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Cancer photothermal therapy based on near infrared fluorescent CdSeTe/ZnS quantum dots SCIE
期刊论文 | 2021 | ANALYTICAL METHODS
WoS核心集被引次数: 3
摘要&关键词 引用

摘要 :

Micro targeted therapy for cancer has become a hot topic in recent years because of its advantages of little damage to the human body and early treatment of cancer. Therefore, accurate, rapid treatment methods and biofriendly exogenous substances are extremely important. CdTeSe/ZnS core-shell quantum dots (QDs) have great potential in biomedical imaging and biological ablation therapy due to their advantages of near-infrared radiation, aqueous synthesis and bio-friendliness. In this paper, CdTeSe/ZnS core-shell QDs were prepared by aqueous synthesis, and have near infrared output and excellent photothermal properties. A blue laser was used as the irradiation source and QD fluorescence imaging can accurately calibrate the treatment area. Under the photothermal and photodynamic effects of QDs, apoptosis of hepatoma cells Huh7 was induced, which provides a new micro-nano technology and biofriendly exogenous substances for cancer treatment.

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GB/T 7714 Wang, Jin , Su, XueQiong , Zhao, PengXiang et al. Cancer photothermal therapy based on near infrared fluorescent CdSeTe/ZnS quantum dots [J]. | ANALYTICAL METHODS , 2021 .
MLA Wang, Jin et al. "Cancer photothermal therapy based on near infrared fluorescent CdSeTe/ZnS quantum dots" . | ANALYTICAL METHODS (2021) .
APA Wang, Jin , Su, XueQiong , Zhao, PengXiang , Gao, DongWen , Chen, RuiXiang , Wang, Li . Cancer photothermal therapy based on near infrared fluorescent CdSeTe/ZnS quantum dots . | ANALYTICAL METHODS , 2021 .
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The single layer nano-laser with nanohole arrays prepared by three beams laser interference ablation on Ga0.1Co0.5ZnSe0.4 films EI
期刊论文 | 2021 , 544 | Applied Surface Science
摘要&关键词 引用

摘要 :

Nano-laser has a widely application in many fields such as biosensors, quantum memory, energy harvesting, photonic applications. However, there are still some problems in current preparation process of nano-laser device such as complex fabrication methods and high cost. Meanwhile, the size of nano-lasers has always been a challenge in the fabrication, and single-layer nano-film lasers have rarely been reported. Here, we propose a method of three beams laser interference ablation on Ga0.1Co0.5ZnSe0.4 film. The nanohole arrays with a period of 1 μm are fabricated. The film of Ga0.1Co0.5ZnSe0.4 used for ablation is prepared via Pulse Laser Deposition (PLD) technology. Then, the structure and components of the film are characterized by X-Ray Diffraction (XRD) and Raman spectrum. The real existence and chemical valence state of the Co, Ga, Zn and Se elements are proved by X-Ray Photoelectron Spectroscopy (XPS). The stoichiometry of thin film is confirmed by X-Ray Fluorescence Spectrometer (XRF). The morphology and cross section of the nanohole arrays is demonstrated by Scanning Electron Microscope (SEM), illustrating the depth of hole around 760 nm. To gain more understanding about the laser emission, the single-layer film with nanohole structure is simulated by Finite Difference Time Domain (FDTD) solutions. Finally, the PL spectrum reveals a 903 nm-laser emission at near-infrared. All the results show that a simple, efficient and low-cost single-layer nano laser film is presented. © 2020

关键词 :

Ablation Ablation Cobalt compounds Cobalt compounds Cobalt metallography Cobalt metallography Energy harvesting Energy harvesting Film preparation Film preparation Finite difference time domain method Finite difference time domain method Gallium compounds Gallium compounds Infrared devices Infrared devices Morphology Morphology Scanning electron microscopy Scanning electron microscopy Selenium compounds Selenium compounds Thin films Thin films Time domain analysis Time domain analysis X ray photoelectron spectroscopy X ray photoelectron spectroscopy X ray spectrometers X ray spectrometers Zinc compounds Zinc compounds Zinc metallography Zinc metallography

