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学者姓名：王晓蕾
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摘要 ：
Lateral effect photodiodes sense the position of a laser beam by measuring the change of current between opposite anodes and a common cathode. They either require a bias current or the current is photogenerated. In either case, their linearity is affected by the non-uniformity of the current distribution between the anodes. We here propose a bias-free, lateral photo-diode, which consists of a resistive layer forming an extended Schottky contact to an intrinsic semiconductor. In our sensor, the photo-generated carriers do not diffuse laterally. Rather, their localization under the laser-beam results in a reduction of the barrier height due to image force effect. An open-circuit voltage appears between two opposite electrodes that is linear with the laser-beam position. A tetra-lateral configuration, with four anodes at the edges of a square-shaped sensor, allows sensing in two dimensions. (c) 2021 Elsevier B.V. All rights reserved.
关键词 ：
Photo-detectors Photo-detectors Position sensing Position sensing Schottky junctions Schottky junctions Image force effect Image force effect
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| GB/T 7714 | Wang, Xiaolei , Sun, Xupeng , Zhai, Tianrui et al. A bias-free, lateral effect position sensor photo-detector [J]. | SENSORS AND ACTUATORS A-PHYSICAL , 2021 , 330 . |
| MLA | Wang, Xiaolei et al. "A bias-free, lateral effect position sensor photo-detector" . | SENSORS AND ACTUATORS A-PHYSICAL 330 (2021) . |
| APA | Wang, Xiaolei , Sun, Xupeng , Zhai, Tianrui , Yang, Qianqian , Cui, Shuainan , Zhang, Jie et al. A bias-free, lateral effect position sensor photo-detector . | SENSORS AND ACTUATORS A-PHYSICAL , 2021 , 330 . |
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摘要 ：
One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III-V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.
关键词 ：
magnetic semiconductors magnetic semiconductors magnetic properties magnetic properties co-doping co-doping ion implantation ion implantation
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| GB/T 7714 | Yuan, Ye , Xie, Yufang , Yuan, Ning et al. The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting [J]. | MATERIALS , 2021 , 14 (15) . |
| MLA | Yuan, Ye et al. "The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting" . | MATERIALS 14 . 15 (2021) . |
| APA | Yuan, Ye , Xie, Yufang , Yuan, Ning , Wang, Mao , Heller, Rene , Kentsch, Ulrich et al. The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting . | MATERIALS , 2021 , 14 (15) . |
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摘要 ：
The growth of trace amount of niobium (Nb) doped beta-Ga2O3 thin films have been demonstrated on (0001) sapphire substrates by radio frequency magnetron co-sputtering method. The crystallization, morphology and optical properties of Nb doped beta-Ga2O3 films have been investigated. The deep ultraviolet (DUV) photodetector with a metal-semiconductor-metal structure based on trace amount of Nb doped beta-Ga2O3 thin film was fabricated. The DUV photodetector exhibits high photo-to-dark-current ratio and fast photo-response speed, suggesting the performance of beta-Ga2O3 photodetector can be improved by doping trace amount of Nb in beta-Ga2O3 thin film.
关键词 ：
beta-Ga2O3 beta-Ga2O3 Deep ultraviolet photodetector Deep ultraviolet photodetector Nb-doped Nb-doped Photo-response Photo-response
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| GB/T 7714 | Zhang, H. , Deng, J. X. , Zhang, Q. et al. Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response [J]. | OPTIK , 2021 , 243 . |
| MLA | Zhang, H. et al. "Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response" . | OPTIK 243 (2021) . |
| APA | Zhang, H. , Deng, J. X. , Zhang, Q. , Wang, X. L. , Meng, J. H. , Xu, Z. Y. et al. Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response . | OPTIK , 2021 , 243 . |
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摘要 ：
Surface segregation constitutes an efficient approach to enhance the alkaline hydrogen evolution reaction (HER) activity of bimetallic PtxNiy nanoalloys. Herein, a new strategy is proposed by utilizing the small gas molecule of H2 as the structure directing agent (SDA) to in situ induce Pt surface segregations over a series of PtNi5-n samples with extremely low Pt doping (Pt/Ni = 0.2). Impressively, the sample of PtNi5-0.3 synthesized under 0.3 MPa H2 delivers an extremely low overpotential of 26.8 mV (−10 mA cm−2) and Tafel slope of 19.2 mV dec−1, which is superior to most of the previously reported PtxNiy electrocatalysts. This is substantially related to the strong H2 in situ inducing effect to generate Pt-rich@Ni-rich core-shell nanostructure of PtNi5-0.3 with an ultrahigh Pt surface content of 46%. The specific mechanistic effects of H2 during the PtNi5-n synthesis process are well illustrated based on the combined experimental and theoretical studies. The density functional theory mechanism simulations further unravel that the evolved active site of PtNi5-n can efficiently reduce the reaction Gibbs free energies; especially for the scenario of PtNi5-0.3, the downward-shifted d band center of the Pt active site significantly reduces the Pt-H bond strength, eventually resulting in the lowest absolute value of ΔGH. © 2021 Wiley-VCH GmbH
