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学者姓名：张永哲
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摘要 ：
We have demonstrated a highly efficient visible-NIR photodetector based on the interlayer optical transition. Indirect interlayer transitions can occur proved by DFT calculations. In particular, the exciton current is tuned by an external gate field and the cutoff wavelength is increased to 1500 nm. Remarkably, there is a peak of about 2.75 nA at Vg = 5 V around 1075 nm wavelength. Finally, this study on utilizing interlayer excitons for spatially separated electrons and holes in different layers is expected to offer a novel binary and ternary heterojunction device to overcome the limitation of the intrinsic band for high-performance NIR photodetectors.
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| GB/T 7714 | Xu, Guoliang , He, Chao , Shi, Donghong et al. Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction [J]. | SCIENCE CHINA-INFORMATION SCIENCES , 2024 , 67 (3) . |
| MLA | Xu, Guoliang et al. "Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction" . | SCIENCE CHINA-INFORMATION SCIENCES 67 . 3 (2024) . |
| APA | Xu, Guoliang , He, Chao , Shi, Donghong , Liu, Danmin , Deng, Wenjie , Li, Jingzhen et al. Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction . | SCIENCE CHINA-INFORMATION SCIENCES , 2024 , 67 (3) . |
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摘要 ：
Indium arsenide (InAs) nanowires (NWs) show significant advantages in optoelectronic devices due to their excellent electronic and optical properties. While the surface states affect such outstanding properties, and the performance of optoelectronic devices can be further optimized by modulating the surface state. Herein, the adsorption and substitution properties and the optoelectronics response of passivated InAs NWs are studied using first -principles calculations combined with nonequilibrium Green ' s function (NEGF). The results show that O atom adsorption can reduce the band gap and improve infrared absorption of InAs NWs. Meanwhile, for the O atom substitution model, the impurity energy level appears near the Fermi level of InAs NWs, and for a higher concentration O atoms substitution, the semiconduction properties of the InAs NWs are destroyed. We also choose the Au, Cs, Bi, Sn, and Y atoms as decoration atoms to passivate InAs NWs, and compared with the intrinsic InAs NW surface model, the energy bands gap of the metal -atoms adsorption models all show a decreasing trend in addition to Au -atom adsorption, and the absorption coefficients of InAs NWs adsorbed by several atoms such as Cs, Sn, Bi, and Y in the infrared region have redshifts in different degrees. The absorption coefficients of InAs NWs adsorbed by several metal atoms, Sn, Bi, and Y, are higher in the infrared region compared to that of InAs NW adsorbed by O atom. After the screening of materials, we select InAs NWs adsorbed with Cs, Bi, Sn, and Y atoms with good infrared absorption characteristics for the performance study of optoelectronic devices and it is shown that the InAs NW devices with adsorbed Bi and Sn atoms have the optimal performance with low dark current and high photocurrent.
关键词 ：
Density functional theory Density functional theory Nonequilibrium Green 's function Nonequilibrium Green 's function InAs nanowires InAs nanowires Adsorption properties Adsorption properties Optoelectronic properties Optoelectronic properties
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| GB/T 7714 | Li, Qiuyang , Li, Jingzhen , Chen, Haonan et al. The enhancement of infrared characterization of passivated InAs nanowires [J]. | MICRO AND NANOSTRUCTURES , 2024 , 191 . |
| MLA | Li, Qiuyang et al. "The enhancement of infrared characterization of passivated InAs nanowires" . | MICRO AND NANOSTRUCTURES 191 (2024) . |
| APA | Li, Qiuyang , Li, Jingzhen , Chen, Haonan , Zhang, Wenhui , Cao, Shengzhu , Chu, Feihong et al. The enhancement of infrared characterization of passivated InAs nanowires . | MICRO AND NANOSTRUCTURES , 2024 , 191 . |
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摘要 ：