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GB/T 7714 Pan, Yong , Wang, Li , Su, Xueqiong et al. The single layer nano-laser with nanohole arrays prepared by three beams laser interference ablation on Ga0.1Co0.5ZnSe0.4 films [J]. | Applied Surface Science , 2021 , 544 .
MLA Pan, Yong et al. "The single layer nano-laser with nanohole arrays prepared by three beams laser interference ablation on Ga0.1Co0.5ZnSe0.4 films" . | Applied Surface Science 544 (2021) .
APA Pan, Yong , Wang, Li , Su, Xueqiong , Gao, Dongwen . The single layer nano-laser with nanohole arrays prepared by three beams laser interference ablation on Ga0.1Co0.5ZnSe0.4 films . | Applied Surface Science , 2021 , 544 .
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The roles of surface defects in MAPbBr(3) and multi-structures in MAPbI(3) SCIE
期刊论文 | 2021 , 122 | OPTICAL MATERIALS
WoS核心集被引次数: 5
摘要&关键词 引用

摘要 :

The research of perovskites optical properties is of great value for dual wavelength lasers. However, the phenomenon of double peaks in perovskites photoluminescence (PL) has not been explained systematically, which makes the optical research of perovskites still a challenge. In order to have a deep understanding of the optical properties and applications of new perovskite materials, this phenomenon of MAPbX(3) (X = I inverted exclamation , Br inverted exclamation ) is explained in this paper. The structural characteristics of the materials were investigated by XRD. We found that there were PbBr2 defects in MAPbBr(3) and orthorhombic structure defects in MAPbI(3); By calculating the energy level distribution of perovskites and defects, the PbBr2 in MAPbBr(3) and orthorhombic phase structure in MAPbI(3) can introduce a new energy level into crystals and these two structures lead to the PL peaks of 542 nm and 771 nm, respectively. It is the surface defects in MAPbBr(3) and multi-structures in MAPbI(3) that leads to the two peaks phenomenon of perovskite photoluminescence. All the work explained the mechanism of perovskites PL double peaks. This study can provide theoretical reference for perovskites researches and experimental references for new materials and a promising pathway for dual-wavelength, practical laser based on perovskite crystals.

关键词 :

Dual wavelength laser Dual wavelength laser Energy level Energy level Photoluminescence Photoluminescence Structure Structure Surface defects Surface defects Two peaks Two peaks

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GB/T 7714 Chen, Rui-xiang , Su, Xue-qiong , Wang, Jin et al. The roles of surface defects in MAPbBr(3) and multi-structures in MAPbI(3) [J]. | OPTICAL MATERIALS , 2021 , 122 .
MLA Chen, Rui-xiang et al. "The roles of surface defects in MAPbBr(3) and multi-structures in MAPbI(3)" . | OPTICAL MATERIALS 122 (2021) .
APA Chen, Rui-xiang , Su, Xue-qiong , Wang, Jin , Gao, Dong-wen , Pan, Yong , Wang, Yi-meng et al. The roles of surface defects in MAPbBr(3) and multi-structures in MAPbI(3) . | OPTICAL MATERIALS , 2021 , 122 .
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Near infrared dual wavelength micro surface particle laser SCIE
期刊论文 | 2021 , 562 | APPLIED SURFACE SCIENCE
WoS核心集被引次数: 4
摘要&关键词 引用

摘要 :

Miniaturization and integration of lasers have been a hot topic in recent years. Colloidal quantum dots (CQDS) can be used as laser gain media because of their high luminous efficiency and low threshold. Compact distributed Bragg reflector (DBR) combined with CQDs is used to construct micro laser. In this paper, CdTeSe/ZnS core-shell CQDs were prepared by aqueous synthesis. DBR was fabricated by magnetron sputtering using SiO2 and TiO2 through reasonable design of their thickness and repetition cycle number. CQDs were dropped on the surface of DBR to form a low-cost small-scale surface particle laser (SPL). The output emission of 770 nm and 824 nm dual wavelength laser is realized. The threshold is 11 mW/cm2 and the bandwidth is 1 nm. The micro integrated laser with high intensity and Narrow bandwidth near infrared emission has been completed.