关键词 ：
Binary alloys Binary alloys Density functional theory Density functional theory Electrocatalysts Electrocatalysts Gibbs free energy Gibbs free energy Hydrogen evolution reaction Hydrogen evolution reaction Platinum Platinum Surface segregation Surface segregation
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| GB/T 7714 | Zhang, Cong , Liang, Xin , Xu, Ruinian et al. H2 In Situ Inducing Strategy on Pt Surface Segregation Over Low Pt Doped PtNi5 Nanoalloy with Superhigh Alkaline HER Activity [J]. | Advanced Functional Materials , 2021 , 31 (14) . |
| MLA | Zhang, Cong et al. "H2 In Situ Inducing Strategy on Pt Surface Segregation Over Low Pt Doped PtNi5 Nanoalloy with Superhigh Alkaline HER Activity" . | Advanced Functional Materials 31 . 14 (2021) . |
| APA | Zhang, Cong , Liang, Xin , Xu, Ruinian , Dai, Chengna , Wu, Bin , Yu, Gangqiang et al. H2 In Situ Inducing Strategy on Pt Surface Segregation Over Low Pt Doped PtNi5 Nanoalloy with Superhigh Alkaline HER Activity . | Advanced Functional Materials , 2021 , 31 (14) . |
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摘要 ：
Hall-effect in semiconductors has wide applications for magnetic field sensing. Yet, a standard Hall sensor retains two problems: its linearity is affected by the non-uniformity of the current distribution; the sensitivity is bias-dependent, with linearity decreasing with increasing bias current. In order to improve the performance, we here propose a novel structure which realizes bias-free, photo-induced Hall sensors. The system consists of a semi-transparent metal Pt and a semiconductor Si or GaAs to form a Schottky contact. We systematically compared the photo-induced Schottky behaviors and Hall effects without net current flowing, depending on various magnetic fields, light intensities and wavelengths of Pt/GaAs and Pt/Si junctions. The electrical characteristics of the Schottky photo-diodes were fitted to obtain the barrier height as a function of light intensity. We show that the open-circuit Hall voltage of Pt/GaAs junction is orders of magnitude lower than that of Pt/Si, and the barrier height of GaAs is smaller. It should be attributed to the surface states in GaAs which block the carrier drifting. This work not only realizes the physical investigations of photo-induced Hall effects in Pt/GaAs and Pt/Si Schottky junctions, but also opens a new pathway for bias-free magnetic sensing with high linearity and sensitivity comparing to commercial Hall-sensors.
关键词 ：
barrier height barrier height magnetic sensor magnetic sensor photo-induced Hall effect photo-induced Hall effect Schottky junction Schottky junction
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| GB/T 7714 | Wang Xiaolei , Sun Xupeng , Cui Shuainan et al. Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions. [J]. | Sensors , 2021 , 21 (9) . |
| MLA | Wang Xiaolei et al. "Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions." . | Sensors 21 . 9 (2021) . |
| APA | Wang Xiaolei , Sun Xupeng , Cui Shuainan , Yang Qianqian , Zhai Tianrui , Zhao Jinliang et al. Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions. . | Sensors , 2021 , 21 (9) . |
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摘要 ：
Topological Weyl semimetals have attracted considerable interest because they manifest underlying physics and device potential in spintronics. Large anomalous Hall effect (AHE) in non-collinear antiferromagnets (AFMs) represents a striking Weyl phase, which is associated with Bloch-band topological features. In this work, we report robust AHE and Lifshitz transition in high-quality Weyl semimetal Mn3Ge thin film, comprising stacked Kagome lattice and chiral antiferromagnetism. We successfully achieved giant AHE in our Mn3Ge film, with a strong Berry curvature enhanced by the Weyl phase. The enormous coercive field HC in our AHE curve at 5 K reached an unprecedented 5.3 T among hexagonal Mn3X systems. Our results provide direct experimental evidence of an electronic topological transition in the chiral AFMs. The temperature was demonstrated to play an efficient role in tuning the carrier concentration, which could be quantitatively determined by the two-band model. The electronic band structure crosses the Fermi energy level and leads to the reversal of carrier type around 50 K. The results not only offer new functionality for effectively modulating the Fermi level location in topological Weyl semimetals but also present a promising route of manipulating the carrier concentration in antiferromagnetic spintronic devices.
