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学者姓名:王丽
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摘要 :
In this work, core CdTe, core-shell CdTe/CdSe and alloy CdTeSe QDs are synthesized by aqueous solvent. TEM visually shows the rod-shaped core-shell structure with a transverse to longitudinal ratio of 6.5 and the ellipsoidal alloy structure with different crystal planes competing for growth. The XRD and Raman spectra of the three QDs illustrate the characteristics of the internal lattice structure. With the increase of reaction time, CdTe emission maximum (EM) shows a red shift of 84 nm. Stokes shift changes little, and full width half maximum (FWHM) increases slightly. Compared with the CdTe, the red shift of CdTe/CdSe EM is slowly first and then faster, with a total shift of 125 nm. Stokes shift increases obviously. The initial FWHM is larger than CdTe and the widening speed is gradually accelerated. The initial EM of CdTeSe is red shifted compared with CdTe, and the total red shift of EM is 72 nm. Stokes shift increases obviously. The initial FWHM is significantly wider than CdTe. FWHM first decreases and then increases with reaction time. CdTe shows obvious band edge exciton absorbance of photoluminescence excitation (PLE) spectrum between 356 nm and 400 nm. CdTe/CdSe shows double band edge exciton absorption at 354-373 nm and 401-436 nm due to wave function separated of core-shell structure. The PLE spectrum of CdTeSe shows an obvious upward trend at 306-373 nm due to high energy level nonradiation. The average lifetime of CdTe/CdSe increases by 53 ns compared with CdTe due to the spatially separated electrons and holes. The defect state of CdTeSe increases the proportion of fast delay, which is 2 ns shorter than the average lifetime of CdTe. The transition mechanism of core-shell indirect band gap and alloy direct band gap is explained according to the valence bands of each element shown by XPS and the simulation of energy band density of states. The thickness shell and the doping elements can be adjusted to provide rich variation in the optical properties. This provides a more definite direction for the applications of cadmium chalcogenide in the fields of photoelectric devices and biology. (C) 2022 Elsevier B.V. All rights reserved.
关键词 :
Band gap engineering Band gap engineering Rod-shaped core/shell Rod-shaped core/shell Ellipsoidal alloy Ellipsoidal alloy Cadmium QDs Cadmium QDs Optical properties Optical properties
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GB/T 7714 | Wang, Jin , Wang, Li , Su, XueQiong et al. Bandgap engineering of CdTe/CdSe rod-shaped core/shell and CdTeSe ellipsoidal alloy quantum dots with tunable and intense emission [J]. | JOURNAL OF ALLOYS AND COMPOUNDS , 2022 , 920 . |
MLA | Wang, Jin et al. "Bandgap engineering of CdTe/CdSe rod-shaped core/shell and CdTeSe ellipsoidal alloy quantum dots with tunable and intense emission" . | JOURNAL OF ALLOYS AND COMPOUNDS 920 (2022) . |
APA | Wang, Jin , Wang, Li , Su, XueQiong , Chen, RuiXiang . Bandgap engineering of CdTe/CdSe rod-shaped core/shell and CdTeSe ellipsoidal alloy quantum dots with tunable and intense emission . | JOURNAL OF ALLOYS AND COMPOUNDS , 2022 , 920 . |
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摘要 :
Miniaturization and integration of lasers have been a hot topic in recent years. Colloidal quantum dots (CQDS) can be used as laser gain media because of their high luminous efficiency and low threshold. Compact distributed Bragg reflector (DBR) combined with CQDs is used to construct micro laser. In this paper, CdTeSe/ZnS core-shell CQDs were prepared by aqueous synthesis. DBR was fabricated by magnetron sputtering using SiO2 and TiO2 through reasonable design of their thickness and repetition cycle number. CQDs were dropped on the surface of DBR to form a low-cost small-scale surface particle laser (SPL). The output emission of 770 nm and 824 nm dual wavelength laser is realized. The threshold is 11 mW/cm2 and the bandwidth is 1 nm. The micro integrated laser with high intensity and Narrow bandwidth near infrared emission has been completed.
