您的检索：
学者姓名：邓金祥
精炼检索结果：
年份
成果类型
收录类型
来源
综合
合作者
语言
清除所有精炼条件
摘要 ：
采用高温固相法制备了磷酸盐荧光粉Ba3Yb1-x-y(PO4)3:xTb3+,yEu3+,利用X射线衍射对样品结构进行了分析,研究了荧光粉的发射光谱、激发光谱和发光强度时间衰减曲线,证明Tb3+和Eu3+之间存在能量传递.利用378 nm的光激发不同Tb3+和Eu3+配比的Ba3 Yb1-x-y(PO4)3:xTb3+,yEu3+荧光粉,发现其发光颜色呈现从绿光到白光、再到红光的变化,其中Ba3 Yb0.91(PO4)3:0.01Tb3+,0.08Eu3+样品的色坐标较接近标准白光.研究证明,磷酸盐Ba3 Yb1-x-y(PO4)3:xTb3+,yEu3+荧光粉是一种有潜力应用于白光发光二极管的材料.
关键词 ：
磷酸盐 磷酸盐 白光发光二极管 白光发光二极管 X射线衍射 X射线衍射 稀土发光 稀土发光
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | 李婷婷 , 王吉有 , 刘悦 et al. 稀土铽铕掺杂Ba3 Yb(PO4)3发光材料的研究 [J]. | 沧州师范学院学报 , 2021 , 37 (1) : 36-41 . |
| MLA | 李婷婷 et al. "稀土铽铕掺杂Ba3 Yb(PO4)3发光材料的研究" . | 沧州师范学院学报 37 . 1 (2021) : 36-41 . |
| APA | 李婷婷 , 王吉有 , 刘悦 , 邓金祥 . 稀土铽铕掺杂Ba3 Yb(PO4)3发光材料的研究 . | 沧州师范学院学报 , 2021 , 37 (1) , 36-41 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Lateral effect photodiodes sense the position of a laser beam by measuring the change of current between opposite anodes and a common cathode. They either require a bias current or the current is photogenerated. In either case, their linearity is affected by the non-uniformity of the current distribution between the anodes. We here propose a bias-free, lateral photo-diode, which consists of a resistive layer forming an extended Schottky contact to an intrinsic semiconductor. In our sensor, the photo-generated carriers do not diffuse laterally. Rather, their localization under the laser-beam results in a reduction of the barrier height due to image force effect. An open-circuit voltage appears between two opposite electrodes that is linear with the laser-beam position. A tetra-lateral configuration, with four anodes at the edges of a square-shaped sensor, allows sensing in two dimensions. (c) 2021 Elsevier B.V. All rights reserved.
关键词 ：
Photo-detectors Photo-detectors Position sensing Position sensing Schottky junctions Schottky junctions Image force effect Image force effect
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | Wang, Xiaolei , Sun, Xupeng , Zhai, Tianrui et al. A bias-free, lateral effect position sensor photo-detector [J]. | SENSORS AND ACTUATORS A-PHYSICAL , 2021 , 330 . |
| MLA | Wang, Xiaolei et al. "A bias-free, lateral effect position sensor photo-detector" . | SENSORS AND ACTUATORS A-PHYSICAL 330 (2021) . |
| APA | Wang, Xiaolei , Sun, Xupeng , Zhai, Tianrui , Yang, Qianqian , Cui, Shuainan , Zhang, Jie et al. A bias-free, lateral effect position sensor photo-detector . | SENSORS AND ACTUATORS A-PHYSICAL , 2021 , 330 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
本文采用射频磁控溅射法在Si (100)和石英衬底制备纯β-Ga_2O_3和不同浓度的Si掺杂β-Ga_2O_3薄膜,并且研究Si掺杂对β-Ga_2O_3薄膜结构、表面形貌和光学性质的影响。X射线衍射(XRD)测试结果表明,Si掺杂β-Ga_2O_3薄膜都未出现新的衍射峰,随着Si浓度的增加,β-Ga_2O_3的特征峰(111)逐渐向大角度方向移动。X射线光电子能谱(XPS)表明β-Ga_2O_3薄膜中成功掺入了Si元素。本文使用原子力显微镜(AFM)表征薄膜的表面形貌,结果表明薄膜表面的粗糙度随着Si浓度增加呈现单调递增的趋势。紫外-可见光(UV-visible)透射光谱表明薄膜均在可见光波...
