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学者姓名：冯士维
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摘要 ：
一种用于异构工件钎焊缺陷检测的热阻测试装置与方法属于电子工程学领域，该方法主要通过电学参数法实现对异构工件的钎焊缺陷进行无损检测，根据四通道钎焊热阻测试仪测试的热阻大小和所提出的钎焊评估算法以区分不同工件钎焊层的钎焊质量。通过对测温探头施加功率，热量流经测试工件内部直至散热平台，经过数据分析软件中的结构函数法将整个瞬态温升曲线转化为不同材料的热阻构成。通过移动测温探头的位置，对待测工件整体完成扫描式热阻测试，对同一工件的所有采样点进行耦合热阻计算，得到不同工件的有效面积比Q值以区分钎焊层钎焊质量的优劣。该方法通过计算机可实现完全程控计算，能够对异构工件的钎焊层质量实现有效表征。
引用：
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| GB/T 7714 | 冯士维 , 胡朝旭 , 何鑫 et al. 一种用于异构工件钎焊缺陷检测的热阻测试装置与方法 : CN202110045200.9[P]. | 2021-01-14 . |
| MLA | 冯士维 et al. "一种用于异构工件钎焊缺陷检测的热阻测试装置与方法" : CN202110045200.9. | 2021-01-14 . |
| APA | 冯士维 , 胡朝旭 , 何鑫 , 白昆 . 一种用于异构工件钎焊缺陷检测的热阻测试装置与方法 : CN202110045200.9. | 2021-01-14 . |
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摘要 ：
Traditional brazing quality inspection methods find it difficult to detect brazing layer defects on heteromorphic workpieces. Thus, a non-destructive testing technology based on a thermal probe is developed in this work. Scanning thermal resistance testing and analysis are carried out for two types of workpiece samples with different structures, and an evaluation calculation method is proposed to effectively characterize the brazing effect of the workpiece. By comparison with standard workpieces, qualified brazing layer products can be selected. In addition, the feasibility of this method is verified by ANSYS thermal simulations. In comparison with the x ray, it also has shown the superiority of this method. Experimental results show that this method can effectively evaluate the brazing layer quality of workpieces with heteromorphic and complex structures, and the reliability of the workpiece is further improved. Published under an exclusive license by AIP Publishing.
引用：
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| GB/T 7714 | Hu, Chaoxu , Feng, Shiwei , Zhang, Yamin et al. A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe [J]. | REVIEW OF SCIENTIFIC INSTRUMENTS , 2021 , 92 (8) . |
| MLA | Hu, Chaoxu et al. "A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe" . | REVIEW OF SCIENTIFIC INSTRUMENTS 92 . 8 (2021) . |
| APA | Hu, Chaoxu , Feng, Shiwei , Zhang, Yamin , He, Xin , Bai, Kun , Wang, Sheng et al. A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe . | REVIEW OF SCIENTIFIC INSTRUMENTS , 2021 , 92 (8) . |
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摘要 ：
Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are susceptible to unexpected short-circuit (SC) impacts in high-voltage inverters operating in complex applications. This paper presents a research on the effect of high-side blocking and classical low-side blocking on short circuit characteristics. Simulation of the steady-state electric field, which equivalent to the states after LSB and HSB, was performed. The obvious electric field concentration appears in the source-drain pn junction of the DUT after the LSB, and is much larger in value than that appearing in the DUT after the HSB. DUTs, which failed, were decapsulated from the side of the drain to allow for an emission microscope (EMMI) investigation. In response to the results of the EMMI investigation, it was discussed that the occurrence of source leakage was caused by electric field con-centration after the DUT is blocked. The hazards of this failure and the expected further research are mentioned simply.