Improving power conversion efficiency (PCE) in photovoltaics has driven innovative approaches in solar cell design and technology. Silicon heterojunction (SHJ) solar cells exhibit advantages in PCE due to their effective passivating contact structures. SHJ-interdigitated back contact (SHJ-IBC) solar cells have the potential to surpass traditional SHJ cells, attributed to their advantage in short-circuit current (JSC). Herein, Silvaco Atlas technology computer-aided design is used to create digital twins of high-efficiency SHJ solar cells with amorphous silicon and nanocrystalline silicon hole selective contact (HSC) layers. Using parameters from digital twins of SHJ solar cells, the practical efficiency limit of SHJ-IBC solar cells is assessed. The results show that SHJ-IBC cells can achieve potential efficiencies of 27.01% with amorphous HSC and 27.38% with nanocrystalline HSC. Further efficiency augmentation to 27.51% can be achieved by narrowing the gap from 80 to 20 mu m. This study not only advances comprehension of SHJ-IBC solar cells but also provides insights into optimizing geometrical configurations for improved performance. The utilization of digital twins provides a valuable tool for predicting and evaluating the performance of SHJ-IBC solar cells, contributing substantively to the ongoing development of high-efficiency photovoltaic technology. A digital twin is a virtual version of a physical object in its digital environment. It benefits from having real-time data, which make it considerably richer for study. Herein, the practical efficiency limit of silicon heterojunction-interdigitated back contact solar cells is evaluated through the creation of digital twins.image (c) 2024 WILEY-VCH GmbH
关键词 ：
contact resistance contact resistance efficiency limits efficiency limits silicon heterojunction solar cells silicon heterojunction solar cells interdigitated back contact-silicon heterojunction solar cells interdigitated back contact-silicon heterojunction solar cells digital twins digital twins
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| GB/T 7714 | Sun, Zhaoqing , Kang, Qian , Li, Jingjie et al. Evaluating the Practical Efficiency Limit of Silicon Heterojunction-Interdigitated Back Contact Solar Cells by Creating Digital Twins of Silicon Heterojunction Solar Cells with Amorphous Silicon and Nanocrystalline Silicon Hole Contact Layers [J]. | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , 2024 , 221 (6) . |
| MLA | Sun, Zhaoqing et al. "Evaluating the Practical Efficiency Limit of Silicon Heterojunction-Interdigitated Back Contact Solar Cells by Creating Digital Twins of Silicon Heterojunction Solar Cells with Amorphous Silicon and Nanocrystalline Silicon Hole Contact Layers" . | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 221 . 6 (2024) . |
| APA | Sun, Zhaoqing , Kang, Qian , Li, Jingjie , Zhou, Shenghou , Fang, Liang , Xu, Xixiang et al. Evaluating the Practical Efficiency Limit of Silicon Heterojunction-Interdigitated Back Contact Solar Cells by Creating Digital Twins of Silicon Heterojunction Solar Cells with Amorphous Silicon and Nanocrystalline Silicon Hole Contact Layers . | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , 2024 , 221 (6) . |
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摘要 ：
Nickel oxide (NiOX) has a crucial role in enhancing the efficiency and stability of p-i-n inverted perovskite solar cells (PSCs), which hold great potential for commercialization. However, improving contact passivation between perovskites and NiOX is a challenge due to a hindered buried interface. In order to address this issue, self-assembled monolayers (SAMs) are introduced as a buffer layer to prevent direct contact and non-radiative recombination. While, the large dipole moment of SAMs increases the work function of NiOX, which is crucial for enhancing hole transport performance, given the low interfacial potential barrier for hole transfer. By a combination of the first-principles calculations, drive-level capacitance profiling, and transient absorption spectrum characterization, the understanding of the ion-dipole interactions and interface passivation mechanism of potassium fluoride (KF) ultra-thin buffer layer between SAMs and perovskites is provided. The efficiency of inverted PSCs as high as 23.25% is obtained, and the unencapsulated devices kept 90% of initial efficiency following 1400 h aging under nitrogen, which demonstrate remarkable long-term stability as well. This novel strategy highlights the significance of SAMs dipole moment at the NiOX/perovskites interface and provides a new approach to address buried interfaces for high-efficiency and long-term stability in inverted PSCs. A new hybrid interface layer, based on an ionic and self-assembled monolayer, strengthens a unidirectional net dipole moment between the hole transport layer and perovskite through ion-dipole interactions between fluorine and 2PACz, which further enhances the charge extraction and reduces the non-radiative recombination rates. In addition, stability is improved owing to the holistic interface passivation of the buried NiOX/perovskite interface. image