关键词 :

CdTeSe CdTeSe DBR DBR Dual-wavelength Dual-wavelength Micro laser Micro laser ZnS ZnS

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GB/T 7714 Wang, Jin , Su, Xue-Qiong , Gao, Dong-Wen et al. Near infrared dual wavelength micro surface particle laser [J]. | APPLIED SURFACE SCIENCE , 2021 , 562 .
MLA Wang, Jin et al. "Near infrared dual wavelength micro surface particle laser" . | APPLIED SURFACE SCIENCE 562 (2021) .
APA Wang, Jin , Su, Xue-Qiong , Gao, Dong-Wen , Chen, Rui-Xiang , Mu, Yun-Yun , Zhang, Xin-Ping et al. Near infrared dual wavelength micro surface particle laser . | APPLIED SURFACE SCIENCE , 2021 , 562 .
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Capillary Sensors Composed of CdTe Quantum Dots for Real-Time In Situ Detection of Cu2+ SCIE
期刊论文 | 2021 , 4 (9) , 8990-8997 | ACS APPLIED NANO MATERIALS
WoS核心集被引次数: 24
摘要&关键词 引用

摘要 :

CdTe colloidal quantum dots (CQDs) coated with glutathione (GSH) were prepared by aqueous synthesis. Based on the fluorescence selective quenching of CdTe CQDs in the presence of Cu2+, the CdTe CQDs were applied for ultrasensitive Cu2+ sensing. The detection limit of Cu2+ concentration was 0.055 mu M. In order to realize real-time and rapid on-site detection, a capillary sensor composed of CdTe CQDs was prepared, and after drying at room temperature, heating at high temperature, and laser processing, the sensor achieved good response time and detection accuracy results. The detection of 1 x 10(-5) mol/L Cu2+ concentration can be realized in 5-6 s. Moreover, the detection only needs to be carried out under an ultraviolet lamp, the cost of the sensor is low, and the detection method is very simple. The sensor requires only 3 mu L of solution to be tested and can complete the detection, which not only saves the solution to be tested but also greatly improves the limit of the detection environment. A capillary sensor is of great significance for the real-time detection of natural environment and industrial wastewater.

关键词 :

capillary capillary CdTe CdTe colloidal quantum dots colloidal quantum dots copper ion copper ion real-time rapid detection real-time rapid detection

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GB/T 7714 Wang, Jin , Su, XueQiong , Gao, DongWen et al. Capillary Sensors Composed of CdTe Quantum Dots for Real-Time In Situ Detection of Cu2+ [J]. | ACS APPLIED NANO MATERIALS , 2021 , 4 (9) : 8990-8997 .
MLA Wang, Jin et al. "Capillary Sensors Composed of CdTe Quantum Dots for Real-Time In Situ Detection of Cu2+" . | ACS APPLIED NANO MATERIALS 4 . 9 (2021) : 8990-8997 .
APA Wang, Jin , Su, XueQiong , Gao, DongWen , Chen, RuiXiang , Mu, YunYun , Zhang, XinPing et al. Capillary Sensors Composed of CdTe Quantum Dots for Real-Time In Situ Detection of Cu2+ . | ACS APPLIED NANO MATERIALS , 2021 , 4 (9) , 8990-8997 .
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Micro-Structure Changes Caused by Thermal Evolution in Chalcogenide GexAsySe1-x-y Thin Films by In Situ Measurements SCIE
期刊论文 | 2021 , 14 (10) | MATERIALS
WoS核心集被引次数: 2
摘要&关键词 引用

摘要 :

To understand the effects of thermal annealing on the structure of GexAsySe1-x-y thin films, the thermal evolution of these films was measured by the in situ X-ray diffraction (XRD) at different temperature (773 K or 1073 K) in a vacuum (10(-1) Pa) environment. The entire process of crystallization can be observed by using in situ XRD, which is from the appearance of a crystal structure to melting liquid-state and ultimately to the disappearance of the amorphous structure. In the crystallized process, the corresponding state-transition temperatures T-x (the onset crystallization temperature), T-l (the transition temperature from glassy-state to liquid-state), T-p (peak crystallization temperature) are linear with MCN (Mean Coordination Number). In order to obtain information about changes in the amorphous structural origin of the anneal-induced material, the samples were analyzed by in situ Raman spectroscopy. Analysis of the results through decomposing the Raman spectra into different structural units showed that the Ge-Ge, As-As, or Se-Se homopolar bonds as the nonequilibrium minority carriers could be found in films. It suggests that the formation of these bonds cannot be completely suppressed in any case, as one falls and another rises.