关键词 ：
EMMI EMMI Robustness Robustness Short circuit currents Short circuit currents SiC power MOSFETs SiC power MOSFETs
引用：
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| GB/T 7714 | Bai, Kun , Feng, Shiwei , Zheng, Xiang et al. Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET [J]. | MICROELECTRONICS RELIABILITY , 2021 , 123 . |
| MLA | Bai, Kun et al. "Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET" . | MICROELECTRONICS RELIABILITY 123 (2021) . |
| APA | Bai, Kun , Feng, Shiwei , Zheng, Xiang , He, Xin , Pan, Shijie , Li, Xuan . Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET . | MICROELECTRONICS RELIABILITY , 2021 , 123 . |
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摘要 ：
Digital sensor arrays based on ring oscillators are used to monitor the temperature of Field Programmable Gate Array (FPGA) chips, but traditional sensor structures using binary frequency counters consume excessive hardware logic resources. This paper proposed a compact temperature sensor array that used low-decoding-complexity linear feedback shift registers (LFSR) as a frequency counter to efficiently count the ring oscillator frequency. We implemented an experimental system on a Spartan-6 FPGA, and the logic resource consumption of the entire system was 927 Look-Up-Tables (LUTs) with an overhead of only 10%. The single sampling time was approximately 40 μs. The proposed temperature sensor array has good temperature sensing capabilities, and the measured error is ±0.9°C(3σ). © 2021 Elsevier Ltd
关键词 ：
Computer circuits Computer circuits Field programmable gate arrays (FPGA) Field programmable gate arrays (FPGA) Logic gates Logic gates Shift registers Shift registers Table lookup Table lookup Temperature sensors Temperature sensors
引用：
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| GB/T 7714 | Wang, Sheng , Feng, Shiwei , Xiao, Yuxuan et al. Build-in compact and efficient temperature sensor array on field programmable gate array [J]. | Microelectronics Journal , 2021 , 111 . |
| MLA | Wang, Sheng et al. "Build-in compact and efficient temperature sensor array on field programmable gate array" . | Microelectronics Journal 111 (2021) . |
| APA | Wang, Sheng , Feng, Shiwei , Xiao, Yuxuan , Hu, Chaoxu , Pan, Shijie . Build-in compact and efficient temperature sensor array on field programmable gate array . | Microelectronics Journal , 2021 , 111 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
The effects of gamma irradiation on the electrical and trapping properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) are investigated in detail. During the irradiation, the gate-source leakage current of the HEMT is monitored online when applying a reverse gate voltage. The variations of electrical properties of the device, including an increase in drain-source current, the negative threshold voltage shift, and a decrease of leakage current, are observed. In particular, three traps in the device are identified using the voltage-transient method and the variations of these traps after irradiation are also investigated. The results show that the absolute amplitudes of the three traps in the device decrease after irradiation, which indicates a reduction in the density of the traps. Furthermore, it is proposed that the time constants and energy levels of the three traps decrease after irradiation. The observed changes in the trapping behaviors are ascribed to the structural ordering of the defects, which is consistent with the improvement in the electrical characteristics of the device.
关键词 ：
gallium nitride (GaN) gallium nitride (GaN) gamma irradiation gamma irradiation high-electron-mobility transistors (HEMTs) high-electron-mobility transistors (HEMTs) trap trap voltage-transient method voltage-transient method
引用：
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| GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method [J]. | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2021 , 36 (9) . |
| MLA | Pan, Shijie et al. "Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method" . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY 36 . 9 (2021) . |
| APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Zheng, Xiang , Lu, Xiaozhuang , Hu, Chaoxu et al. Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2021 , 36 (9) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
The effects of high-energy (1 MeV) electron irradiation on the electrical and trapping properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) are investigated systematically. When the irradiation fluence increases from 5 x 10(12)/cm(2) to 1 x 10(14)/cm(2), the drain-source current also increases and the threshold voltage shifts toward the negative direction. A Raman spectroscopy study shows that electron irradiation induces strain relaxation in the HEMT, which results in an improvement in the device's electrical characteristics. In particular, three traps in the device are identified using the voltage-transient method and the trapping effects in the HEMT are investigated after the final irradiation. When compared with the transient voltages during the pristine stage, the absolute amplitudes of the three traps in the device decrease after irradiation, which indicates a reduction in the density of the traps. Furthermore, it is proposed that the time constants of the three traps increase while the energy levels remain unchanged, which is ascribed to the strain relaxation and the structural ordering of the defects after electron irradiation. The observed changes in the trapping behaviors are consistent with the improvement in the electrical properties of the device and the shift in the Raman spectra.
关键词 ：
Electron irradiation Electron irradiation gallium nitride (GaN) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) high-electron-mobility transistors (HEMTs) Raman spectra Raman spectra voltage-transientmethod voltage-transientmethod
引用：
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| GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2021 , 68 (8) : 3968-3973 . |
| MLA | Pan, Shijie et al. "Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 68 . 8 (2021) : 3968-3973 . |
| APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Zheng, Xiang , Lu, Xiaozhuang , Hu, Chaoxu et al. Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2021 , 68 (8) , 3968-3973 . |
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摘要 ：
The degradation mechanism of 808nm GaAs-based high-power laser diode bars (LDBs) with 6 single laser diodes was investigated using infrared thermography and photoemission microscopy. Over time, measurements of output power indicated that one of the 6 laser bars had a serious degradation of output power. Infrared imaging and photoemission microscopy revealed that solder voids during packaging resulted in premature failure due to high temperatures in the lasing region. The current reliability of LDB devices is compromised by these packaging defects. © 2020 IEEE.