关键词 ：
self-assembled monolayer self-assembled monolayer dipole moment dipole moment perovskite solar cells perovskite solar cells work function work function
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| GB/T 7714 | Wang, Shuanglin , Khan, Danish , Zhou, Wencai et al. Ion-Dipole Interaction for Self-Assembled Monolayers: A New Strategy for Buried Interface in Inverted Perovskite Solar Cells [J]. | ADVANCED FUNCTIONAL MATERIALS , 2024 , 34 (27) . |
| MLA | Wang, Shuanglin et al. "Ion-Dipole Interaction for Self-Assembled Monolayers: A New Strategy for Buried Interface in Inverted Perovskite Solar Cells" . | ADVANCED FUNCTIONAL MATERIALS 34 . 27 (2024) . |
| APA | Wang, Shuanglin , Khan, Danish , Zhou, Wencai , Sui, Yujie , Zhang, Tong , Yu, Guoping et al. Ion-Dipole Interaction for Self-Assembled Monolayers: A New Strategy for Buried Interface in Inverted Perovskite Solar Cells . | ADVANCED FUNCTIONAL MATERIALS , 2024 , 34 (27) . |
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摘要 ：
2D materials hold potential for developing low-cost, high-performance broadband polarized infrared photodetectors. However, the development of 2D broadband polarized infrared photodetectors is largely constrained by the fixed bandgap spectral (cutoff wavelength) limitations of available semiconductors. Here, an approach is presented that leverages anisotropic interlayer excitons (IEXs) within a type-II van der Waals heterojunction, achieving polarization photoresponse beyond the intrinsic bandgap spectral limits of its constituent semiconductors. By constructing heterojunctions using CrPS4 and ReS2, a unique type-II band alignment, enabling strong anisotropic optical excitation is achieved through the interlayer sub-bandgap, which is lower than the intrinsic bandgaps of both CrPS4 and ReS2. The heterojunction exhibits a responsivity of 0.3 A W-1 and a polarization ratio of 1.3 at an incident photon energy of 0.8 eV, comparable to naturally anisotropic materials with intrinsic bandgaps. Additionally, the potential of anisotropic IEXs is demonstrated for dual-band polarization detection by introducing a ReS2/CrPS4/MoS2 heterojunctions with distinct inte rlayer sub-bandgaps. This flexible design of IEXs offers a new platform for multi-dimensional optical sensing and on-chip optoelectronic applications.
关键词 ：
polarization detection polarization detection Interlayer excitons Interlayer excitons van der waals heterojunction van der waals heterojunction band alignment band alignment
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| GB/T 7714 | Che, Zelin , Deng, Wenjie , Li, Jingzhen et al. Polarization-Sensitive Momentum-Matching Interlayer Excitons for Infrared Photodetection [J]. | ADVANCED FUNCTIONAL MATERIALS , 2024 . |
| MLA | Che, Zelin et al. "Polarization-Sensitive Momentum-Matching Interlayer Excitons for Infrared Photodetection" . | ADVANCED FUNCTIONAL MATERIALS (2024) . |
| APA | Che, Zelin , Deng, Wenjie , Li, Jingzhen , Zhao, Chen , Wang, Fakun , Wu, Yi et al. Polarization-Sensitive Momentum-Matching Interlayer Excitons for Infrared Photodetection . | ADVANCED FUNCTIONAL MATERIALS , 2024 . |
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摘要 ：
This paper studies superlattice materials with M barrier (InAs/GaSb/AlSb/GaSb superlattice) and B barrier (InAs/AlSb superlattice) structures. Firstly, it introduces the diffusion current, generation-recombination current, tunneling current and surface leakage current in devices, and analyzes the factors affecting different dark current mechanisms. Secondly, it theoretically analyzes the influence of the two barrier structures on device performance. Finally, devices were fabricated using these two structures, and the device performance was characterized. At a bias voltage of -50 mV and operating temperature of 77K. The PIMN type long-wave infrared (LWIR) detector has an RA of 91.4 omega cm2 and a LW dark current density of 3.51 x 10-4 A cm-2. The PIBN type LWIR detector has an RA of 439 omega cm2 and a LW dark current density of 2.81 x 10-4 A cm-2. Meanwhile, by fitting the data at different temperatures, the activation energy Ea of the PIMN type LWIR detector is 119.8 meV, with dark current mainly determined by diffusion current and generation-recombination current. The activation energy Ea of the PIBN type LWIR detector is 126.2 meV, with dark current mainly determined by diffusion current. This experimentally verifies the dominant dark current mechanisms for the two barrier structures of LWIR detectors, providing strong support for the design of superlattice detector structures.