关键词 :

chalcogenide glasses chalcogenide glasses conduction mechanisms conduction mechanisms electrical conductivity electrical conductivity GexAsySe1-x-y GexAsySe1-x-y

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GB/T 7714 Su, Xueqiong , Pan, Yong , Gao, Dongwen et al. Micro-Structure Changes Caused by Thermal Evolution in Chalcogenide GexAsySe1-x-y Thin Films by In Situ Measurements [J]. | MATERIALS , 2021 , 14 (10) .
MLA Su, Xueqiong et al. "Micro-Structure Changes Caused by Thermal Evolution in Chalcogenide GexAsySe1-x-y Thin Films by In Situ Measurements" . | MATERIALS 14 . 10 (2021) .
APA Su, Xueqiong , Pan, Yong , Gao, Dongwen , Li, Shufeng , Wang, Jin , Wang, Rongping et al. Micro-Structure Changes Caused by Thermal Evolution in Chalcogenide GexAsySe1-x-y Thin Films by In Situ Measurements . | MATERIALS , 2021 , 14 (10) .
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Effect of incorporating two-dimensional transition metal Mo and photoelectric element Ga on micro-characteristic of chalcogenide-based ZnS/Se SCIE
期刊论文 | 2021 , 47 (22) , 31423-31432 | CERAMICS INTERNATIONAL
WoS核心集被引次数: 2
摘要&关键词 引用

摘要 :

There is a challenge to increase the application range of chalcogenide materials due to the fixed photoelectric properties and complex preparation process. To solves the problem, bulk ceramics with different doping ratios should be investigated. Here, the influence of the doping ratio of molybdenum MO and Ga oxide on the composition, structure, morphology and luminescence properties of bulk ceramics is studied, the optimal doping ratio in this range is determined by analysis of mass loss and volume shrinkage. The cubic crystal structure is confirmed by X-ray diffraction results. The results showed that molybdenum was successfully doped Mo into the matrix material is revealed by Raman spectroscopy. The X-ray fluorescence is used to study the composition ratio changes of bulk ceramics before and after sintering. The molecular structure model of Mo-ZnSe/ZnS with different concentration is constructed. The X-ray photoelectron spectroscopy shows the spin orbits of Zn 2p and S 2p, as well as the +3 valences in terms of Mo and Ga. The optical performance is enhanced the light-emitting band is enlarged to the near infrared region. All the work suggest that this new compound has an improved micro-structural, optical and electrical properties. This research can provide theoretical and experimental reference for the doping research of chalcogenide materials and new optoelectronic devices.

关键词 :

Band gap Band gap Doping Doping Optical properties Optical properties Structure Structure

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GB/T 7714 Gao, Dongwen , Wang, Li , Su, Xueqiong . Effect of incorporating two-dimensional transition metal Mo and photoelectric element Ga on micro-characteristic of chalcogenide-based ZnS/Se [J]. | CERAMICS INTERNATIONAL , 2021 , 47 (22) : 31423-31432 .
MLA Gao, Dongwen et al. "Effect of incorporating two-dimensional transition metal Mo and photoelectric element Ga on micro-characteristic of chalcogenide-based ZnS/Se" . | CERAMICS INTERNATIONAL 47 . 22 (2021) : 31423-31432 .
APA Gao, Dongwen , Wang, Li , Su, Xueqiong . Effect of incorporating two-dimensional transition metal Mo and photoelectric element Ga on micro-characteristic of chalcogenide-based ZnS/Se . | CERAMICS INTERNATIONAL , 2021 , 47 (22) , 31423-31432 .
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Influence of InGaZnO Films with Different Ratios on Refractive Index Sensing Characteristics of LPFG SCIE
期刊论文 | 2020 , 10 (10) | COATINGS
WoS核心集被引次数: 2
摘要&关键词 引用

摘要 :

Sensitive materials are widely used in the field of optical fiber sensing because of their unique advantages such as rich types, controllable composition ratio and diverse structure distribution. In this paper, the surface of long-period fiber gratings with InGaZnO [(In2O3):(Ga2O3):(ZnO)] nano films with different compositions were coated by pulse laser deposition (PLD) technology. The best sensing ratio and the high sensitivity sensing of the refractive index of long-period fiber grating (LPFG) were achieved through the analysis of the influence of different ratios of InGaZnO nano films on the refractive index sensing characteristics of grating. High sensitivities of 337 nm/RIU (refractive index unit) and 145 dB/RIU of the LPFG are achieved when the best doping ratio of InGaZnO is 7:1:2.