关键词 :
CdTeSe CdTeSe DBR DBR Dual-wavelength Dual-wavelength Micro laser Micro laser ZnS ZnS
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GB/T 7714 | Wang, Jin , Su, Xue-Qiong , Gao, Dong-Wen et al. Near infrared dual wavelength micro surface particle laser [J]. | APPLIED SURFACE SCIENCE , 2021 , 562 . |
MLA | Wang, Jin et al. "Near infrared dual wavelength micro surface particle laser" . | APPLIED SURFACE SCIENCE 562 (2021) . |
APA | Wang, Jin , Su, Xue-Qiong , Gao, Dong-Wen , Chen, Rui-Xiang , Mu, Yun-Yun , Zhang, Xin-Ping et al. Near infrared dual wavelength micro surface particle laser . | APPLIED SURFACE SCIENCE , 2021 , 562 . |
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摘要 :
Nano-laser has a widely application in many fields such as biosensors, quantum memory, energy harvesting, photonic applications. However, there are still some problems in current preparation process of nano-laser device such as complex fabrication methods and high cost. Meanwhile, the size of nano-lasers has always been a challenge in the fabrication, and single-layer nano-film lasers have rarely been reported. Here, we propose a method of three beams laser interference ablation on Ga0.1Co0.5ZnSe0.4 film. The nanohole arrays with a period of 1 μm are fabricated. The film of Ga0.1Co0.5ZnSe0.4 used for ablation is prepared via Pulse Laser Deposition (PLD) technology. Then, the structure and components of the film are characterized by X-Ray Diffraction (XRD) and Raman spectrum. The real existence and chemical valence state of the Co, Ga, Zn and Se elements are proved by X-Ray Photoelectron Spectroscopy (XPS). The stoichiometry of thin film is confirmed by X-Ray Fluorescence Spectrometer (XRF). The morphology and cross section of the nanohole arrays is demonstrated by Scanning Electron Microscope (SEM), illustrating the depth of hole around 760 nm. To gain more understanding about the laser emission, the single-layer film with nanohole structure is simulated by Finite Difference Time Domain (FDTD) solutions. Finally, the PL spectrum reveals a 903 nm-laser emission at near-infrared. All the results show that a simple, efficient and low-cost single-layer nano laser film is presented. © 2020
关键词 :
Ablation Ablation Cobalt compounds Cobalt compounds Cobalt metallography Cobalt metallography Energy harvesting Energy harvesting Film preparation Film preparation Finite difference time domain method Finite difference time domain method Gallium compounds Gallium compounds Infrared devices Infrared devices Morphology Morphology Scanning electron microscopy Scanning electron microscopy Selenium compounds Selenium compounds Thin films Thin films Time domain analysis Time domain analysis X ray photoelectron spectroscopy X ray photoelectron spectroscopy X ray spectrometers X ray spectrometers Zinc compounds Zinc compounds Zinc metallography Zinc metallography
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GB/T 7714 | Pan, Yong , Wang, Li , Su, Xueqiong et al. The single layer nano-laser with nanohole arrays prepared by three beams laser interference ablation on Ga0.1Co0.5ZnSe0.4 films [J]. | Applied Surface Science , 2021 , 544 . |
MLA | Pan, Yong et al. "The single layer nano-laser with nanohole arrays prepared by three beams laser interference ablation on Ga0.1Co0.5ZnSe0.4 films" . | Applied Surface Science 544 (2021) . |
APA | Pan, Yong , Wang, Li , Su, Xueqiong , Gao, Dongwen . The single layer nano-laser with nanohole arrays prepared by three beams laser interference ablation on Ga0.1Co0.5ZnSe0.4 films . | Applied Surface Science , 2021 , 544 . |
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摘要 :
To understand the effects of thermal annealing on the structure of GexAsySe1-x-y thin films, the thermal evolution of these films was measured by the in situ X-ray diffraction (XRD) at different temperature (773 K or 1073 K) in a vacuum (10(-1) Pa) environment. The entire process of crystallization can be observed by using in situ XRD, which is from the appearance of a crystal structure to melting liquid-state and ultimately to the disappearance of the amorphous structure. In the crystallized process, the corresponding state-transition temperatures T-x (the onset crystallization temperature), T-l (the transition temperature from glassy-state to liquid-state), T-p (peak crystallization temperature) are linear with MCN (Mean Coordination Number). In order to obtain information about changes in the amorphous structural origin of the anneal-induced material, the samples were analyzed by in situ Raman spectroscopy. Analysis of the results through decomposing the Raman spectra into different structural units showed that the Ge-Ge, As-As, or Se-Se homopolar bonds as the nonequilibrium minority carriers could be found in films. It suggests that the formation of these bonds cannot be completely suppressed in any case, as one falls and another rises.