关键词 ：
射频磁控溅射 射频磁控溅射 Si掺杂β-Ga_2O_3薄膜 Si掺杂β-Ga_2O_3薄膜 结构 结构 带隙宽度 带隙宽度
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | 张晓霞 , 邓金祥 , 孔乐 et al. 不同浓度的Si掺杂β-Ga_2O_3薄膜的制备及研究 [J]. | 真空 , 2021 , 58 (05) : 57-61 . |
| MLA | 张晓霞 et al. "不同浓度的Si掺杂β-Ga_2O_3薄膜的制备及研究" . | 真空 58 . 05 (2021) : 57-61 . |
| APA | 张晓霞 , 邓金祥 , 孔乐 , 李瑞东 , 杨子淑 , 张杰 . 不同浓度的Si掺杂β-Ga_2O_3薄膜的制备及研究 . | 真空 , 2021 , 58 (05) , 57-61 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
本文采用射频磁控溅射方法在石英和高阻硅衬底上制备纯茁-Ga_2O_3薄膜和不同掺杂浓度的Mg掺杂茁-Ga_2O_3薄膜,研究了薄膜的结构、光学和电学性质。X射线衍射测试结果表明,在我们的掺杂浓度内,Mg掺杂茁-Ga_2O_3薄膜没有出现其他晶相的衍射峰,随着Mg掺杂浓度变大,薄膜的(401)和(■)衍射峰强度变弱。使用X射线光电子能谱测试薄膜中各元素的结合能和化学态。紫外-可见透射光谱测试结果表明薄膜在测试波段平均透光率高达80%以上,薄膜的带隙宽度随着Mg掺杂浓度变大而变大。霍尔效应测试结果表明我们采用射频磁控溅射方法制备的Mg掺杂茁-Ga_2O_3薄膜的导电类型为p型,载流子浓度由3.76...
关键词 ：
Mg掺杂β-Ga_2O_3薄膜 Mg掺杂β-Ga_2O_3薄膜 p型掺杂 p型掺杂 射频磁控溅射 射频磁控溅射 带隙宽度 带隙宽度
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | 杨子淑 , 段苹 , 邓金祥 et al. 不同浓度的Mg掺杂β-Ga_2O_3薄膜的制备与研究 [J]. | 真空 , 2021 , 58 (03) : 30-34 . |
| MLA | 杨子淑 et al. "不同浓度的Mg掺杂β-Ga_2O_3薄膜的制备与研究" . | 真空 58 . 03 (2021) : 30-34 . |
| APA | 杨子淑 , 段苹 , 邓金祥 , 张晓霞 , 张杰 , 杨倩倩 . 不同浓度的Mg掺杂β-Ga_2O_3薄膜的制备与研究 . | 真空 , 2021 , 58 (03) , 30-34 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
The growth of trace amount of niobium (Nb) doped beta-Ga2O3 thin films have been demonstrated on (0001) sapphire substrates by radio frequency magnetron co-sputtering method. The crystallization, morphology and optical properties of Nb doped beta-Ga2O3 films have been investigated. The deep ultraviolet (DUV) photodetector with a metal-semiconductor-metal structure based on trace amount of Nb doped beta-Ga2O3 thin film was fabricated. The DUV photodetector exhibits high photo-to-dark-current ratio and fast photo-response speed, suggesting the performance of beta-Ga2O3 photodetector can be improved by doping trace amount of Nb in beta-Ga2O3 thin film.