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| GB/T 7714 | Wang Xiaolei , Pan Dong , Zeng Qingqi et al. Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge. [J]. | Nanoscale , 2021 , 13 (4) : 2601-2608 . |
| MLA | Wang Xiaolei et al. "Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge." . | Nanoscale 13 . 4 (2021) : 2601-2608 . |
| APA | Wang Xiaolei , Pan Dong , Zeng Qingqi , Chen Xue , Wang Hailong , Zhao Duo et al. Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge. . | Nanoscale , 2021 , 13 (4) , 2601-2608 . |
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摘要 ：
The shape-function relationship for designing catalysts is always a focus to study. This article describes the influence of Ni catalysts surface structure on acetone hydrogenation. We report H-2 as a morphology-directing agent to selectively synthesize branched Ni (Ni-BN), which exposes substantial stepped Ni(3 2 2) facet (similar to 99%) that has elegant activity for acetone hydrogenation. In contrary, Ni nanoparticle (Ni-NP) prepared without H-2 mainly exposes flat Ni(1 1 1) and Ni(1 0 0) facets and these facets perform less activity for acetone hydrogenation to isopropanol. Subsequently, DFT studies of reaction mechanism on different facets reveal that the step site in Ni(3 2 2) facet displays lower activation barriers than that of Ni(1 1 1) and Ni(1 0 0) facets. With help of kinetic growth model and microkinetics study, quantitative shape-function relationship of Ni-BN for acetone hydrogenation to isopropanol can be further established. This work not only clarifies the catalytic activity of Ni on acetone hydrogenation but also provides a method accessing the intrinsic kinetics of the reaction.
关键词 ：
Acetone hydrogenation Acetone hydrogenation Branched nickel Branched nickel H-2 self-select H-2 self-select High-index facet High-index facet Shape-function relationship Shape-function relationship
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| GB/T 7714 | Wang, Xiaolei , Liu, Ning , Xu, Ruinian et al. Insights into the shape effect of H-2 self-selective Ni catalysts for efficient acetone hydrogenation [J]. | APPLIED SURFACE SCIENCE , 2021 , 536 . |
| MLA | Wang, Xiaolei et al. "Insights into the shape effect of H-2 self-selective Ni catalysts for efficient acetone hydrogenation" . | APPLIED SURFACE SCIENCE 536 (2021) . |
| APA | Wang, Xiaolei , Liu, Ning , Xu, Ruinian , Chen, Biaohua , Dai, Chengna , Wu, Bin et al. Insights into the shape effect of H-2 self-selective Ni catalysts for efficient acetone hydrogenation . | APPLIED SURFACE SCIENCE , 2021 , 536 . |
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摘要 ：
Among the efforts to improve the performances of microlasers, optimization of the gain properties and cavity parameters of these lasers has attracted significant attention recently. Distributed feedback lasers, as one of the most promising candidate technologies for electrically pumped microlasers, can be combined with dual-gratings. This combination provides additional freedom for the design of the laser cavity. Here, a holographic dual-grating is designed to improve the distributed feedback laser performance. The holographic dual-grating laser consists of a colloidal quantum dot film with two parallel gratings, comprising first-order (210 nm) and second-order (420 nm) gratings that can be fabricated easily using a combination of spin coating and interference lithography. The feedback and the output from the cavity are controlled using the first-order grating and the second-order grating, respectively. Through careful design and analysis of the dual-grating, a balance is achieved between the feedback and the cavity output such that the lasing threshold based on the dual-grating is nearly half the threshold of conventional distributed feedback lasers. Additionally, the holographic dual-grating laser shows a high level of stability because of the high stability of the colloidal quantum dots against photobleaching.