关键词 :
conduction mechanisms conduction mechanisms GexAsySe1-x-y GexAsySe1-x-y chalcogenide glasses chalcogenide glasses electrical conductivity electrical conductivity
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GB/T 7714 | Su, Xueqiong , Pan, Yong , Gao, Dongwen et al. Micro-Structure Changes Caused by Thermal Evolution in Chalcogenide GexAsySe1-x-y Thin Films by In Situ Measurements [J]. | MATERIALS , 2021 , 14 (10) . |
MLA | Su, Xueqiong et al. "Micro-Structure Changes Caused by Thermal Evolution in Chalcogenide GexAsySe1-x-y Thin Films by In Situ Measurements" . | MATERIALS 14 . 10 (2021) . |
APA | Su, Xueqiong , Pan, Yong , Gao, Dongwen , Li, Shufeng , Wang, Jin , Wang, Rongping et al. Micro-Structure Changes Caused by Thermal Evolution in Chalcogenide GexAsySe1-x-y Thin Films by In Situ Measurements . | MATERIALS , 2021 , 14 (10) . |
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摘要 :
CdTe colloidal quantum dots (CQDs) coated with glutathione (GSH) were prepared by aqueous synthesis. Based on the fluorescence selective quenching of CdTe CQDs in the presence of Cu2+, the CdTe CQDs were applied for ultrasensitive Cu2+ sensing. The detection limit of Cu2+ concentration was 0.055 mu M. In order to realize real-time and rapid on-site detection, a capillary sensor composed of CdTe CQDs was prepared, and after drying at room temperature, heating at high temperature, and laser processing, the sensor achieved good response time and detection accuracy results. The detection of 1 x 10(-5) mol/L Cu2+ concentration can be realized in 5-6 s. Moreover, the detection only needs to be carried out under an ultraviolet lamp, the cost of the sensor is low, and the detection method is very simple. The sensor requires only 3 mu L of solution to be tested and can complete the detection, which not only saves the solution to be tested but also greatly improves the limit of the detection environment. A capillary sensor is of great significance for the real-time detection of natural environment and industrial wastewater.
关键词 :
capillary capillary copper ion copper ion CdTe CdTe real-time rapid detection real-time rapid detection colloidal quantum dots colloidal quantum dots
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GB/T 7714 | Wang, Jin , Su, XueQiong , Gao, DongWen et al. Capillary Sensors Composed of CdTe Quantum Dots for Real-Time In Situ Detection of Cu2+ [J]. | ACS APPLIED NANO MATERIALS , 2021 , 4 (9) : 8990-8997 . |
MLA | Wang, Jin et al. "Capillary Sensors Composed of CdTe Quantum Dots for Real-Time In Situ Detection of Cu2+" . | ACS APPLIED NANO MATERIALS 4 . 9 (2021) : 8990-8997 . |
APA | Wang, Jin , Su, XueQiong , Gao, DongWen , Chen, RuiXiang , Mu, YunYun , Zhang, XinPing et al. Capillary Sensors Composed of CdTe Quantum Dots for Real-Time In Situ Detection of Cu2+ . | ACS APPLIED NANO MATERIALS , 2021 , 4 (9) , 8990-8997 . |
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摘要 :
Micro targeted therapy for cancer has become a hot topic in recent years because of its advantages of little damage to the human body and early treatment of cancer. Therefore, accurate, rapid treatment methods and biofriendly exogenous substances are extremely important. CdTeSe/ZnS core-shell quantum dots (QDs) have great potential in biomedical imaging and biological ablation therapy due to their advantages of near-infrared radiation, aqueous synthesis and bio-friendliness. In this paper, CdTeSe/ZnS core-shell QDs were prepared by aqueous synthesis, and have near infrared output and excellent photothermal properties. A blue laser was used as the irradiation source and QD fluorescence imaging can accurately calibrate the treatment area. Under the photothermal and photodynamic effects of QDs, apoptosis of hepatoma cells Huh7 was induced, which provides a new micro-nano technology and biofriendly exogenous substances for cancer treatment.