关键词 ：
beta-Ga2O3 beta-Ga2O3 Deep ultraviolet photodetector Deep ultraviolet photodetector Nb-doped Nb-doped Photo-response Photo-response
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | Zhang, H. , Deng, J. X. , Zhang, Q. et al. Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response [J]. | OPTIK , 2021 , 243 . |
| MLA | Zhang, H. et al. "Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response" . | OPTIK 243 (2021) . |
| APA | Zhang, H. , Deng, J. X. , Zhang, Q. , Wang, X. L. , Meng, J. H. , Xu, Z. Y. et al. Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response . | OPTIK , 2021 , 243 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
稀土铽铕掺杂Ba_(3)Yb(PO_(4))_(3)发光材料的研究
关键词 ：
X射线衍射 X射线衍射 白光发光二极管 白光发光二极管 磷酸盐 磷酸盐 稀土发光 稀土发光
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | 李婷婷 , 王吉有 , 刘悦 et al. 稀土铽铕掺杂Ba_(3)Yb(PO_(4))_(3)发光材料的研究 [J]. | 李婷婷 , 2021 , 37 (1) : 36-41 . |
| MLA | 李婷婷 et al. "稀土铽铕掺杂Ba_(3)Yb(PO_(4))_(3)发光材料的研究" . | 李婷婷 37 . 1 (2021) : 36-41 . |
| APA | 李婷婷 , 王吉有 , 刘悦 , 邓金祥 , 沧州师范学院学报 . 稀土铽铕掺杂Ba_(3)Yb(PO_(4))_(3)发光材料的研究 . | 李婷婷 , 2021 , 37 (1) , 36-41 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Hall-effect in semiconductors has wide applications for magnetic field sensing. Yet, a standard Hall sensor retains two problems: its linearity is affected by the non-uniformity of the current distribution; the sensitivity is bias-dependent, with linearity decreasing with increasing bias current. In order to improve the performance, we here propose a novel structure which realizes bias-free, photo-induced Hall sensors. The system consists of a semi-transparent metal Pt and a semiconductor Si or GaAs to form a Schottky contact. We systematically compared the photo-induced Schottky behaviors and Hall effects without net current flowing, depending on various magnetic fields, light intensities and wavelengths of Pt/GaAs and Pt/Si junctions. The electrical characteristics of the Schottky photo-diodes were fitted to obtain the barrier height as a function of light intensity. We show that the open-circuit Hall voltage of Pt/GaAs junction is orders of magnitude lower than that of Pt/Si, and the barrier height of GaAs is smaller. It should be attributed to the surface states in GaAs which block the carrier drifting. This work not only realizes the physical investigations of photo-induced Hall effects in Pt/GaAs and Pt/Si Schottky junctions, but also opens a new pathway for bias-free magnetic sensing with high linearity and sensitivity comparing to commercial Hall-sensors.
关键词 ：
barrier height barrier height magnetic sensor magnetic sensor photo-induced Hall effect photo-induced Hall effect Schottky junction Schottky junction
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | Wang Xiaolei , Sun Xupeng , Cui Shuainan et al. Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions. [J]. | Sensors , 2021 , 21 (9) . |
| MLA | Wang Xiaolei et al. "Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions." . | Sensors 21 . 9 (2021) . |
| APA | Wang Xiaolei , Sun Xupeng , Cui Shuainan , Yang Qianqian , Zhai Tianrui , Zhao Jinliang et al. Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions. . | Sensors , 2021 , 21 (9) . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Topological Weyl semimetals have attracted considerable interest because they manifest underlying physics and device potential in spintronics. Large anomalous Hall effect (AHE) in non-collinear antiferromagnets (AFMs) represents a striking Weyl phase, which is associated with Bloch-band topological features. In this work, we report robust AHE and Lifshitz transition in high-quality Weyl semimetal Mn3Ge thin film, comprising stacked Kagome lattice and chiral antiferromagnetism. We successfully achieved giant AHE in our Mn3Ge film, with a strong Berry curvature enhanced by the Weyl phase. The enormous coercive field HC in our AHE curve at 5 K reached an unprecedented 5.3 T among hexagonal Mn3X systems. Our results provide direct experimental evidence of an electronic topological transition in the chiral AFMs. The temperature was demonstrated to play an efficient role in tuning the carrier concentration, which could be quantitatively determined by the two-band model. The electronic band structure crosses the Fermi energy level and leads to the reversal of carrier type around 50 K. The results not only offer new functionality for effectively modulating the Fermi level location in topological Weyl semimetals but also present a promising route of manipulating the carrier concentration in antiferromagnetic spintronic devices.