关键词 ：
dual-gratings dual-gratings holographic holographic microlasers microlasers
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| GB/T 7714 | Zhai, Tianrui , Han, Liang , Ma, Xiaojie et al. Low-Threshold Microlasers Based on Holographic Dual-Gratings [J]. | NANOMATERIALS , 2021 , 11 (6) . |
| MLA | Zhai, Tianrui et al. "Low-Threshold Microlasers Based on Holographic Dual-Gratings" . | NANOMATERIALS 11 . 6 (2021) . |
| APA | Zhai, Tianrui , Han, Liang , Ma, Xiaojie , Wang, Xiaolei . Low-Threshold Microlasers Based on Holographic Dual-Gratings . | NANOMATERIALS , 2021 , 11 (6) . |
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摘要 ：
Because of its limited light field mode and high Q value, the whispering-gallery-mode (WGM) cavity has been widely studied. In this study, we propose a simple, rapid, low-cost and no-manufacturing technology method that we call the drip-coating method to obtain an irregular cavity with arbitrary boundaries. By using polyvinyl alcohol (PVA) solution doped with rhodamine 6G, the irregular cavity with arbitrary boundaries was drip-coated on a high-reflection mirror, forming a WGM laser. The sample was pumped with a 532 nm pulsed laser, and the single-mode WGM and multi-WGM lasing were obtained. All WGMs are the vertical oscillation modes, which originate from both the total internal reflection of the PVA/air interface and vertical reflection of the PVA/mirror interface. The other boundaries of the cavity were not involved in the reflection and could have any shape. The mechanism of producing single-mode lasing is due to the action of the loss-gain cavity. Multi-WGM lasing is attributed to at least two groups of different WGMs existing in an irregular cavity. This can be confirmed by using a microsphere model and intensity correlation method. These results may provide an alternative for the design of WGM lasers.
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| GB/T 7714 | Su, Dan , Zhai, Tianrui , Ge, Kun et al. WGM lasing in irregular cavities with arbitrary boundaries [J]. | NANOSCALE , 2021 , 13 (43) : 18349-18355 . |
| MLA | Su, Dan et al. "WGM lasing in irregular cavities with arbitrary boundaries" . | NANOSCALE 13 . 43 (2021) : 18349-18355 . |
| APA | Su, Dan , Zhai, Tianrui , Ge, Kun , Zhang, Shuai , Xu, Zhiyang , Tong, Junhua et al. WGM lasing in irregular cavities with arbitrary boundaries . | NANOSCALE , 2021 , 13 (43) , 18349-18355 . |
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摘要 ：
Recent optical stimulation suggests a vital non-contact pathway to manipulate both macroscopic and microscopic ferroelectric properties and paves the foundation for optoelectronics devices. However, up to date, most optical-related manipulation of ferroelectric properties is restricted due to their intrinsic bandgap and limited visible light spectrum absorption. Here, we reveal non-oxide Sn2P2S6 single crystal possesses full-visible-spectrum absorption (from 300 to 800 nm) with a unique disproportionation mechanism of photoexcited Sn ions and Urbach tail, which is not contradicting to the intrinsic band gap. Interestingly, we observed the existence of conductive domain walls (c-DW) and the light illumination induced significant enhancement of the domain wall conductivity caused by such disproportionation reaction. In addition, the domains separated by c-DW also exhibited noticeable electrical conductivity difference in the presence of optical illumination owing to the interfacial polarization charge with opposite signs. The result provides a novel opportunity for understanding the electrical conductivity behavior of the domains and domain walls in ferroelectrics with full-visible-spectrum absorption and achieving greatly enhanced performances for optoelectronics.
关键词 ：
conductive domain walls conductive domain walls ferroelectricity ferroelectricity full-visible-spectrum absorption full-visible-spectrum absorption Sn2P2S6 Sn2P2S6
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| GB/T 7714 | Deng, Jianming , Jiang, Xing'an , Liu, Yanyu et al. Enhanced domain wall conductivity in photosensitive ferroelectrics Sn2P2S6 with full-visible-spectrum absorption [J]. | SCIENCE CHINA-MATERIALS , 2021 . |
| MLA | Deng, Jianming et al. "Enhanced domain wall conductivity in photosensitive ferroelectrics Sn2P2S6 with full-visible-spectrum absorption" . | SCIENCE CHINA-MATERIALS (2021) . |
| APA | Deng, Jianming , Jiang, Xing'an , Liu, Yanyu , Zhao, Wei , Tang, Gang , Li, Yun et al. Enhanced domain wall conductivity in photosensitive ferroelectrics Sn2P2S6 with full-visible-spectrum absorption . | SCIENCE CHINA-MATERIALS , 2021 . |
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