关键词 ：
III-V semiconductors III-V semiconductors Degradation Degradation Semiconducting gallium Semiconducting gallium Gallium arsenide Gallium arsenide Thermography (imaging) Thermography (imaging) High power lasers High power lasers Semiconductor lasers Semiconductor lasers Photoemission Photoemission Diodes Diodes
引用：
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| GB/T 7714 | Hao, Tieying , Feng, Shiwei , Zheng, Xiang et al. The study of temperature-dependent degradation of optical output on 808 nm GaAs-based high-power laser diode bars [C] . 2020 : 121-124 . |
| MLA | Hao, Tieying et al. "The study of temperature-dependent degradation of optical output on 808 nm GaAs-based high-power laser diode bars" . (2020) : 121-124 . |
| APA | Hao, Tieying , Feng, Shiwei , Zheng, Xiang , Bai, Kun . The study of temperature-dependent degradation of optical output on 808 nm GaAs-based high-power laser diode bars . (2020) : 121-124 . |
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摘要 ：
Power semiconductor devices usually work under high current or high power. When the junction temperature of the device exceeds its allowable range, it will cause thermal damage to the device. The power cycle test is one of the reliability assessment tests. When only the characteristics of PN junction in the off-state of the device are used to measure the junction temperature, the maximum junction temperature of the device in the on-state in actual work cannot be measured in real time. The research in this paper developed a power cycle test equipment for VDMOS by using the corresponding relationship among drain¬source current, drain-source voltage and junction temperature in the on-state, combined with the off-state measurement method. This test equipment is mainly used for VDMOS working under high current, measuring and controlling the junction temperature of the device under test in real time when the device is on or off. © 2020 IEEE.
关键词 ：
Drain current Drain current Equipment testing Equipment testing Semiconductor junctions Semiconductor junctions
引用：
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| GB/T 7714 | Wei, Hang , Guo, Chunsheng , Guo, Hao et al. Real-time measurement and control of junction temperature of VDMOS in power cycle test [C] . 2020 : 676-679 . |
| MLA | Wei, Hang et al. "Real-time measurement and control of junction temperature of VDMOS in power cycle test" . (2020) : 676-679 . |
| APA | Wei, Hang , Guo, Chunsheng , Guo, Hao , Bai, Kun , Feng, Shiwei . Real-time measurement and control of junction temperature of VDMOS in power cycle test . (2020) : 676-679 . |
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摘要 ：
本发明公开了一种大功率模块内部多芯片温度分布均匀性的评测方法，首先在不同测试电流下建立校温曲线库；其次，基于校温曲线，在不同的测试电流下，测得多个温度值；再次，计算不同测试电流测的温度之间的差值；最后，根据温度阈值与所测温度差值对比，即可在不破坏模块封装的情况下判别模块的温度分布情况。避免了在实际工程中无法判别模块内部温度分布均匀程度是否可以达标的问题。
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| GB/T 7714 | 郭春生 , 赵迪 , 魏磊 et al. 一种大功率模块内部多芯片温度分布均匀性的评测方法 : CN202011419790.9[P]. | 2020-12-06 . |
| MLA | 郭春生 et al. "一种大功率模块内部多芯片温度分布均匀性的评测方法" : CN202011419790.9. | 2020-12-06 . |
| APA | 郭春生 , 赵迪 , 魏磊 , 张仕炜 , 冯士维 , 朱慧 . 一种大功率模块内部多芯片温度分布均匀性的评测方法 : CN202011419790.9. | 2020-12-06 . |
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摘要 ：
Changes in both surface morphology and transient reflectance on the front facet of a diode laser are monitored during a catastrophic optical damage (COD) process in a single pulse operation. Use of a 1550 nm time-resolved micro-reflectance optical system (with time resolution of similar to 4 ns) allows us to monitor the creation sequences of up to four distinct COD seed points on an 808 nm laser facet within a period of < 4 mu s. Further, this system can even reveal the formation process of the first degradation point, which was created within 20 ns. Creation of nonplanar facet areas by local melting represents the main mechanism behind the observed changes in reflectivity.
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| GB/T 7714 | Hao, Tieying , Feng, Shiwei , Zheng, Xiang et al. Monitoring of defects creation sequence in 808 nm laser diode by reflectance analysis [J]. | MICROELECTRONICS RELIABILITY , 2020 , 110 . |
| MLA | Hao, Tieying et al. "Monitoring of defects creation sequence in 808 nm laser diode by reflectance analysis" . | MICROELECTRONICS RELIABILITY 110 (2020) . |
| APA | Hao, Tieying , Feng, Shiwei , Zheng, Xiang , Bai, Kun . Monitoring of defects creation sequence in 808 nm laser diode by reflectance analysis . | MICROELECTRONICS RELIABILITY , 2020 , 110 . |
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