关键词 ：
Dark current mechanisms Dark current mechanisms Superlattice Superlattice Detector Detector Barrier Barrier
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| GB/T 7714 | Wang, Xiaohua , Li, Jingzhen , Yan, Yong et al. Effect of "M" and "B" superlattice barrier layers on dark current of long-wavelength infrared detectors [J]. | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2024 , 173 . |
| MLA | Wang, Xiaohua et al. "Effect of "M" and "B" superlattice barrier layers on dark current of long-wavelength infrared detectors" . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 173 (2024) . |
| APA | Wang, Xiaohua , Li, Jingzhen , Yan, Yong , Wen, Tao , Liu, Ming , You, Congya et al. Effect of "M" and "B" superlattice barrier layers on dark current of long-wavelength infrared detectors . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2024 , 173 . |
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摘要 ：
Intelligent vision necessitates the deployment of detectors that are always-on and low-power, mirroring the continuous and uninterrupted responsiveness characteristic of human vision. Nonetheless, contemporary artificial vision systems attain this goal by the continuous processing of massive image frames and executing intricate algorithms, thereby expending substantial computational power and energy. In contrast, biological data processing, based on event-triggered spiking, has higher efficiency and lower energy consumption. Here, this work proposes an artificial vision architecture consisting of spiking photodetectors and artificial synapses, closely mirroring the intricacies of the human visual system. Distinct from previously reported techniques, the photodetector is self-powered and event-triggered, outputting light-modulated spiking signals directly, thereby fulfilling the imperative for always-on with low-power consumption. With the spiking signals processing through the integrated synapse units, recognition of graphics, gestures, and human action has been implemented, illustrating the potent image processing capabilities inherent within this architecture. The results prove the 90% accuracy rate in human action recognition within a mere five epochs utilizing a rudimentary artificial neural network. This novel architecture, grounded in spiking photodetectors, offers a viable alternative to the extant models of always-on low-power artificial vision system. A spiking-based artificial vision architecture consisting of event-based spiking photodetectors and artificial synapses is reported. The spiking photodetectors directly convert light into electrical spiking signals for artificial synapse-based neuromorphic computing. And the event-triggered mechanism greatly reduces the total power consumption. This fully emulated human vision architecture will effectively improve the performance of artificial vision systems. image
关键词 ：
spiking photodetector spiking photodetector human retina human retina low-power low-power artificial vision architecture artificial vision architecture machine vision machine vision
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| GB/T 7714 | Wu, Yi , Deng, Wenjie , Li, Kexin et al. A Spiking Artificial Vision Architecture Based on Fully Emulating the Human Vision [J]. | ADVANCED MATERIALS , 2024 , 36 (19) . |
| MLA | Wu, Yi et al. "A Spiking Artificial Vision Architecture Based on Fully Emulating the Human Vision" . | ADVANCED MATERIALS 36 . 19 (2024) . |
| APA | Wu, Yi , Deng, Wenjie , Li, Kexin , Wang, Xiaoting , Liu, Bo , Li, Jingzhen et al. A Spiking Artificial Vision Architecture Based on Fully Emulating the Human Vision . | ADVANCED MATERIALS , 2024 , 36 (19) . |
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摘要 ：
The tunnelling oxide passivation contact (TOPCon) solar cells have been impressive in the global photovoltaic (PV) market originating from their high efficiency and stability. However, it exhibits significant recombination losses due to its boron diffusion, laser damage and metal-semiconductor contact on front side. The bifacial TOPCon structure demonstrates massive potential in the improvement of passivation and contact performance with the premise that it can solve the parasitic absorption of polycrystalline silicon (poly-Si). In this study, the localized poly finger structure with excellent optics and passivation performance is designed in the front side of bifacial solar cells to compare with traditional TOPCon and full-area poly passivation devices. The theoretical efficiency and detailed power loss analysis in our simulation reveal that suppressing the recombination of FSF (front surface field) and the contact area is the crucial strategy to improve device performance, with optimized efficiency of 26.62 % and FF of 85.16 %. These results indicate that the route of BJ (back junction) structure containing localized selective contact and full coverage high-quality passivation holds potential in realizing both high J(sc) and V-oc for FBC (front and back contact) solar cells, featuring great instructive significance for future industrialization of PV production.