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | Wang Xiaolei , Pan Dong , Zeng Qingqi et al. Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge. [J]. | Nanoscale , 2021 , 13 (4) : 2601-2608 . |
| MLA | Wang Xiaolei et al. "Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge." . | Nanoscale 13 . 4 (2021) : 2601-2608 . |
| APA | Wang Xiaolei , Pan Dong , Zeng Qingqi , Chen Xue , Wang Hailong , Zhao Duo et al. Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge. . | Nanoscale , 2021 , 13 (4) , 2601-2608 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
Monoclinic β phase Ga2O3 has been considered as a promising candidate for next generation radio frequency and high-power devices because of its ultrawide bandgap and high breakdown field. The development of epitaxial growth techniques and the synthesis of high quality β-Ga2O3 thin films are crucial for the device applications. In this work, the heteroepitaxial β-Ga2O3 thin films were grown on sapphire (0001) substrates by low pressure chemical vapor deposition. The influence of growth parameters such as the source/substrate temperatures, the oxygen/Ar gas flow rates, and the surface morphology of substrate on the resultant crystallinity and surface roughness of the β-Ga2O3 films were investigated. The β-Ga2O3 heteroepitaxial layer on sapphire exhibits an RMS roughness of 1.82 nm, an XRD rocking curve of 1.18°, and a growth rate of 0.72 μm/h. The β-Ga2O3 film grown on the buffer layer exhibit a smoother surface, whereas the chemical etching and annealing lead to an improved crystallinity and a rough surface. However, there is a trade-off between the crystallization and the surface roughness. © 2021 Elsevier Ltd
关键词 ：
Buffer layers Buffer layers Crystallinity Crystallinity Epitaxial growth Epitaxial growth Flow of gases Flow of gases Gallium compounds Gallium compounds Growth rate Growth rate Low pressure chemical vapor deposition Low pressure chemical vapor deposition Morphology Morphology Sapphire Sapphire Substrates Substrates Surface morphology Surface morphology Surface roughness Surface roughness Thin films Thin films
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | Jiao, Yujia , Jiang, Qian , Meng, Junhua et al. Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition [J]. | Vacuum , 2021 , 189 . |
| MLA | Jiao, Yujia et al. "Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition" . | Vacuum 189 (2021) . |
| APA | Jiao, Yujia , Jiang, Qian , Meng, Junhua , Zhao, Jinliang , Yin, Zhigang , Gao, Hongli et al. Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition . | Vacuum , 2021 , 189 . |
| 导入链接 | NoteExpress RIS BibTex |
摘要 ：
This article presents a compact 3 dB waveguide directional coupler with full waveguide bandwidth. It consists of a pair of rectangular waveguides with stairs structures in the coupling region. The waveguides are placed parallel to each other along their broad wall, which has a rectangular aperture array. The compact size, broad bandwidth, good in-band coupling flatness, and good return loss are achieved by using the proposed structure. For verification purposes, a prototype of the proposed coupler was designed, manufactured, and measured. The experimental results show that over the full waveguide bandwidth a return loss of input port better than 17.46 dB, coupling strength varying between -2.74 dB and -3.80 dB, power-split unbalance within 0.76 dB, and an isolation better than 20.82 dB were obtained. The length of the coupling region was only 15.82 mm.
关键词 ：
3 dB 3 dB compact directional coupler compact directional coupler full bandwidth full bandwidth microwave coupler microwave coupler rectangular aperture rectangular aperture
引用：
复制并粘贴一种已设定好的引用格式，或利用其中一个链接导入到文献管理软件中。
| GB/T 7714 | Deng, Xida , Dong, Ge , Dai, Xuan et al. Compact Full Ka-Band Waveguide Directional Coupler Based on Rectangular Aperture Array with Stairs [J]. | MICROMACHINES , 2021 , 12 (7) . |
| MLA | Deng, Xida et al. "Compact Full Ka-Band Waveguide Directional Coupler Based on Rectangular Aperture Array with Stairs" . | MICROMACHINES 12 . 7 (2021) . |
| APA | Deng, Xida , Dong, Ge , Dai, Xuan , Deng, Jinxiang . Compact Full Ka-Band Waveguide Directional Coupler Based on Rectangular Aperture Array with Stairs . | MICROMACHINES , 2021 , 12 (7) . |
| 导入链接 | NoteExpress RIS BibTex |
导出
| 数据： |
选中 到 |
| 格式： |