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GB/T 7714 | Wang, Jin , Su, XueQiong , Zhao, PengXiang et al. Cancer photothermal therapy based on near infrared fluorescent CdSeTe/ZnS quantum dots [J]. | ANALYTICAL METHODS , 2021 , 13 (45) : 5509-5515 . |
MLA | Wang, Jin et al. "Cancer photothermal therapy based on near infrared fluorescent CdSeTe/ZnS quantum dots" . | ANALYTICAL METHODS 13 . 45 (2021) : 5509-5515 . |
APA | Wang, Jin , Su, XueQiong , Zhao, PengXiang , Gao, DongWen , Chen, RuiXiang , Wang, Li . Cancer photothermal therapy based on near infrared fluorescent CdSeTe/ZnS quantum dots . | ANALYTICAL METHODS , 2021 , 13 (45) , 5509-5515 . |
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摘要 :
There is a challenge to increase the application range of chalcogenide materials due to the fixed photoelectric properties and complex preparation process. To solves the problem, bulk ceramics with different doping ratios should be investigated. Here, the influence of the doping ratio of molybdenum MO and Ga oxide on the composition, structure, morphology and luminescence properties of bulk ceramics is studied, the optimal doping ratio in this range is determined by analysis of mass loss and volume shrinkage. The cubic crystal structure is confirmed by X-ray diffraction results. The results showed that molybdenum was successfully doped Mo into the matrix material is revealed by Raman spectroscopy. The X-ray fluorescence is used to study the composition ratio changes of bulk ceramics before and after sintering. The molecular structure model of Mo-ZnSe/ZnS with different concentration is constructed. The X-ray photoelectron spectroscopy shows the spin orbits of Zn 2p and S 2p, as well as the +3 valences in terms of Mo and Ga. The optical performance is enhanced the light-emitting band is enlarged to the near infrared region. All the work suggest that this new compound has an improved micro-structural, optical and electrical properties. This research can provide theoretical and experimental reference for the doping research of chalcogenide materials and new optoelectronic devices.
关键词 :
Optical properties Optical properties Band gap Band gap Doping Doping Structure Structure
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GB/T 7714 | Gao, Dongwen , Wang, Li , Su, Xueqiong . Effect of incorporating two-dimensional transition metal Mo and photoelectric element Ga on micro-characteristic of chalcogenide-based ZnS/Se [J]. | CERAMICS INTERNATIONAL , 2021 , 47 (22) : 31423-31432 . |
MLA | Gao, Dongwen et al. "Effect of incorporating two-dimensional transition metal Mo and photoelectric element Ga on micro-characteristic of chalcogenide-based ZnS/Se" . | CERAMICS INTERNATIONAL 47 . 22 (2021) : 31423-31432 . |
APA | Gao, Dongwen , Wang, Li , Su, Xueqiong . Effect of incorporating two-dimensional transition metal Mo and photoelectric element Ga on micro-characteristic of chalcogenide-based ZnS/Se . | CERAMICS INTERNATIONAL , 2021 , 47 (22) , 31423-31432 . |
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摘要 :
The research of perovskites optical properties is of great value for dual wavelength lasers. However, the phenomenon of double peaks in perovskites photoluminescence (PL) has not been explained systematically, which makes the optical research of perovskites still a challenge. In order to have a deep understanding of the optical properties and applications of new perovskite materials, this phenomenon of MAPbX(3) (X = I inverted exclamation , Br inverted exclamation ) is explained in this paper. The structural characteristics of the materials were investigated by XRD. We found that there were PbBr2 defects in MAPbBr(3) and orthorhombic structure defects in MAPbI(3); By calculating the energy level distribution of perovskites and defects, the PbBr2 in MAPbBr(3) and orthorhombic phase structure in MAPbI(3) can introduce a new energy level into crystals and these two structures lead to the PL peaks of 542 nm and 771 nm, respectively. It is the surface defects in MAPbBr(3) and multi-structures in MAPbI(3) that leads to the two peaks phenomenon of perovskite photoluminescence. All the work explained the mechanism of perovskites PL double peaks. This study can provide theoretical reference for perovskites researches and experimental references for new materials and a promising pathway for dual-wavelength, practical laser based on perovskite crystals.