关键词 :

InGaZnO nanofilm InGaZnO nanofilm LPFG LPFG PLD PLD refractive index sensing refractive index sensing

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GB/T 7714 Yan, Huanhuan , Wang, Li , Li, Shufeng et al. Influence of InGaZnO Films with Different Ratios on Refractive Index Sensing Characteristics of LPFG [J]. | COATINGS , 2020 , 10 (10) .
MLA Yan, Huanhuan et al. "Influence of InGaZnO Films with Different Ratios on Refractive Index Sensing Characteristics of LPFG" . | COATINGS 10 . 10 (2020) .
APA Yan, Huanhuan , Wang, Li , Li, Shufeng , Zhang, Huisong , Wang, Jin , Cheng, Peng . Influence of InGaZnO Films with Different Ratios on Refractive Index Sensing Characteristics of LPFG . | COATINGS , 2020 , 10 (10) .
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Dual parameter measurement system for temperature and stress based on Sagnac interferomter SCIE
期刊论文 | 2020 , 16 (1) | JOURNAL OF THE EUROPEAN OPTICAL SOCIETY-RAPID PUBLICATIONS
WoS核心集被引次数: 6
摘要&关键词 引用

关键词 :

FBG FBG Fiber loop mirror Fiber loop mirror PCF PCF Stress sensing Stress sensing Temperature sensor Temperature sensor

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GB/T 7714 Yan, Huanhuan , Wang, Li , Li, Songtao et al. Dual parameter measurement system for temperature and stress based on Sagnac interferomter [J]. | JOURNAL OF THE EUROPEAN OPTICAL SOCIETY-RAPID PUBLICATIONS , 2020 , 16 (1) .
MLA Yan, Huanhuan et al. "Dual parameter measurement system for temperature and stress based on Sagnac interferomter" . | JOURNAL OF THE EUROPEAN OPTICAL SOCIETY-RAPID PUBLICATIONS 16 . 1 (2020) .
APA Yan, Huanhuan , Wang, Li , Li, Songtao , Wang, Jin . Dual parameter measurement system for temperature and stress based on Sagnac interferomter . | JOURNAL OF THE EUROPEAN OPTICAL SOCIETY-RAPID PUBLICATIONS , 2020 , 16 (1) .
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The transport mechanisms at localized states of thin films of GexAsySe1-x-y chalcogenide glasses under off-equilibrium conditions SCIE
期刊论文 | 2020 , 709 | THIN SOLID FILMS
WoS核心集被引次数: 2
摘要&关键词 引用

摘要 :

The resistance of chalcogenide glass GexAsySe1-x-y film is difficult to be observed due to the electrons pinned near the Fermi level, the large electron binding energy, and the large film resistance. Because the resistance is too large, the test method of Hall effect cannot be used to investigate the electrical properties for chalcogenide glass. In this work, the resistance relaxation states of a series of Ge(x)As(y)Se(1-x-y )films with different components are observed by reducing the resistance under non-equilibrium temperature conditions from 300 to 440 K, and then the local state electron transport mechanism is investigated. It is interesting that the electrical properties parameters show three relaxation states: 1) The conventional trend is that the conductivity decreases with the increase of temperature. 2) One particular trend is that the resistance presents a wavy shape as the temperature increases. 3) The most special trend is that as the temperature is raised during the conductivity measurements, the conductivity increases before decreases after having reach a certain temperature. Computer calculation results show that the Boltzmann fit formula is more suitable than simply Boltzmann formula for GexAsySe1-x-y halcogenide film in terms of a low-mobility semiconductor with deep Fermi level and hopping conduction. Through calculations, it is found that three relaxation states are decided by the density of the localized states at Fermi level.

关键词 :

Chalcogenide glasses Chalcogenide glasses Electrical conductivity Electrical conductivity Germanium antimony selenide Germanium antimony selenide GexAsySe1-x-y Conduction mechanisms GexAsySe1-x-y Conduction mechanisms Thermal evaporation Thermal evaporation Thin films Thin films

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GB/T 7714 Su, Xueqiong , Pan, Yong , Gao, Dongwen et al. The transport mechanisms at localized states of thin films of GexAsySe1-x-y chalcogenide glasses under off-equilibrium conditions [J]. | THIN SOLID FILMS , 2020 , 709 .
MLA Su, Xueqiong et al. "The transport mechanisms at localized states of thin films of GexAsySe1-x-y chalcogenide glasses under off-equilibrium conditions" . | THIN SOLID FILMS 709 (2020) .
APA Su, Xueqiong , Pan, Yong , Gao, Dongwen , Li, Shufeng , Wang, Jin , Wang, GuiSheng et al. The transport mechanisms at localized states of thin films of GexAsySe1-x-y chalcogenide glasses under off-equilibrium conditions . | THIN SOLID FILMS , 2020 , 709 .
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