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学者姓名：冯士维
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摘要 ：
This paper presents a detailed investigation of trapping effect in AlGaN/GaN high-electron-mobility transistors based on the pulsed current-voltage characterization, drain voltage transient (DVT) measurement, and capacitance deep-level transient spectroscopy (C-DLTS). By monitoring the DVTs at various filling voltages and temperatures, the properties of three electron traps were obtained with the DVT measurements. Specifically, the energy levels of the former two traps were determined to be 0.28 and 0.48 eV, which was confirmed by the C-DLTS measurement performed on the same device. In addition, a third temperature-independent trap located in the GaN buffer was observed only with the DVT measurement, indicating the advantage of transient curves measurement in characterizing the traps insensitive to temperature. The combined measurements demonstrate the correlation of different techniques, which allows identifying the same trap levels to investigate the physical origin of traps.
关键词 ：
gallium nitride (GaN) gallium nitride (GaN) drain voltage transients (DVTs) drain voltage transients (DVTs) high-electron-mobility transistors (HEMTs) high-electron-mobility transistors (HEMTs) trap trap capacitance deep-level transient spectroscopy (C-DLTS) capacitance deep-level transient spectroscopy (C-DLTS)
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| GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy [J]. | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2022 , 37 (9) . |
| MLA | Pan, Shijie et al. "Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy" . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY 37 . 9 (2022) . |
| APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Bai, Kun , Lu, Xiaozhuang , Zhang, Yamin et al. Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2022 , 37 (9) . |
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摘要 ：
一种用于异构工件钎焊缺陷检测的热阻测试装置与方法属于电子工程学领域，该方法主要通过电学参数法实现对异构工件的钎焊缺陷进行无损检测，根据四通道钎焊热阻测试仪测试的热阻大小和所提出的钎焊评估算法以区分不同工件钎焊层的钎焊质量。通过对测温探头施加功率，热量流经测试工件内部直至散热平台，经过数据分析软件中的结构函数法将整个瞬态温升曲线转化为不同材料的热阻构成。通过移动测温探头的位置，对待测工件整体完成扫描式热阻测试，对同一工件的所有采样点进行耦合热阻计算，得到不同工件的有效面积比Q值以区分钎焊层钎焊质量的优劣。该方法通过计算机可实现完全程控计算，能够对异构工件的钎焊层质量实现有效表征。
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| GB/T 7714 | 冯士维 , 胡朝旭 , 何鑫 et al. 一种用于异构工件钎焊缺陷检测的热阻测试装置与方法 : CN202110045200.9[P]. | 2021-01-14 . |
| MLA | 冯士维 et al. "一种用于异构工件钎焊缺陷检测的热阻测试装置与方法" : CN202110045200.9. | 2021-01-14 . |
| APA | 冯士维 , 胡朝旭 , 何鑫 , 白昆 . 一种用于异构工件钎焊缺陷检测的热阻测试装置与方法 : CN202110045200.9. | 2021-01-14 . |
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摘要 ：
Digital sensor arrays based on ring oscillators are used to monitor the temperature of Field Programmable Gate Array (FPGA) chips, but traditional sensor structures using binary frequency counters consume excessive hardware logic resources. This paper proposed a compact temperature sensor array that used low-decoding-complexity linear feedback shift registers (LFSR) as a frequency counter to efficiently count the ring oscillator frequency. We implemented an experimental system on a Spartan-6 FPGA, and the logic resource consumption of the entire system was 927 Look-Up-Tables (LUTs) with an overhead of only 10%. The single sampling time was approximately 40 μs. The proposed temperature sensor array has good temperature sensing capabilities, and the measured error is ±0.9°C(3σ). © 2021 Elsevier Ltd
关键词 ：
Computer circuits Computer circuits Field programmable gate arrays (FPGA) Field programmable gate arrays (FPGA) Logic gates Logic gates Shift registers Shift registers Table lookup Table lookup Temperature sensors Temperature sensors
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| GB/T 7714 | Wang, Sheng , Feng, Shiwei , Xiao, Yuxuan et al. Build-in compact and efficient temperature sensor array on field programmable gate array [J]. | Microelectronics Journal , 2021 , 111 . |
| MLA | Wang, Sheng et al. "Build-in compact and efficient temperature sensor array on field programmable gate array" . | Microelectronics Journal 111 (2021) . |
| APA | Wang, Sheng , Feng, Shiwei , Xiao, Yuxuan , Hu, Chaoxu , Pan, Shijie . Build-in compact and efficient temperature sensor array on field programmable gate array . | Microelectronics Journal , 2021 , 111 . |
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摘要 ：
The effects of high-energy (1 MeV) electron irradiation on the electrical and trapping properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) are investigated systematically. When the irradiation fluence increases from 5 x 10(12)/cm(2) to 1 x 10(14)/cm(2), the drain-source current also increases and the threshold voltage shifts toward the negative direction. A Raman spectroscopy study shows that electron irradiation induces strain relaxation in the HEMT, which results in an improvement in the device's electrical characteristics. In particular, three traps in the device are identified using the voltage-transient method and the trapping effects in the HEMT are investigated after the final irradiation. When compared with the transient voltages during the pristine stage, the absolute amplitudes of the three traps in the device decrease after irradiation, which indicates a reduction in the density of the traps. Furthermore, it is proposed that the time constants of the three traps increase while the energy levels remain unchanged, which is ascribed to the strain relaxation and the structural ordering of the defects after electron irradiation. The observed changes in the trapping behaviors are consistent with the improvement in the electrical properties of the device and the shift in the Raman spectra.