关键词 :
Surface defects Surface defects Energy level Energy level Structure Structure Photoluminescence Photoluminescence Dual wavelength laser Dual wavelength laser Two peaks Two peaks
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GB/T 7714 | Chen, Rui-xiang , Su, Xue-qiong , Wang, Jin et al. The roles of surface defects in MAPbBr(3) and multi-structures in MAPbI(3) [J]. | OPTICAL MATERIALS , 2021 , 122 . |
MLA | Chen, Rui-xiang et al. "The roles of surface defects in MAPbBr(3) and multi-structures in MAPbI(3)" . | OPTICAL MATERIALS 122 (2021) . |
APA | Chen, Rui-xiang , Su, Xue-qiong , Wang, Jin , Gao, Dong-wen , Pan, Yong , Wang, Yi-meng et al. The roles of surface defects in MAPbBr(3) and multi-structures in MAPbI(3) . | OPTICAL MATERIALS , 2021 , 122 . |
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摘要 :
Semiconducting microbelts are key components of the thermoelectric micro-devices, and their electrical transport properties play significant roles in determining the thermoelectric performance. Here, we report heavily Cu-doped single-crystal SnSe microbelts as potential candidates used in thermoelectric microdevices, fabricated by a facile solvothermal route. The considerable Cu-doping concentration of similar to 11.8% up to the solubility contributes to a high electrical conductivity of similar to 416.6 S m(-1) at room temperature, improved by one order of magnitude compared with pure SnSe (38.0 S m(-1)). Meanwhile, after loading similar to 1% compressive strain and laser radiation, the electrical conductivity can be further improved to similar to 601.9 S m(-1) and similar to 589.2 S m(-1), respectively, indicating great potentials for applying to thermoelectric microdevices. Comprehensive structural and compositional characterizations indicate that the Cu+ doping state provides more hole carriers into the system, contributing to the outstanding electrical conductivity. Calculations based on first-principle density functional theory reveal that the heavily doped Cu lowers the Fermi level down into the valence bands, generating holes, and the 1% strain can further reduce the bandgap, strengthening the ability to release holes, and, in turn, leading to such an excellent electrical transport performance. This study fills the gaps of finding novel materials as potential candidates used in the thermoelectric microdevices and provides new ideas for micro/nanoscale thermoelectric material design. (C) 2020 Elsevier Ltd. All rights reserved.
关键词 :
Cu-doping Cu-doping Electrical transport performance Electrical transport performance Irritation Irritation Stress Stress Tin selenide Tin selenide
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GB/T 7714 | Zheng, Y. , Shi, X. -L. , Yuan, H. et al. A synergy of strain loading and laser radiation in determining the high-performing electrical transports in the single Cu-doped SnSe microbelt [J]. | MATERIALS TODAY PHYSICS , 2020 , 13 . |
MLA | Zheng, Y. et al. "A synergy of strain loading and laser radiation in determining the high-performing electrical transports in the single Cu-doped SnSe microbelt" . | MATERIALS TODAY PHYSICS 13 (2020) . |
APA | Zheng, Y. , Shi, X. -L. , Yuan, H. , Lu, S. , Qu, X. , Liu, W. -D. et al. A synergy of strain loading and laser radiation in determining the high-performing electrical transports in the single Cu-doped SnSe microbelt . | MATERIALS TODAY PHYSICS , 2020 , 13 . |
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摘要 :
Amorphous and crystalline Zn1-xCoxS (x = 0.1, 0.3, 0.5) thin films were grown on sapphire (Al2O3) substrates by pulsed laser deposition at substrate temperature of 25 degrees C and 800 degrees C, respectively. The X-ray diffraction results show that the crystalline film has a cubic zinc blende structure and the crystalline quality decreased with increasing Co-doping concentration. The X-ray diffraction and X-ray photoelectron spectroscopy spectra reveal that the samples reached an overdoping state at Co-doping concentration of x = 0.5. The absorbance of films increases and the absorption edge shifts to longer wave length direction with increasing Co-doping concentration. The redshift of the band gap energy depends on the Co composition associating with the Urbach energy. Furthermore, the refractive index and dielectric constant increase with increasing Co-doping concentration. The dispersion parameters, such as dispersion energy (E-d), oscillator energy (E-o), static refractive index (n(0)), static dielectric constant (epsilon(0)), interband transition strength moments (M-1 and M-3), oscillator strength S-o and oscillator wavelength lambda(o), have been analyzed by Wemple-DiDomenico single oscillator model. All these parameters were found to be dependent upon the Co-doping concentration in the Zn1-xCoxS thin films.
关键词 :
optical properties optical properties PLD PLD structural structural thin film thin film Zn1-xCoxS Zn1-xCoxS
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GB/T 7714 | Li, Shufeng , Wang, Li , Su, Xueqiong et al. EFFECTS OF Co CONCENTRATION ON THE STRUCTURAL AND OPTICAL PROPERTIES OF Zn1-xCoxS FILMS [J]. | SURFACE REVIEW AND LETTERS , 2020 , 27 (8) . |
MLA | Li, Shufeng et al. "EFFECTS OF Co CONCENTRATION ON THE STRUCTURAL AND OPTICAL PROPERTIES OF Zn1-xCoxS FILMS" . | SURFACE REVIEW AND LETTERS 27 . 8 (2020) . |
APA | Li, Shufeng , Wang, Li , Su, Xueqiong , Pang, Yong , Gao, Dongwen , Han, Xiaowei . EFFECTS OF Co CONCENTRATION ON THE STRUCTURAL AND OPTICAL PROPERTIES OF Zn1-xCoxS FILMS . | SURFACE REVIEW AND LETTERS , 2020 , 27 (8) . |
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