关键词 ：
Selectivity Selectivity Simulation Simulation Bifacial TOPCon Bifacial TOPCon FELA FELA
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| GB/T 7714 | Zhou, Zixiao , Kang, Qian , Sun, Zhaoqing et al. Optimizing strategy of bifacial TOPCon solar cells with front-side local passivation contact realized by numerical simulation [J]. | SOLAR ENERGY MATERIALS AND SOLAR CELLS , 2024 , 278 . |
| MLA | Zhou, Zixiao et al. "Optimizing strategy of bifacial TOPCon solar cells with front-side local passivation contact realized by numerical simulation" . | SOLAR ENERGY MATERIALS AND SOLAR CELLS 278 (2024) . |
| APA | Zhou, Zixiao , Kang, Qian , Sun, Zhaoqing , He, Yongcai , Li, Jingjie , Sun, Chang et al. Optimizing strategy of bifacial TOPCon solar cells with front-side local passivation contact realized by numerical simulation . | SOLAR ENERGY MATERIALS AND SOLAR CELLS , 2024 , 278 . |
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摘要 ：
一种有机‑无机杂化手性钙钛矿薄膜的制备方法，属于有机‑无机杂化手性钙钛矿材料领域。本方法直接将手性有机盐和卤化铅前驱体混合溶解于有机溶剂中，进行充分搅拌直至完全溶解，再使用移液枪滴加在旋涂所用的透明衬底上，后续再经过退火处理，在常压下，生成高质量手性钙钛矿薄膜样品，薄膜表面均匀性高，并且能够用于圆偏振光电探测。该工艺步骤简单，可复现性高，周期较短，且成本低廉。
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| GB/T 7714 | 马洋 , 陈虎 , 张永哲 et al. 一种有机-无机杂化手性钙钛矿薄膜的制备方法 : CN202310584396.8[P]. | 2023-05-23 . |
| MLA | 马洋 et al. "一种有机-无机杂化手性钙钛矿薄膜的制备方法" : CN202310584396.8. | 2023-05-23 . |
| APA | 马洋 , 陈虎 , 张永哲 , 王晓亭 , 周梦晨 . 一种有机-无机杂化手性钙钛矿薄膜的制备方法 : CN202310584396.8. | 2023-05-23 . |
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摘要 ：
一种利用空位缺陷调节过渡金属硫族化合物宽光谱探测的方法，属于二维材料领域。本方法采用过渡金属氧化物作为金属源，两种不同的硫族元素作为硫源，使用化学气相沉积的方法生长出元素均匀分布的单层三元过渡金属硫族化合物。利用合金元素之间化学键的稳定性差异，通过氢气辅助退火的方式使不稳定的化学键断裂，产生的硫族元素空位缺陷均匀分布在三元过渡金属硫族化合物中。硫族元素空位缺陷在过渡金属硫族化合物的导带和价带之间引入缺陷能级，产生新的光致发光峰，拓宽了其光谱探测范围。该实验方法工艺简单，重复性好，对缺陷的种类、分布和数量能进行精确调控，适合大规模生产。
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| GB/T 7714 | 张永哲 , 马洋 , 李景涛 . 一种利用空位缺陷调节过渡金属硫族化合物宽光谱探测的方法 : CN202310769296.2[P]. | 2023-06-28 . |
| MLA | 张永哲 et al. "一种利用空位缺陷调节过渡金属硫族化合物宽光谱探测的方法" : CN202310769296.2. | 2023-06-28 . |
| APA | 张永哲 , 马洋 , 李景涛 . 一种利用空位缺陷调节过渡金属硫族化合物宽光谱探测的方法 : CN202310769296.2. | 2023-06-28 . |
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