关键词 ：
Electron irradiation Electron irradiation gallium nitride (GaN) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) high-electron-mobility transistors (HEMTs) Raman spectra Raman spectra voltage-transientmethod voltage-transientmethod
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| GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2021 , 68 (8) : 3968-3973 . |
| MLA | Pan, Shijie et al. "Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 68 . 8 (2021) : 3968-3973 . |
| APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Zheng, Xiang , Lu, Xiaozhuang , Hu, Chaoxu et al. Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2021 , 68 (8) , 3968-3973 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
The effects of gamma irradiation on the electrical and trapping properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) are investigated in detail. During the irradiation, the gate-source leakage current of the HEMT is monitored online when applying a reverse gate voltage. The variations of electrical properties of the device, including an increase in drain-source current, the negative threshold voltage shift, and a decrease of leakage current, are observed. In particular, three traps in the device are identified using the voltage-transient method and the variations of these traps after irradiation are also investigated. The results show that the absolute amplitudes of the three traps in the device decrease after irradiation, which indicates a reduction in the density of the traps. Furthermore, it is proposed that the time constants and energy levels of the three traps decrease after irradiation. The observed changes in the trapping behaviors are ascribed to the structural ordering of the defects, which is consistent with the improvement in the electrical characteristics of the device.
关键词 ：
gamma irradiation gamma irradiation voltage-transient method voltage-transient method gallium nitride (GaN) gallium nitride (GaN) trap trap high-electron-mobility transistors (HEMTs) high-electron-mobility transistors (HEMTs)
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| GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method [J]. | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2021 , 36 (9) . |
| MLA | Pan, Shijie et al. "Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method" . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY 36 . 9 (2021) . |
| APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Zheng, Xiang , Lu, Xiaozhuang , Hu, Chaoxu et al. Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2021 , 36 (9) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
The temperature and thermal resistance of Ga2O3 Schottky barrier diodes were investigated using electrical methods with temperature-sensitive electrical parameters and the structure function method. The analysis was based on the voltage of the Schottky junction as a temperature-sensitive parameter so as to measure the junction temperature of Ga2O3 Schottky barrier diodes. The junction-case thermal resistance of the Ga2O3 Schottky barrier diodes was accurately extracted by the transient dual interface test method to be 39.04 degrees C W-1, which increased slightly with the increase of power current. In addition, the temperature extracted with the electrical method was compared with the result of infrared measurements, which indicated that the temperature extracted with the infrared was significantly higher than the result of the electrical method. This difference can be explained in that the temperature extracted by the electrical method was the temperature of the active region of the device, whereas the result of infrared presented the maximum temperature of the device. Furthermore, the low thermal conductivity of Ga2O3 resulted in temperature inhomogeneity on the device surface and further increased the temperature difference. This study provides a convenient and non-destructive method for rapid measurement of the thermal characteristics of the Ga2O3 Schottky barrier diodes, and enables rapid evaluation of the whole thermal system.
关键词 ：
thermal resistance thermal resistance Ga2O3 Schottky barrier diode (SBD) Ga2O3 Schottky barrier diode (SBD) temperature measurement temperature measurement temperature-sensitive electrical parameter (TSEP) temperature-sensitive electrical parameter (TSEP)
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| GB/T 7714 | Li, Xuan , Feng, Shiwei , Feng, Zhihong et al. Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters [J]. | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2021 , 36 (11) . |
| MLA | Li, Xuan et al. "Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters" . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY 36 . 11 (2021) . |
| APA | Li, Xuan , Feng, Shiwei , Feng, Zhihong , Lv, Yuanjie , Wang, Yuangang , He, Xin et al. Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2021 , 36 (11) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Traditional brazing quality inspection methods find it difficult to detect brazing layer defects on heteromorphic workpieces. Thus, a non-destructive testing technology based on a thermal probe is developed in this work. Scanning thermal resistance testing and analysis are carried out for two types of workpiece samples with different structures, and an evaluation calculation method is proposed to effectively characterize the brazing effect of the workpiece. By comparison with standard workpieces, qualified brazing layer products can be selected. In addition, the feasibility of this method is verified by ANSYS thermal simulations. In comparison with the x ray, it also has shown the superiority of this method. Experimental results show that this method can effectively evaluate the brazing layer quality of workpieces with heteromorphic and complex structures, and the reliability of the workpiece is further improved. Published under an exclusive license by AIP Publishing.
