevier Ltd. All rights reserved.
关键词 ：
Graphene/h-BN heterostructures Graphene/h-BN heterostructures Graphene-on-silicon solar cells Graphene-on-silicon solar cells Hexagonal boron nitride Hexagonal boron nitride Interface engineering Interface engineering Schottky junctions Schottky junctions
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| GB/T 7714 | Meng, Jun-Hua , Liu, Xin , Zhang, Xing-Wang et al. Interface engineering for highly efficient graphene-on-silicon Schottky junction solar cells by introducing a hexagonal boron nitride interlayer [J]. | NANO ENERGY , 2016 , 28 : 44-50 . |
| MLA | Meng, Jun-Hua et al. "Interface engineering for highly efficient graphene-on-silicon Schottky junction solar cells by introducing a hexagonal boron nitride interlayer" . | NANO ENERGY 28 (2016) : 44-50 . |
| APA | Meng, Jun-Hua , Liu, Xin , Zhang, Xing-Wang , Zhang, Yue , Wang, Hao-Lin , Yin, Zhi-Gang et al. Interface engineering for highly efficient graphene-on-silicon Schottky junction solar cells by introducing a hexagonal boron nitride interlayer . | NANO ENERGY , 2016 , 28 , 44-50 . |
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