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| GB/T 7714 | Hu, Chaoxu , Feng, Shiwei , Zhang, Yamin et al. A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe [J]. | REVIEW OF SCIENTIFIC INSTRUMENTS , 2021 , 92 (8) . |
| MLA | Hu, Chaoxu et al. "A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe" . | REVIEW OF SCIENTIFIC INSTRUMENTS 92 . 8 (2021) . |
| APA | Hu, Chaoxu , Feng, Shiwei , Zhang, Yamin , He, Xin , Bai, Kun , Wang, Sheng et al. A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe . | REVIEW OF SCIENTIFIC INSTRUMENTS , 2021 , 92 (8) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
In this work, we developed the voltage-transient method to characterize the properties of traps in AlGaN/GaN high-electron-mobility transistors (HEMTs) in the OFF-state. By monitoring the drain voltage transients of the HEMTs at various temperatures, three types of trapping mechanism were identified: 1) buffer charge trapping, which occurred on a timescale of approximately 1 ms; 2) charge trapping in the AlGaN layer at the gate-drain edge with the energy level (E-a) of approximately 0.54 eV; and 3) surface charge trapping with E-a of approximately 0.28 eV. In particular, we extracted accurate amplitudes for the first two trapping behaviors and studied the dependence of the trapping effect on the filling bias conditions. The results showed that the buffer charge trapping was primarily affected by the drain voltage, whereas the charge trapping on the drain side of the gate was affected by both the drain and gate voltages; these results were verified by drift-diffusion simulations. In addition, we observed the third trapping behavior, which was apparent in the measurement window beyond 308 K, thus demonstrating the advantages of our method for correctly and effectively monitoring the changes in the peaks in the time constant spectrum.
关键词 ：
Charge trapping Charge trapping high-electron-mobility transistors (HEMTs) high-electron-mobility transistors (HEMTs) differential amplitude spectrum (DAS) differential amplitude spectrum (DAS) voltage transient voltage transient GaN GaN
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| GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2021 , 68 (11) : 5541-5546 . |
| MLA | Pan, Shijie et al. "Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 68 . 11 (2021) : 5541-5546 . |
| APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Zheng, Xiang , Lu, Xiaozhuang , He, Xin et al. Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2021 , 68 (11) , 5541-5546 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are susceptible to unexpected short-circuit (SC) impacts in high-voltage inverters operating in complex applications. This paper presents a research on the effect of high-side blocking and classical low-side blocking on short circuit characteristics. Simulation of the steady-state electric field, which equivalent to the states after LSB and HSB, was performed. The obvious electric field concentration appears in the source-drain pn junction of the DUT after the LSB, and is much larger in value than that appearing in the DUT after the HSB. DUTs, which failed, were decapsulated from the side of the drain to allow for an emission microscope (EMMI) investigation. In response to the results of the EMMI investigation, it was discussed that the occurrence of source leakage was caused by electric field con-centration after the DUT is blocked. The hazards of this failure and the expected further research are mentioned simply.
关键词 ：
Robustness Robustness EMMI EMMI SiC power MOSFETs SiC power MOSFETs Short circuit currents Short circuit currents
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| GB/T 7714 | Bai, Kun , Feng, Shiwei , Zheng, Xiang et al. Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET [J]. | MICROELECTRONICS RELIABILITY , 2021 , 123 . |
| MLA | Bai, Kun et al. "Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET" . | MICROELECTRONICS RELIABILITY 123 (2021) . |
| APA | Bai, Kun , Feng, Shiwei , Zheng, Xiang , He, Xin , Pan, Shijie , Li, Xuan . Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET . | MICROELECTRONICS RELIABILITY , 2021 , 123 . |
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摘要 ：
The degradation mechanism of 808nm GaAs-based high-power laser diode bars (LDBs) with 6 single laser diodes was investigated using infrared thermography and photoemission microscopy. Over time, measurements of output power indicated that one of the 6 laser bars had a serious degradation of output power. Infrared imaging and photoemission microscopy revealed that solder voids during packaging resulted in premature failure due to high temperatures in the lasing region. The current reliability of LDB devices is compromised by these packaging defects. © 2020 IEEE.
关键词 ：
III-V semiconductors III-V semiconductors Degradation Degradation Semiconducting gallium Semiconducting gallium Gallium arsenide Gallium arsenide Thermography (imaging) Thermography (imaging) High power lasers High power lasers Semiconductor lasers Semiconductor lasers Photoemission Photoemission Diodes Diodes
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| GB/T 7714 | Hao, Tieying , Feng, Shiwei , Zheng, Xiang et al. The study of temperature-dependent degradation of optical output on 808 nm GaAs-based high-power laser diode bars [C] . 2020 : 121-124 . |
| MLA | Hao, Tieying et al. "The study of temperature-dependent degradation of optical output on 808 nm GaAs-based high-power laser diode bars" . (2020) : 121-124 . |
| APA | Hao, Tieying , Feng, Shiwei , Zheng, Xiang , Bai, Kun . The study of temperature-dependent degradation of optical output on 808 nm GaAs-based high-power laser diode bars . (2020) : 121-124 . |
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